Light emitting diode and manufacturing method thereof

1. A light emitting diode, comprising:

an active layer;

a first type semiconductor layer and a second type semiconductor layer disposed at opposite sides of the active layer;

a first contact electrically connected to the first type semiconductor layer;

a second contact electrically connected to the second type semiconductor layer;

a coupling layer disposed on the second type semiconductor layer, wherein the coupling layer is in direct contact with the second type semiconductor layer;

a sacrificial thin film disposed on the coupling layer, wherein the coupling layer is disposed between the sacrificial thin film and the second type semiconductor layer, and the sacrificial thin film has a thickness less than a total thickness of the first type semiconductor layer, the active layer, the second type semiconductor layer and the coupling layer; and

an insulating layer being spaced apart from the second contact and covering sidewalls of the active layer, the first type semiconductor layer, and the second type semiconductor layer, wherein at least one sidewall of the sacrificial thin film is free from coverage by the insulating layer, and the at least one sidewall of the sacrificial thin film extends from a lower surface of the sacrificial thin film to an upper surface of the sacrificial thin film.

2. The light emitting diode of claim 1 , wherein the second type semiconductor layer comprises a roughened top surface, and the roughened top surface is in direct contact with the coupling layer.

3. The light emitting diode of claim 1 , wherein the sacrificial thin film has a thickness less than 3 μm.

4. The light emitting diode of claim 1 , wherein the sacrificial thin film comprises gallium nitride (GaN), aluminum gallium nitride (AlGaN), indium gallium nitride (InGaN), aluminum indium gallium nitride (AlInGaN), or aluminum nitride (AlN).

5. The light emitting diode of claim 1 , wherein each of the first type semiconductor layer and the second type semiconductor layer comprises a group III-V semiconductor.

6. The light emitting diode of claim 1 , wherein the active layer emits a light and the light penetrates through the sacrificial thin film to the outside of the light emitting diode.

7. The light emitting diode of claim 1 , further comprising a substrate and a connector on the substrate, wherein the first contact and the second contact connect the substrate by the connector.

8. The light emitting diode of claim 1 , wherein the second type semiconductor layer is p-type and the first type semiconductor layer is n-type.

9. The light emitting diode of claim 1 , wherein the first contact has a first surface away the sacrificial thin film and the first type semiconductor layer has a second surface away the sacrificial thin film, and wherein the second surface is closer to the sacrificial thin film than the first surface.

10. The light emitting diode of claim 1 , wherein the second contact is devoid of overlapping the active layer in a vertical direction.

11. The light emitting diode of claim 1 , wherein the second type semiconductor layer comprises a first sidewall and a second sidewall, the first sidewall is closer to the second contact than the second sidewall in a horizontal direction, the insulating layer covers the first sidewall without covering the second sidewall.

12. The light emitting diode of claim 1 , wherein the coupling layer comprises a third sidewall not covered by the insulating layer.

13. The light emitting diode of claim 12 , wherein the second type semiconductor layer comprises a first sidewall and a second sidewall, the first sidewall is closer to the second contact than the second sidewall in a horizontal direction, the insulating layer covers the first sidewall without covering the second sidewall.

14. The light emitting diode of claim 1 , wherein the first contact has a first surface away from the sacrificial thin film and the first surface is devoid of being covered by the insulating layer.