Composite electrode material chemistry
Methods, systems, and devices for composite electrode material chemistry are described. A memory device may include an access line, a storage element comprising chalcogenide, and an electrode coupled with the memory element and the access line. The electrode may be made of a composition of a first material doped with a second material. The second material may include a tantalum-carbon compound. In some cases, the second may be operable to be chemically inert with the storage element. The second material may include a thermally stable electrical resistivity and a lower resistance to signals communicated between the access line and the storage element across a range of operating temperatures of the storage element as compared with a resistance of the first material.
1. A method, comprising:
sputtering a composition of a tantalum-carbon compound with a first sputtering target; and
forming an electrode comprising a composition of a first material doped with a second material that comprises the composition of the tantalum-carbon compound, wherein the composition of the first material doped with the second material at a first end of the electrode is different than the composition of the first material doped with the second material at a second end of the electrode, the second end of the electrode coupled with a storage element comprising chalcogenide, the second end of the electrode being chemically inert with the storage element, the second end of the electrode associated with a thermal stable electrical resistivity for signals communicated between an access line and the storage element via the electrode.
2. The method of claim 1 , wherein sputtering the composition of the tantalum-carbon compound further comprises:
depositing, on a substrate, carbon; and
depositing, on the substrate, tantalum at a same time as depositing the carbon.
3. The method of claim 1 , further comprising:
sputtering carbon with a second sputtering target different than the first sputtering target, wherein the first material of the composition of the electrode comprises the carbon.
4. The method of claim 3 , wherein sputtering the composition of the tantalum-carbon compound comprises a first power density at which to deposit the composition with the first sputtering target and wherein sputtering the carbon comprises a second power density different than the first power density at which to deposit the carbon with the second sputtering target.
5. The method of claim 3 , further comprising:
applying a physical vapor deposition (PVD) process to a substrate provided to control a bond formation between the carbon and the composition of the tantalum-carbon compound.
6. The method of claim 5 , wherein the first sputtering target is powered by a DC power source.
7. The method of claim 5 , wherein the first sputtering target is powered by a pulsed DC power source, wherein the pulsed DC power source is configured to adjust a frequency at which to deposit the composition of the tantalum-carbon compound.