Reflection mode photomask
View Patent ↗A reflection mode photomask includes a substrate. The reflection mode photomask further includes a reflective multilayer over the substrate. The reflection mode photomask further includes a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm).
1. A reflection mode photomask, comprising:
a substrate;
a reflective multilayer over the substrate; and
a plurality of absorber stacks over the reflective multilayer, wherein each absorber stack of the plurality of absorber stacks has an etch stop layer, an absorber layer and an ARC layer, wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5, and a sidewall roughness of each absorber stack of the plurality of absorber stacks is smaller than 3 nanometers (nm), a material of the absorber stack is selected from the group consisting of tantalum oxynitride and tantalum silicon oxynitride, and a material of the ARC layer is selected from the group consisting of tantalum nitride and tantalum silicon wherein the absorber layer is between the etch stop layer and the ARC layer.
2. The reflection mode photomask of claim 1 , wherein the etch stop layer is discontinuous between adjacent absorber stacks of the plurality of absorber stacks.
3. The reflection mode photomask of claim 1 , wherein the absorber layer comprises tantalum oxynitride, and the ARC layer consists of tantalum nitride.
4. The reflection mode photomask of claim 1 , wherein the absorber layer comprises tantalum silicon oxynitride, and the ARC layer consists of tantalum silicon.
5. The reflection mode photomask of claim 1 , wherein a thickness of the etch stop layer is uniform.
6. The reflection mode photomask of claim 1 , further comprising a capping layer between the reflective multilayer and the plurality of absorber stacks.
7. The reflection mode photomask of claim 1 , wherein the etch stop layer comprises silicon or silicon compounds, and the etch stop layer has a thickness greater than 2 nanometers (nm) to about 5 nm.
8. A mask comprising:
a substrate;
a reflective multilayer over a substrate;
a capping layer over the reflective multilayer;
an etch stop layer extending over an entirety of a top surface of the capping layer, wherein the etch stop layer comprises silicon or silicon compounds, and the etch stop layer has a thickness greater than 2 nanometers (nm) to about 5 nm;
an absorber layer over the etch stop layer, wherein the absorber layer comprises tantalum oxynitride or tantalum silicon oxynitride; and
an anti-reflective coating (ARC) layer over the absorber layer, wherein the ARC layer is a single material film, the ARC layer direct contacts the absorber layer, and the ARC layer comprises tantalum nitride or tantalum silicon.
9. The mask of claim 8 , wherein the etch stop layer has a uniform thickness.
10. The mask of claim 8 , wherein the etch stop layer has a variable thickness.
11. The mask of claim 8 , wherein the etch stop layer consists of silicon.
12. The mask of claim 8 , wherein a ratio of a thickness of the ARC layer to that of the etch stop layer is in a range from about 1:1 to about 1:2.5.
13. The mask of claim 8 , wherein a sidewall roughness of the absorber layer is smaller than 3 nm.
14. The mask of claim 8 , wherein the etch stop layer is silicon.
15. A mask comprising:
a substrate;
a reflective multilayer over a substrate;
a capping layer directly on the reflective multilayer, wherein the capping layer is continuous across an entirety of the mask, and the mask is usable for patterning a semiconductor device;
an absorber layer directly on the capping layer, wherein a sidewall roughness of the absorber stack is smaller than 3 nanometers (nm); and
an anti-reflective coating (ARC) layer over the absorber layer, wherein the ARC layer is a single material film, wherein
the absorber layer comprises tantalum oxynitride and the ARC layer consists of tantalum nitride, or the absorber layer comprises tantalum silicon oxynitride and the ARC layer consists of tantalum silicon.
16. The mask of claim 15 , wherein the capping layer comprises ruthenium.
17. The mask of claim 15 , wherein the absorber layer is a patterned layer.
18. The mask of claim 15 , wherein the ARC layer has a thickness ranging from about 1 nanometer (nm) to about 5 nm.
19. The mask of claim 15 , wherein the ARC layer comprises has a thickness ranging from about 2 nm to about 3 nm.