IP Library Granted Patent US 11,145,770
Granted Patent B2
US 11,145,770 · App. 16/772,051 · Granted Oct 12, 2021

Semiconductor light receiving element

Inventors: Ken Usui (Kyoto, JP); Takatomo Isomura (Kyoto, JP); Etsuji Omura (Kyoto, JP)
Assignee: Kyoto Semiconductor Co., Ltd.
H01L31/02327H01L31/105
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Quick Facts
Patent No.
US 11,145,770
App. No.
16/772,051
Granted
Oct 12, 2021
Kind
B2
Abstract

A semiconductor light receiving element comprises a light absorption region formed in the vicinity of the main surface of the semiconductor substrate transparent to the incident light; an incident region set to be concentric with and larger than the light absorption region; and a partially spherical concave reflecting portion formed on a back surface of the semiconductor substrate and capable of reflecting incident light incident on the incident region from the main surface side toward the light absorbing region; wherein, when the radius of curvature of the portion is R, the diameter of the incident region is B, the distance between the light absorbing region and the concave reflecting portion is W, and the diameter of the light absorbing region is P, then the radius of curvature R satisfies a condition of 2 BW/(B−P/2)≤R≤2BW/(B−P).

Claims (5)

1. A semiconductor light receiving element including a light absorbing region formed in a vicinity of a main surface of a semiconductor substrate transparent to an incident light, an incident region set concentrically with the light absorbing region and larger than the light absorbing region, and a partially spherical concave reflecting portion provided on a back surface opposite to the main surface of the semiconductor substrate and capable of reflecting incident light incident on the incident region from a side of the main surface of the semiconductor substrate toward the light absorbing region; wherein,

when a radius of curvature of the concave reflecting portion is R, a diameter of the incident region is B, a distance in the semiconductor substrate between the light absorbing region and the concave reflecting portion is W, and a diameter of the light absorbing region is P, then the radius of curvature R satisfies a condition of R≤2BW/(B−P) in order to avoid reduction of a coupling efficiency, and satisfies a condition of R≥2BW/(B−P/2) in order to avoid a space charge effect.

2. A semiconductor light receiving element including a light absorption region formed in a vicinity of a main surface of a semiconductor substrate transparent to an incident light, an incident region set concentrically with the light absorption region and larger than the light absorption region, and a revolving paraboloid shaped concave reflecting portion provided on a back surface opposite to the main surface of the semiconductor substrate and capable of reflecting incident light incident on the incident region from a side of the main surface of the semiconductor substrate toward the light absorbing region;

wherein,

when a radius of curvature of a partial spherical surface approximating a revolving paraboloid shape of the concave reflecting portion is R, a diameter of the incident region is B, a distance in the semiconductor substrate between the light absorbing region and the concave reflecting portion is W, and a diameter of the light absorbing region is P, then the radius of curvature R satisfies a condition of R≤2BW/(B−P) in order to avoid reduction of a coupling efficiency, and satisfies a condition of R≥2BW/(B−P/2) in order to avoid a space charge effect.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 17, 2024
From: DEXERIALS PHOTONICS SOLUTIONS CORPORATION
To: DEXERIALS CORPORATION
Reel/Frame 068013/0329 →
CHANGE OF NAME Recorded Jun 26, 2024
From: KYOTO SEMICONDUCTOR CO., LTD.
To: DEXERIALS PHOTONICS SOLUTIONS CORPORATION
Reel/Frame 067877/0479 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 11, 2020
From: USUI, KEN; ISOMURA, TAKATOMO; OMURA, ESTUJI
To: KYOTO SEMICONDUCTOR CO., LTD.
Reel/Frame 052912/0546 →
Continuity (1)
Related Publication 20200365745A1 · Nov 19, 2020