Magnetic domain wall movement element and magnetic recording array

1. A magnetic domain wall movement element comprising:

a first ferromagnetic layer;

a magnetic recording layer located in a first direction with respect to the first ferromagnetic layer and extending in a second direction;

a nonmagnetic layer located between the first ferromagnetic layer and the magnetic recording layer; and

a first electrode and a second electrode which are located on a side of the magnetic recording layer opposite to the nonmagnetic layer, and each of the first electrode and the second electrode being configured to overlap with a part of the magnetic recording layer in the first direction,

wherein the first electrode includes a magnetic material whose magnetization is oriented in a direction different from a direction of magnetization of the first ferromagnetic layer,

the magnetic recording layer includes: a first region which overlaps with the first electrode and the first ferromagnetic layer in the first direction; a second region which overlaps with the second electrode and the first ferromagnetic layer in the first direction; and a third region which is located between the first region and the second region,

an area of a first section in the first region facing the first electrode is larger than an area of a second section in the second region facing the second electrode, and

the first ferromagnetic layer overlaps with a part of the first electrode and a part of the second electrode in the first direction.

2. The magnetic domain wall movement element according to claim 1 , wherein the second electrode includes a magnetic material whose magnetization is oriented in the same direction as the direction of magnetization of the first ferromagnetic layer.

3. The magnetic domain wall movement element according to claim 1 , further comprising a substrate,

wherein the first ferromagnetic layer is located closer to the substrate than the magnetic recording layer.

4. The magnetic domain wall movement element according to claim 3 , further comprising an insulating layer configured to cover the third region of the magnetic recording layer.

5. The magnetic domain wall movement element according to claim 1 , further comprising a substrate,

wherein the first ferromagnetic layer is located farther from the substrate than the magnetic recording layer.

6. The magnetic domain wall movement element according to claim 5 , wherein a lateral surface of the magnetic recording layer in the second direction is inclined with respect to the first direction.

7. The magnetic domain wall movement element according to claim 5 , wherein the first electrode has a first inclined section inclined with respect to the first direction.

8. The magnetic domain wall movement element according to claim 5 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in a third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion having an inclination angle larger than an inclination angle with respect to the first direction of the second lateral surface.

9. The magnetic domain wall movement element according to claim 5 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in the third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion in which an inclination thereof with respect to the first direction changes discontinuously.

10. A magnetic recording array comprising a plurality of the magnetic domain wall movement elements according to claim 1 .

11. The magnetic domain wall movement element according to claim 2 , further comprising a substrate,

wherein the first ferromagnetic layer is located closer to the substrate than the magnetic recording layer.

12. The magnetic domain wall movement element according to claim 2 , further comprising a substrate,

wherein the first ferromagnetic layer is located farther from the substrate than the magnetic recording layer.

13. The magnetic domain wall movement element according to claim 6 , wherein the first electrode has a first inclined section inclined with respect to the first direction.

14. The magnetic domain wall movement element according to claim 6 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in a third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion having an inclination angle larger than an inclination angle with respect to the first direction of the second lateral surface.

15. The magnetic domain wall movement element according to claim 7 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in a third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion having an inclination angle larger than an inclination angle with respect to the first direction of the second lateral surface.

16. The magnetic domain wall movement element according to claim 6 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in the third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion in which an inclination thereof with respect to the first direction changes discontinuously.

17. The magnetic domain wall movement element according to claim 7 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in the third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion in which an inclination thereof with respect to the first direction changes discontinuously.

18. The magnetic domain wall movement element according to claim 8 , wherein on a virtual cross-section passing through a center of the magnetic recording layer in the third direction orthogonal to the first direction and the second direction and extending in the first direction and the second direction,

the first electrode has a first lateral surface and a second lateral surface located closer to the second electrode than the first lateral surface, and

the first lateral surface has a portion in which an inclination thereof with respect to the first direction changes discontinuously.

19. A magnetic recording array comprising a plurality of the magnetic domain wall movement elements according to claim 2 .

20. A magnetic recording array comprising a plurality of the magnetic domain wall movement elements according to claim 3 .