IP Library Granted Patent US 11,017,982
Granted Patent B2
US 11,017,982 · App. 16/785,362 · Granted May 25, 2021

Composite charged particle beam apparatus and control method thereof

Inventors: Yasuhiko Sugiyama (Tokyo, JP); Naoko Hirose (Tokyo, JP); Hiroshi Oba (Tokyo, JP)
Assignee: HITACHI HIGH-TECH SCIENCE CORPORATION
H01J37/248H01J37/08H01J37/28H01J2237/31749
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,017,982
App. No.
16/785,362
Granted
May 25, 2021
Kind
B2
Abstract

Disclosed is a composite charged particle beam apparatus including: an ion supply unit supplying an ion beam; an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam; a first focusing unit focusing the ion beam; a beam booster voltage application unit applying a beam booster voltage to the ion beam; a second focusing unit focusing the ion beam to irradiate a sample; an electron beam emission unit emitting an electron beam to irradiate the sample; and a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and of a set value predetermined according to a focal distance of the focused ion beam.

Claims (20)

1. A composite charged particle beam apparatus comprising:

an ion supply unit supplying an ion beam;

an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam;

a first focusing unit focusing the ion beam accelerated by the acceleration voltage application unit;

a beam booster voltage application unit applying a beam booster voltage to the ion beam focused by the first focusing unit;

a second focusing unit focusing the ion beam to which the beam booster voltage is applied by the beam booster voltage application unit to irradiate a sample;

an electron beam emission unit emitting an electron beam to irradiate the sample; and

a controller setting a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and a set value predetermined according to a focal distance of the focused ion beam.

2. The composite charged particle beam apparatus of claim 1 , wherein an irradiation point and a focal point of the focused ion beam and an irradiation point of the electron beam are the same point on the sample.

3. The composite charged particle beam apparatus of claim 1 , wherein the controller sets, based on a set read from a storage that stores the set of the value of the acceleration voltage and the set value, the value of the beam booster voltage as the set value.

4. The composite charged particle beam apparatus of claim 2 , wherein the controller sets, based on a set read from a storage that stores the set of the value of the acceleration voltage and the set value, the value of the beam booster voltage as the set value.

5. A control method of a composite charged particle beam apparatus including:

an ion supply unit supplying an ion beam;

an acceleration voltage application unit applying an acceleration voltage to the ion beam supplied by the ion supply unit to accelerate the ion beam;

a first focusing unit focusing the ion beam accelerated by the acceleration voltage application unit;

a beam booster voltage application unit applying a beam booster voltage to the ion beam focused by the first focusing unit;

a second focusing unit focusing the ion beam to which the beam booster voltage is applied by the beam booster voltage application unit to irradiate a sample; and

an electron beam emission unit emitting an electron beam to irradiate the sample,

the method comprising:

a control process setting, a value of the beam booster voltage that the beam booster voltage application unit applies to the ion beam, based on a value of the acceleration voltage applied to the ion beam by the acceleration voltage application unit and a set value predetermined according to a focal distance of the focused ion beam.

Assignments (3)
CHANGE OF ADDRESS Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 072903/0593 →
CHANGE OF NAME Recorded Sep 17, 2025
From: HITACHI HIGH-TECH SCIENCE CORPORATION
To: HITACHI HIGH-TECH ANALYSIS CORPORATION
Reel/Frame 072913/0104 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 26, 2021
From: SUGIYAMA, YASUHIKO; HIROSE, NAOKO; OBA, HIROSHI
To: HITACHI HIGH-TECH SCIENCE CORPORATION
Reel/Frame 056040/0815 →
Priority Claims (1)
JP JP2019-025928 · Feb 15, 2019 · national
Continuity (1)
Related Publication 20200266029A1 · Aug 20, 2020