SiC EPITAXIAL WAFER, AND METHOD OF MANUFACTURING THE SAME
A SiC epitaxial wafer includes a SiC epitaxial layer formed on a SiC single crystal substrate, in which a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm 2 or less.
1 . A SiC epitaxial wafer comprising a SiC epitaxial layer formed on a SiC single crystal substrate,
wherein a total density of large-pit defects caused by micropipes in the substrate and large-pit defects caused by substrate carbon inclusions, both of which are contained in the SiC epitaxial layer, is 1 defect/cm 2 or less.
2 . A SiC epitaxial wafer according to claim 1 ,
wherein a density of the large-pit defects caused by micropipes in the substrate is 0.5 defect/cm 2 or less.
3 . A method of manufacturing a SiC epitaxial wafer in which a SiC epitaxial layer is formed on a single crystal substrate, the method comprising:
a step of selecting a SiC single crystal substrate in which a total density of micropipes and substrate carbon inclusions in the SiC single crystal substrate is 1 defect/cm 2 or less.