Methods for forming flow channels in metal inverse opal structures
A method for forming a flow channel in a MIO structure includes positioning a plurality of sacrificial spheres along a base substrate, heating a region of the plurality of sacrificial spheres above a melting point of the plurality of sacrificial spheres, thereby fusing the plurality of sacrificial spheres together and forming a solid channel, electrodepositing material between the plurality of sacrificial spheres and around the solid channel, removing the plurality of sacrificial spheres to form the MIO structure, and removing the solid channel to form the flow channel extending through the MIO structure.
1. A method for forming a flow channel in a MIO structure, the method comprising:
positioning a plurality of sacrificial spheres along a base substrate;
heating a region of the plurality of sacrificial spheres above a melting point of the plurality of sacrificial spheres, thereby fusing the plurality of sacrificial spheres together and forming a solid channel, wherein heating the region of the plurality of sacrificial spheres comprises directing electromagnetic energy onto the region of the plurality of sacrificial spheres with an electromagnetic energy source;
electrodepositing material between the plurality of sacrificial spheres and around the solid channel;
removing the plurality of sacrificial spheres to form the MIO structure; and
removing the solid channel to form the flow channel extending through the MIO structure.
2. The method of claim 1 , wherein removing the plurality of sacrificial spheres comprises dissolving the plurality of sacrificial spheres with a solution.
3. The method of claim 1 , wherein removing the solid channel comprises dissolving the solid channel with a solution.
4. The method of claim 1 , wherein electrodepositing the material comprises electrodepositing copper or nickel between the plurality of sacrificial spheres and around the solid channel.
5. The method of claim 1 , further comprising positioning a capping layer over the MIO structure.
6. The method of claim 1 , further comprising positioning a dielectric layer over the MIO structure.
7. The method of claim 1 , further comprising positioning a mask over the plurality of sacrificial spheres, wherein the mask defines an opening positioned over the region of the plurality of sacrificial spheres, and wherein the mask blocks at least a portion of the electromagnetic energy from the electromagnetic energy source.
8. The method of claim 1 , wherein the electromagnetic energy source comprises a laser.
9. The method of claim 1 , wherein the flow channel extending through the MIO structure defines a channel span between 1 micrometer and 100 micrometers.
10. A method for forming a flow channel in a MIO structure, the method comprising:
positioning a plurality of sacrificial spheres along a base substrate;
positioning a solid channel between spheres of the plurality of sacrificial spheres, at least some of the plurality of sacrificial spheres positioned between the solid channel and the base substrate;
electrodepositing a material between the plurality of sacrificial spheres and around the solid channel;
removing the plurality of sacrificial spheres to form the MIO structure; and
removing the solid channel to form the flow channel extending through the MIO structure, wherein at least a portion of the MIO structure is positioned between the flow channel and the base substrate.
11. The method of claim 10 , wherein the solid channel comprises a cylinder extending through the plurality of sacrificial spheres.
12. The method of claim 10 , wherein the solid channel comprises a rectangular prism extending through the plurality of sacrificial spheres.
13. The method of claim 10 , wherein the flow channel extending through the MIO structure defines a channel span between 1 micrometer and 100 micrometers.
14. The method of claim 10 , wherein the plurality of sacrificial spheres comprises a plurality of polymer spheres.
15. The method of claim 10 , wherein removing the plurality of sacrificial spheres comprises dissolving the plurality of sacrificial spheres with a solution.
16. The method of claim 10 , wherein removing the solid channel comprises dissolving the solid channel with a solution.
17. The method of claim 10 , wherein electrodepositing the material comprises electrodepositing copper or nickel between the plurality of sacrificial spheres and around the solid channel.
18. The method of claim 10 , further comprising positioning a capping layer over the MIO structure.
19. The method of claim 10 , further comprising positioning a dielectric layer over the MIO structure.