Semiconductor device
A semiconductor device includes a substrate having a first region and a second region, first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction, third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction, a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction, and a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.
1. A semiconductor device, comprising:
a substrate having a first region and a second region;
first and second nanowires disposed sequentially on the substrate in the first region, and extending respectively in a first direction;
third and fourth nanowires disposed sequentially on the substrate in the second region, and extending respectively in the first direction;
a first inner spacer between the first nanowire and the second nanowire, and including hydrogen of a first hydrogen mole fraction; and
a second inner spacer between the third nanowire and the fourth nanowire, and including hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.
2. The semiconductor device of claim 1 , wherein:
the first inner spacer includes oxygen of a first oxygen mole fraction, and
the second inner spacer includes oxygen of a second oxygen mole fraction that is greater than the first oxygen mole fraction.
3. The semiconductor device of claim 1 , wherein:
the first inner spacer and the second inner spacer are disposed at a same level, and
a first thickness in the first direction of the first inner spacer is greater than a second thickness in the first direction of the second inner spacer.
4. The semiconductor device of claim 3 , wherein:
the first thickness of the first inner spacer is 3 nm to 5 nm, and
the second thickness of the second inner spacer is 2 nm to 4 nm.
5. The semiconductor device of claim 1 , wherein the first inner spacer and the second inner spacer include different materials from each other.
6. The semiconductor device of claim 5 , wherein the first inner spacer includes SiN and the second inner spacer includes SiON.
7. The semiconductor device of claim 1 , further comprising:
a third inner spacer on the first inner spacer between the first nanowire and the second nanowire, and
a fourth inner spacer on the second inner spacer between the third nanowire and the fourth nanowire.
8. The semiconductor device of claim 7 , wherein the first and second inner spacers include different materials from those of the third and fourth inner spacers.
9. The semiconductor device of claim 8 , wherein:
each of the first and second inner spacers includes SiON, and
each of the third and fourth inner spacers includes SiN.
10. The semiconductor device of claim 1 , further comprising:
a first gate electrode surrounding the first and second nanowires and extending in a second direction different from the first direction, and
a second gate electrode surrounding the third and fourth nanowires and extending in the second direction.
11. The semiconductor device of claim 1 , wherein a threshold voltage of the first region is different from a threshold voltage of the second region.
12. A semiconductor device, comprising:
a substrate having a first region and a second region;
first and second nanowires disposed sequentially on the substrate in the first region and extending respectively in a first direction;
third and fourth nanowires disposed sequentially on the substrate in the second region and extending respectively in the first direction;
a first gate electrode surrounding the first and second nanowires and extending in a second direction different from the first direction;
a second gate electrode surrounding the third and fourth nanowires and extending in the second direction;
a first inner spacer on at least one side of the first gate electrode between the first nanowire and the second nanowire, and including oxygen of a first oxygen mole fraction; and
a second inner spacer on at least one side of the second gate electrode between the third nanowire and the fourth nanowire, and including oxygen of a second oxygen mole fraction that is greater than the first oxygen mole fraction.
13. The semiconductor device of claim 12 , wherein:
the first inner spacer includes hydrogen of a first hydrogen mole fraction, and
the second inner spacer includes hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction.
14. The semiconductor device of claim 12 , wherein:
the first inner spacer and the second inner spacer are disposed at a same level, and
a first thickness in the first direction of the first inner spacer is greater than a second thickness in the first direction of the second inner spacer.
15. The semiconductor device of claim 12 , wherein the first inner spacer and the second inner spacer include a same material.
16. The semiconductor device of claim 12 , further comprising:
a third inner spacer on the first inner spacer between the first nanowire and the second nanowire, and
a fourth inner spacer on the second inner spacer between the third nanowire and the fourth nanowire.
17. A semiconductor device, comprising:
a substrate having a first region and a second region;
first to third nanowires disposed sequentially on the substrate in the first region and extending respectively in a first direction;
fourth to sixth nanowires disposed sequentially on the substrate in the second region and extending respectively in the first direction;
a first gate electrode surrounding the first to third nanowires and extending in a second direction different from the first direction;
a second gate electrode surrounding the fourth to sixth nanowires and extending in the second direction;
a first source/drain region on at least one side of the first to third nanowires;
a second source/drain region on at least one side of the fourth to sixth nanowires;
a first inner spacer on at least one side of the first gate electrode between the first nanowire and the second nanowire, and including oxygen of a first oxygen mole fraction and hydrogen of a first hydrogen mole fraction;
a second inner spacer on at least one side of the second gate electrode between the fourth nanowire and the fifth nanowire, and including oxygen of a second oxygen mole fraction that is greater than the first oxygen mole fraction, and hydrogen of a second hydrogen mole fraction that is greater than the first hydrogen mole fraction;
a first source/drain contact connected with the first source/drain region; and
a second source/drain contact connected with the second source/drain region.
18. The semiconductor device of claim 17 , further comprising:
a third inner spacer on the first inner spacer between the first nanowire and the second nanowire, and
a fourth inner spacer on the second inner spacer between the fourth nanowire and the fifth nanowire.
19. The semiconductor device of claim 17 , wherein the first inner spacer includes SiN, and the second inner spacer includes SiON.
20. The semiconductor device of claim 17 , wherein each of the first inner spacer and the second inner spacer includes SiON.