Photoelectric conversion apparatus, photoelectric conversion system, and moving object
A photoelectric conversion apparatus includes a first diode which is an avalanche multiplication-type and a second diode which is an avalanche multiplication-type formed within a semiconductor substrate, a first transistor forming a first quench element, and a second transistor forming a second quench element. The first transistor and the second transistor are disposed between the first diode and the second diode in a planar view. The first transistor and the second transistor are disposed in a common semiconductor well region formed within the semiconductor substrate.
1. A photoelectric conversion apparatus comprising:
a first semiconductor substrate;
a second semiconductor substrate;
a first diode which is an avalanche multiplication-type and a second diode which is an avalanche multiplication-type formed within the first semiconductor substrate;
a first transistor forming a first quench element connected to the first diode;
a second transistor forming a second quench element connected to the second diode;
a pulse shaping circuit configured to shape an output from the first diode into a pulse; and
a counter circuit configured to process a signal corresponding to an output from the pulse shaping circuit,
wherein the first semiconductor substrate and the second semiconductor substrate are stacked,
wherein the counter circuit is disposed in the second semiconductor substrate,
wherein the first transistor and the second transistor are disposed between the first diode and the second diode in a planar view, and
wherein a part of the first transistor and a part of the second transistor are disposed in a common first semiconductor well region formed in the first semiconductor substrate.
2. The photoelectric conversion apparatus according to claim 1 , wherein the first diode, the second diode, and the first semiconductor well region are arranged on a straight line in the planar view.
3. The photoelectric conversion apparatus according to claim 2 , wherein the first diode and the second diode are arranged line-symmetrically with respect to a reference line in the planar view, and
wherein the first transistor and the second transistor are arranged line-symmetrically with respect to a line perpendicular to the reference line in the planar view.
4. The photoelectric conversion apparatus according to claim 3 , wherein the reference line is a line connecting a center of the first diode and a center of the second diode.
5. The photoelectric conversion apparatus according to claim 3 , wherein the reference line is a line connecting the first diode and the second diode at the shortest distance.
6. The photoelectric conversion apparatus according to claim 1 , further comprising:
a third diode and a fourth diode each being of an avalanche multiplication-type and each being formed in the first semiconductor substrate;
a third transistor forming a third quench element connected to the third diode; and
a fourth transistor forming a fourth quench element connected to the fourth diode,
wherein the first diode and the second diode are lined up in a first direction in the planar view,
wherein the third diode and the fourth diode are lined up in a second direction perpendicular to the first direction in the planar view, and
wherein a part of the third transistor and a part of the fourth transistor are formed in the common first semiconductor well region.
7. The photoelectric conversion apparatus according to claim 1 , wherein a first isolation region is provided between a first semiconductor region of a second conductivity type that forms the first diode, and the first semiconductor well region in the planar view, and
wherein a boundary line between the first isolation region and the first semiconductor region is perpendicular to a line connecting the first diode and the second diode in the planar view.
8. The photoelectric conversion apparatus according to claim 1 , wherein a first isolation region is provided between a first semiconductor region of a second conductivity type that forms the first diode, and the first semiconductor well region in the planar view,
wherein at least one second isolation region is provided between the first transistor and the second transistor, and
wherein a length of the second isolation region is shorter than a length of the first isolation region.
9. The photoelectric conversion apparatus according to claim 1 , wherein the first semiconductor well region is a semiconductor region of a first conductivity type, which is the same as a signal charge.
10. The photoelectric conversion apparatus according to claim 9 , further comprising:
a second semiconductor well region disposed in the first semiconductor substrate and having a second conductivity type,
wherein the pulse shaping circuit includes a fifth transistor including a source and a drain of the first conductivity type, and a sixth transistor including a source and a drain of the second conductivity type, and
wherein the source and the drain of the sixth transistor are formed in the first semiconductor well region, and the source and the drain of the fifth transistor are formed in the second semiconductor well region.
11. The photoelectric conversion apparatus according to claim 10 , wherein the first semiconductor well region is arranged so as to surround the second semiconductor well region in the planar view.
12. The photoelectric conversion apparatus according to claim 1 , further comprising:
a counter circuit formed in the first semiconductor substrate,
wherein a part of at least one of transistors included in the counter circuit is formed in the first semiconductor well region.
13. The photoelectric conversion apparatus according to claim 1 , wherein the pulse shaping circuit is disposed in the second semiconductor substrate.
14. The photoelectric conversion apparatus according to claim 13 , wherein the pulse shaping circuit includes,
a fifth transistor of a first conductivity type and a sixth transistor of a second conductivity type, and
a second semiconductor well region disposed in the first semiconductor substrate and of the second conductivity type,
wherein a part of the sixth transistor is formed in the first semiconductor well region, and
wherein a part of the fifth transistor is formed in the second semiconductor well region.
15. The photoelectric conversion apparatus according to claim 14 , further comprising:
a first well contact portion connected to the first semiconductor well region,
wherein the first well contact portion is shared by a pixel including the first diode and a pixel including the second diode.
16. A photoelectric conversion system comprising:
the photoelectric conversion apparatus according to claim 15 ; and
a signal processing unit configured to process a signal output from the photoelectric conversion apparatus.
17. A moving object comprising:
the photoelectric conversion apparatus according to claim 15 ;
a distance information acquisition unit configured to acquire information about distance to a target, from a parallax image based on a signal from the photoelectric conversion apparatus; and
a control unit configured to control the moving object based on the distance information.
18. A photoelectric conversion system comprising:
the photoelectric conversion apparatus according to claim 1 ; and
a signal processing unit configured to process a signal output from the photoelectric conversion apparatus.
19. A moving object comprising:
the photoelectric conversion apparatus according to claim 1 ;
a distance information acquisition unit configured to acquire information about distance to a target, from a parallax image based on a signal from the photoelectric conversion apparatus; and
a control unit configured to control the moving object based on the distance information.