Semiconductor integrated circuit

1. A semiconductor integrated circuit, comprising:

a power switch element having a gate;

a gate resistor and a diode corrected in parallel, both connected to the gate of the power switch element;

a control circuit connected to the power switch element for controlling the power switch element;

an electrostatic discharge protection device connected between an input terminal to which an input voltage is applied, and the power switch element and the control circuit, for protecting the power switch element and the control circuit from being damaged by an electrostatic discharge; and

a short-to-supply fault protection circuit connected between the electrostatic discharge protection device, and the power switch element and the control circuit, for protecting the power switch element and the control circuit from being damaged by a high voltage generated due to a short-to-supply fault, wherein

the short-to-supply fault protection circuit includes

a first step-down circuit that is disposed between the input terminal and the control circuit, and which, upon detecting the high voltage, steps down the high voltage to a first voltage to use as a power supply voltage for the control circuit, and

a second step-down circuit that is disposed between the input terminal and the gate of the power switch element, the second step-down circuit being connected to the gate of the power switch element via the parallel-connected diode and gate resister, and upon detecting the high voltage, stepping down the high voltage to a second voltage to use as a gate voltage for the power switch element.

2. The semiconductor integrated circuit according to claim 1 , wherein the first step-down circuit and the second step-down circuit each include a plurality of step-down circuits that sequentially step down the high voltage.

3. The semiconductor integrated circuit according to claim 2 , wherein one of the step-down circuits located closest to the input terminal includes a first resistor, a second resistor, and a first Zener diode, which are connected in series.

4. The semiconductor integrated circuit according to claim 3 , wherein

the plurality of step-down circuits correspond to a plurality of step-down stages, and

another one of the step-down circuits that is located at a last stage of the plurality of step-down stages includes a third resistor and a second Zener diode connected in series, and clamps a voltage applied by a second last stage of the plurality of step-down stages to a breakdown voltage of the second Zener diode.

5. The semiconductor integrated circuit according to claim 2 , wherein

the first step-down circuit and the second step-down circuit are connected in parallel.

6. The semiconductor integrated circuit according to claim 1 , further comprising a pull-down resistor connected in parallel with the electrostatic discharge protection device.

7. The semiconductor integrated circuit according to claim 1 , wherein the semiconductor integrated circuit is an igniter in which the power switch element energizes and de-energizes an ignition coil.

8. The semiconductor integrated circuit according to claim 1 , wherein

the first step-down circuit and the second step-down circuit are connected in parallel.

9. A semiconductor integrated circuit, comprising:

a power switch element;

a control circuit connected to the power switch element for controlling the power switch element;

an electrostatic discharge protection device connected between an input terminal to which an input voltage is applied, and the power switch element and the control circuit, for protecting the power switch element and the control circuit from being damaged by an electrostatic discharge; and

a short-to-supply fault protection circuit connected between the electrostatic discharge protection device, and the power switch element and the control circuit, for protecting the power switch element and the control circuit from being damaged by a high voltage generated due to a short-to-supply fault, wherein

the short-to-supply fault protection circuit includes

a first step-down circuit that is disposed between the input terminal and the control circuit, and which, upon detecting the high voltage, steps down the high voltage to a first voltage to use as a power supply voltage for the control circuit, and

a second step-down circuit that is disposed between the input terminal and a gate of the power switch element, and which, upon detecting the high voltage, steps down the high voltage to a second voltage to use as a gate voltage for the power switch element, wherein

the first step-down circuit includes a first plurality of step-down circuits that sequentially step down the high voltage,

one of the step-down circuits located closest to the input terminal includes a first resistor, a second resistor, and a first Zener diode, which are connected in series, and

another one of the step-down circuits that is located at a last stage of the first plurality of step-down stages includes a third resistor and a second Zener diode connected in series, and clamps a voltage applied by a second last stage of the first plurality of step-down stages to a breakdown voltage of the second Zener diode, and

wherein

the second step-down circuit includes a second plurality of step-down circuits that sequentially step down the high voltage,

one of the step-down circuits located closest to the input terminal includes a fourth resistor, a fifth resistor, and a third Zener diode, which are connected in series, and

another one of the step-down circuits that is located at a last stage of the second plurality of step-down stages includes a sixth resistor and a fourth Zener diode connected in series, and clamps a voltage applied by a second last stage of the second plurality of step-down stages to a breakdown voltage of the fourth Zener diode.

10. The semiconductor integrated circuit according to claim 9 , wherein

the first step-down circuit and the second step-down circuit are connected in parallel.