Method of manufacturing emitter, emitter, and focused ion beam apparatus
A method of manufacturing an emitter is disclosed. The method enables a crystal structure of the tip of the front end of the emitter to return to its original state with high reproducibility by rearranging atoms in a treatment, and enables a long lasting emitter to be attained by suppressing extraction voltage rise after the treatment. As a method of manufacturing an emitter having a sharpened needle-shape, the method includes: performing an electropolishing process for the front end of an emitter material having conductivity to taper toward the front end; and performing an etching to make the number of atoms constituting the tip of the front end be a predetermined number or less by further sharpening the front end through an electric field-induced gas etching having constantly applied voltage, while observing the crystal structure of the front end, by a field ion microscope, in a sharp portion having the front end at its apex.
1. A method of manufacturing an emitter that has a sharpened needle-shape, the method comprising:
an electropolishing process electrolytically polishing a front end portion of a conductive emitter material to taper towards the front end; and
an etching process further sharpening the front end by an electric field-induced gas etching processing in a state maintaining an applied voltage constant while observing, through a field ion microscope, a crystal structure of the front end at a sharp portion with the front end portion as an apex to make a number of atoms constituting a tip of the front end fewer than or equal to a predetermined number.
2. The method of manufacturing an emitter of claim 1 , further comprising:
a first etching process performing etching processing, between the electropolishing process and the etching process, by irradiating the processed part of the emitter material with a focused ion beam to form a sharp portion with a front end as the apex.
3. The method of manufacturing an emitter of claim 1 , wherein tungsten is used as the emitter material.
4. The method of manufacturing an emitter of claim 1 , wherein tungsten is used as the emitter material.
5. The method of manufacturing an emitter of claim 1 , wherein iridium is used as the emitter material.
6. The method of manufacturing an emitter of claim 2 , wherein iridium is used as the emitter material.