METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
A method of manufacturing a semiconductor device may include: exposing a surface of a gallium oxide substrate to an acidic or alkaline chemical solution so as to increase a surface roughness of the surface; and forming an electrode on the surface having the increased surface roughness.
1 . A method of manufacturing a semiconductor device, comprising:
increasing a surface roughness of a surface of a gallium oxide substrate by exposing the surface to an acidic or alkaline chemical solution; and
forming an electrode on the surface having the increased surface roughness.
2 . The method of claim 1 , wherein the chemical solution comprises at least one of phosphoric acid, nitric acid, hydrochloric acid, sulfuric acid, acetic acid, hydrogen peroxide, sodium hydroxide, potassium hydroxide, and tetramethylammonium hydroxide.
3 . The method of claim 1 , wherein the electrode comprises titanium.