Method and apparatus for performing an erase operation comprising a sequence of micro-pulses in a memory device
Embodiments of the present disclosure are directed towards techniques and configurations for a memory apparatus configured with an erase command comprising a sequence of segments. In one embodiment, the memory apparatus is configured to generate an erase command in response to a request provided by a host to erase at least a portion of data stored in a memory device. The erase command comprises a sequence of erase segments that provide an erase voltage for erasing the portion of data stored in the memory apparatus. The memory apparatus is configured to grant access to the memory apparatus for servicing the memory access requests initiated by the host, during a time period between at least two adjacent erase segments in the sequence. Other embodiments may be described and/or claimed.
1. A memory device, comprising:
a host interface, to receive an erase command from a memory controller coupled with the memory device, to erase at least a portion of data stored in the memory device, wherein the erase command is a single command that comprises a corresponding sequence of erase segments that each provide an erase voltage of a same value to the memory device, wherein the sequence includes at least a first erase segment, a second erase segment adjacent to the first erase segment, and a third erase segment adjacent to the second erase segment, with a first time period between the first and second erase segments, and a second time period between the second and third erase segments, wherein the memory controller is to generate the erase command in response to a request to erase the at least a portion of data provided by a host coupled with the memory controller, wherein the host is to initiate memory access requests to be executed by the memory device; and
a control circuit coupled with the host interface, to control an execution of the erase command in a memory cell array of the memory device, to erase the portion of data;
wherein the memory device is to:
receive, during a duration of the first erase segment, a memory access request; and
in response to the receipt of the memory access request during the duration of the first erase segment,
suspend an erase operation associated with the erase command, and grant access to the memory device at a first time corresponding to a completion of the first erase segment, for the first time period; and
suspend the erase operation associated with the erase command, and grant access to the memory device at a second time corresponding to a completion of the second erase segment, for the second time period,
wherein to erase the portion of the data that is erasable by a conventional erase pulse, the erase command comprises a sequence of eight erase segments, wherein an erase time to erase the portion of the data by the sequence of eight erase segments comprises about half of a time to erase the portion of the data by the conventional erase pulse.
2. The memory device of claim 1 , wherein the erase segments in the sequence comprise micro-pulses with the erase voltage.
3. The memory device of claim 2 , wherein the erase voltage is about 20 V, and wherein a duration of a micro-pulse in the sequence is about 807 microseconds.
4. The memory device of claim 1 , wherein the memory device comprises a flash memory.
5. The memory device of claim 4 , wherein the memory device is a 3D NAND memory device.
6. The memory device of claim 4 , wherein the memory controller is integrated with a host processor in a system on chip (SoC).
7. A computing device, comprising:
a host, to initiate memory access requests;
a memory device, to store data; and
a memory controller coupled with the host and the memory device, wherein the memory controller is to generate an erase command in response a request, provided by the host, to erase at least a portion of the data stored in the memory device, wherein the erase command comprises a sequence of erase segments that provide an erase voltage to the memory device, wherein the erase command is a single command that comprises a corresponding sequence of erase segments that each provide an erase voltage of a same value to the memory device, wherein the sequence includes at least a first erase segment, a second erase segment adjacent to the first erase segment, and a third erase segment adjacent to the second erase segment, with a first time period between the first and second erase segments, and a second time period between the second and third erase segments,
wherein the memory controller is to:
receive, during a duration of the first erase segment, a memory access request; and
in response to the receipt of the memory access request during the duration of the first erase segment,
suspend an erase operation associated with the erase command, and grant access to the memory device at a first time corresponding to a completion of the first erase segment, for the first time period; and
suspend the erase operation associated with the erase command, and grant access to the memory device at a second time corresponding to a completion of the second erase segment, for the second time period,
wherein to erase the portion of the data that is erasable by a conventional erase pulse, the erase command comprises a sequence of eight erase segments, wherein an erase time to erase the portion of the data by the sequence of eight erase segments comprises about half of a time to erase the portion of the data by the conventional erase pulse.
8. The computing device of claim 7 , wherein the memory controller is to provide the erase command to the memory device for execution, to erase the requested portion of data.
9. The computing device of claim 7 , wherein the memory device comprises a flash memory.