Silicon etching solution and method for producing silicon device using the etching solution
A silicon etching solution includes a mixed solution comprising a quaternary alkylammonium hydroxide and water and further comprises a compound represented by the following formula (1): R 1 O—(C m H 2m O) n —R 2 (1) wherein R 1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R 2 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2.
1. A silicon etching solution that is a mixed solution consisting essentially of a quaternary alkylammonium hydroxide, water and a compound represented by the following formula (1):
R 1 O—(C m H 2m O) n —R 2 (1)
wherein R 1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R 2 is an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2,
wherein a concentration of the quaternary alkylammonium hydroxide is 0.05 to 10 mass %, and a concentration of the compound represented by the formula (1) is 0.1 to 3 mass %.
2. The silicon etching solution according to claim 1 , wherein the quaternary alkylammonium hydroxide is tetramethyl ammonium hydroxide.
3. The silicon etching solution according to claim 1 , wherein the compound represented by formula (1) is ethylene glycol monopropyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, or dipropylene glycol dimethyl ether.
4. An etching method, comprising:
providing the silicon etching solution according to claim 1 ; and
etching a silicon wafer, a polysilicon film or an amorphous silicon film with said silicon etching solution irrespective of a dissolved oxygen concentration in said silicon etching solution.
5. An etching method, comprising:
providing the silicon etching solution according to claim 1 ; and
etching a silicon wafer, a polysilicon film or an amorphous silicon film with said silicon etching solution to thereby lowering an etching rate ratio which is a ratio (R N /R A ) of an etching rate (R N ) in which a silicon etching solution is degassed of dissolved oxygen to an etching rate (N A ) in which a silicon etching solution is saturated with dissolved oxygen.
6. A method for producing a silicon device, comprising:
providing the silicon etching solution according to claim 1 ; and
etching a silicon wafer, a polysilicon film or an amorphous silicon film with said silicon etching solution.
7. A silicon etching solution that is a mixed solution comprising a quaternary alkylammonium hydroxide, water and a compound represented by the following formula (1):
R 1 O—(C m H 2m O) n —R 2 (1)
wherein R 1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R 2 is an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2,
wherein a concentration of the quaternary alkylammonium hydroxide is 0.05 to 10 mass %, and a concentration of the compound represented by the formula (1) is 0.1 to 3 mass %, and
wherein the etching solution does not contain a surfactant.
8. A silicon etching solution that is a mixed solution consisting of a quaternary alkylammonium hydroxide, water and a compound represented by the following formula (1):
R 1 O—(C m H 2m O) n —R 2 (1)
wherein R 1 is a hydrogen atom or an alkyl group having 1 to 3 carbon atoms, R 2 is an alkyl group having 1 to 6 carbon atoms, m is an integer of 2 to 6, and n is 1 or 2,
wherein a concentration of the quaternary alkylammonium hydroxide is 0.05 to 10 mass %, and a concentration of the compound represented by the formula (1) is 0.1 to 3 mass %.