IP Library Granted Patent US 12,024,424
Granted Patent B2
US 12,024,424 · App. 16/774,684 · Granted Jul 2, 2024

Method for electrochemical transformation of amorphous material to crystalline material

Inventors: Prashant Bagri (Hillsboro, OR); Sheng Dai (Knoxville, TN); Huimin Luo (Knoxville, TN)
Assignee: UT-Battelle, LLC
C01B21/064C01F5/32C01P2002/02C01P2002/74C01P2004/03C01P2004/04
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Quick Facts
Patent No.
US 12,024,424
App. No.
16/774,684
Granted
Jul 2, 2024
Kind
B2
Abstract

A method for converting amorphous boron nitride to crystalline boron nitride, the method comprising immersing the amorphous boron nitride into anhydrous molten magnesium chloride maintained within a temperature range of 720° C.-820° C. while the amorphous boron nitride is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a period of time of at least 2 minutes to result in conversion of the amorphous boron nitride to the crystalline form. Also described herein is a method for converting an amorphous carbon material to a crystalline carbon material, the method comprising immersing said amorphous carbon material into anhydrous molten magnesium chloride maintained within a temperature range of 780° C.-820° C. while the amorphous carbon material is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a period of time of at least 2 minutes to result in conversion of the amorphous carbon material to the crystalline form.

Claims (9)

1. A method for converting amorphous boron nitride to crystalline boron nitride, the method comprising immersing the amorphous boron nitride into anhydrous molten magnesium chloride maintained within a temperature range of 720° C.-820° C. while the amorphous boron nitride is cathodically polarized at a voltage within a range of −2.2V to −2.8V for a sufficient period of time to result in conversion of the amorphous boron nitride to the crystalline boron nitride.

2. The method of claim 1 , wherein the crystalline boron nitride is hexagonal boron nitride.

3. The method of claim 1 , wherein the anhydrous molten magnesium chloride is maintained within a temperature range of 750° C.-820° C.

4. The method of claim 1 , wherein the anhydrous molten magnesium chloride is maintained within a temperature range of 750° C.-800° C.

5. The method of claim 1 , wherein the amorphous boron nitride is cathodically polarized at said voltage for a period of time of at least 1 hour.

6. The method of claim 1 , wherein the amorphous boron nitride is cathodically polarized at said voltage for a period of time of at least 90 minutes.

7. The method of claim 1 , wherein the amorphous boron nitride is wrapped within and in contact with a metal mesh serving as cathodic working electrode.

8. The method of claim 7 , wherein said metal mesh is molybdenum.

9. The method of claim 1 , wherein said crystalline boron nitride exhibits an x-ray diffraction peak at 2θ of 26°.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 22, 2022
From: BAGRI, PRASHANT; DAI, SHENG; LUO, HUIMIN
To: UT-BATTELLE, LLC
Reel/Frame 061182/0982 →
CONFIRMATORY LICENSE Recorded Mar 19, 2020
From: UT-BATTELLE, LLC
To: U.S. DEPARTMENT OF ENERGY
Reel/Frame 052164/0105 →
Continuity (1)
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