Display device using semiconductor light emitting device surrounded by conductive electrode and method for manufacturing the same
The present disclosure relates to a display device and a fabrication method thereof, and more particularly, to a display device using a semiconductor light emitting device. The display device includes a semiconductor light emitting device disposed on a substrate, and having a first conductive electrode disposed on an upper edge of the semiconductor light emitting device, and a second conductive electrode disposed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode, a passivation layer disposed to cover a part of an upper surface of the semiconductor light emitting device, a first wiring electrode electrically connected to the first conductive electrode and a second wiring electrode electrically connected to the second conductive electrode.
1. A display device, comprising:
a semiconductor light emitting device disposed on a substrate, and having a first conductive electrode disposed on an upper edge of the semiconductor light emitting device, and a second conductive electrode disposed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode;
a passivation layer disposed to cover a part of an upper surface of the semiconductor light emitting device;
a first wiring electrode electrically connected to the first conductive electrode; and
a second wiring electrode electrically connected to the second conductive electrode,
wherein a part of the second wiring electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween, and
wherein the first conductive electrode is disposed at a position higher than that of the second conductive electrode in a thickness direction of the semiconductor light emitting device.
2. The display device of claim 1 , wherein the passivation layer is extended from a side surface of the semiconductor light emitting device in a width direction of the semiconductor light emitting device, and disposed to cover portions of the first and second conductive electrodes.
3. The display device of claim 2 , wherein the passivation layer is disposed to cover a remaining portion of the upper surface of the semiconductor light emitting device excluding remaining portions of the first and second conductive electrodes respectively connected to the first and second wiring electrodes.
4. The display device of claim 1 , wherein the semiconductor light emitting device is formed symmetrically with respect to a widthwise center line thereof.
5. The display device of claim 1 , wherein the second conductive electrode is disposed in a recessed portion of the semiconductor light emitting device.
6. The display device of claim 1 , wherein the semiconductor light emitting device further comprises:
a first conductive type semiconductor layer disposed below the first conductive electrode;
a second conductive type semiconductor layer disposed below the second conductive type electrode; and
an active layer disposed between the first and second conductive type semiconductor layers.
7. The display device of claim 6 , wherein a height of the first semiconductor layer is greater than a height of the second conductive electrode.
8. The display device of claim 6 , wherein a height of the second conductive electrode is greater than a height of the active layer.
9. The display device of claim 6 , wherein the active layer is disposed to overlap with the second conductive electrode disposed at the upper central portion of the semiconductor light emitting device.
10. The display device of claim 6 , wherein the active layer is formed in an annular shape to overlap with the first conductive electrode.
11. The display device of claim 1 , where the first wiring electrode and the second wiring electrode are disposed perpendicularly to each other.
12. The display device of claim 1 , wherein a shape of the semiconductor light emitting device is one of a triangle, a rectangle and a circle.
13. The display device of claim 1 , wherein a shape of the first conductive electrode is different from a shape of the second conductive electrode.
14. The display device of claim 1 , wherein a thickness of the passivation layer is different from thicknesses of the first and second wiring electrodes.
15. The display device of claim 1 , wherein the passivation layer is further formed to cover a side surface of the semiconductor light emitting device.
16. A display device, comprising:
a substrate;
a semiconductor light emitting device disposed on the substrate, and including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer disposed between the first and second conductive type semiconductor layers, a first conductive electrode electrically connected to the first conductive type semiconductor layer, and a second conductive electrode connected to the second conductive semiconductor layer;
a first wiring electrode electrically connected to the first conductive electrode; and
a second wiring electrode electrically connected to the second conductive electrode,
wherein the second conductive electrode is surrounded by the first conductive electrode, and
wherein the second conductive electrode is disposed at a position higher than that of the first conductive electrode in a thickness direction of the semiconductor light emitting device.
17. The display device of claim 16 , wherein the first conductive electrode is disposed on an edge of the semiconductor light emitting device, and the second conductive electrode is disposed on a central portion of the semiconductor light emitting device.
18. The display device of claim 16 , wherein the first conductive electrode is disposed at a position higher than that of the second conductive electrode in a thickness direction of the semiconductor light emitting device.
19. A display device, comprising:
a substrate;
a semiconductor light emitting device disposed on the substrate, and including a first conductive type semiconductor layer, a second conductive type semiconductor layer, an active layer disposed between the first and second conductive type semiconductor layers, a first conductive electrode electrically connected to the first conductive type semiconductor layer, and a second conductive electrode connected to the second conductive semiconductor layer;
a first wiring electrode electrically connected to the first conductive electrode;
a second wiring electrode electrically connected to the second conductive electrode; and
a passivation layer disposed to cover a part of an upper surface of the semiconductor light emitting device,
wherein the second conductive electrode is surrounded by the first conductive electrode, and
wherein a part of the second wiring electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween.