Substrate processing apparatus and method for processing substrates
The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.
1. A substrate processing apparatus, comprising:
a housing;
a first reactor constructed and arranged to process a rack with a plurality of substrates therein;
a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer the rack and a plurality of substrates to and from the first and second reactor;
wherein the second reactor is provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of each of the plurality of substrates in the rack in the second reactor, and
wherein the illumination system comprises at least three elongated radiation sources spaced about a periphery of the rack when the rack is positioned within the second reactor, each of the elongated radiation sources extending in a direction perpendicular to the top surfaces of the plurality of the substrates and extending over a full length of the rack to illuminate the substrates over the full length of the rack,
wherein each of the at least three elongated radiation sources is arranged to generate a radiation beam from the side of the rack downward to one of the top surfaces of the plurality of substrates, wherein the average direction of radiation of the radiation beam is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates, and
wherein the substrate processing apparatus further comprises a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of at least one of the at least three elongated radiation sources along the width of the rack.
2. The substrate processing apparatus according to claim 1 , wherein the first reactor comprises an inlet constructed and arranged to provide a first precursor in the first reactor to deposit a layer on the substrates in the rack.
3. The substrate processing apparatus according to claim 1 , wherein each of the elongated radiation sources comprises a tube configured and wherein the illumination system illuminates at least three different sides of the substrate.
4. The substrate processing apparatus according to claim 1 , further comprising plasma shielding configured to suppress plasma in the second reactor.
5. The substrate processing apparatus according to claim 1 , wherein the each of the elongated radiation sources comprises a radiation source irradiating ultraviolet radiation onto top surfaces of a plurality of the substrates.
6. The substrate processing apparatus according to claim 1 , wherein the substrate transfer device comprises an elevator constructed and arranged to move the rack in the first reactor.
7. The substrate processing apparatus according to claim 6 , wherein the second reactor is constructed and arranged to receive the substrate rack and the illumination system is constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto the top surface from a side of the rack.
8. The substrate processing apparatus according to claim 7 , wherein the apparatus comprises a rack conveyer constructed and arranged to horizontally transfer a rack with substrates from the first to the second reactor.
9. The substrate processing apparatus according to claim 1 , wherein the first reactor comprises a heater constructed and arranged to heat the plurality of substrates in the first reactor and an inlet connected to a source of a first precursor to deposit a layer on the substrates.
10. The substrate processing apparatus according to claim 1 , wherein the first reactor comprises an inlet constructed and arranged to be connected to a source of a nitrogen comprising precursor to deposit a nitrogen comprising layer on the substrate.
11. The substrate processing apparatus according to claim 1 , further comprising an optical wave guide.
12. The substrate processing apparatus according to claim 2 , wherein the substrate transfer device is provided in a substrate transfer device chamber and the apparatus is provided with an inert space creation system to create an inert space in the substrate transfer device chamber.
13. The substrate processing apparatus according to claim 1 , wherein the second reactor is provided with an inert space creation system to create an inert space in the second reactor.
14. The substrate processing apparatus according to claim 1 , wherein the second reactor is provided with a cleaning inlet to provide a cleaning gas in the second reactor to clean outgassing products away in the second reactor or prepare a substrate.
15. A substrate processing apparatus, comprising:
a housing;
a first reactor constructed and arranged to process a rack with a plurality of substrates therein;
a second reactor constructed and arranged to receive the rack; and,
a substrate transfer device constructed and arranged to transfer the rack to and from the first and second reactor;
wherein the second reactor is provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of each of the plurality of substrates in the rack in the second reactor, and
wherein the illumination system comprises a plurality of individually controllable radiation sources arranged in at least one linear set that extends perpendicular to the top surfaces of the plurality of substrates along a full length of the rack, and
wherein the substrate processing apparatus further comprises a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of at least one of the plurality of individually controllable radiation sources along the width of the rack.
16. The substrate processing apparatus of claim 15 , wherein each of the individually controllable radiation sources comprises a light emitting diode.
17. The substrate processing apparatus of claim 15 , wherein each of the plurality of individually controllable radiation sources is arranged to generate a radiation beam from the side of the rack downward to one of the top surfaces of the plurality of substrates, wherein the average direction of radiation of the radiation beam is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.
18. The substrate processing apparatus of claim 15 , wherein the individually controllable radiation sources comprise a first group of the individually controllable radiation sources and a second group of the individually controllable radiation sources, wherein the first group of the individually controllable radiation sources is configured to direct radiation towards a first portion of the top surfaces, and wherein the second group of the individually controllable radiation sources is configured to direct radiation towards a second portion of the top surfaces.
19. The substrate processing apparatus of claim 15 , further comprising a rotation device to rotate the plurality of substrates in the second reactor about a vertical axis extending through the centers of the plurality of substrates, whereby each of the plurality of substrates is more uniformly illuminated by the illumination system.
20. A substrate processing apparatus, comprising:
a housing;
within the housing, a first reactor constructed and arranged to process a rack with a plurality of substrates therein;
within the housing, a second reactor constructed and arranged to process a substrate;
within the housing, plasma shielding configured to suppress plasma in the second reactor; and,
within the housing, a substrate transfer device constructed and arranged to transfer the rack and a plurality of substrates to and from the first and second reactor;
wherein only the second reactor is provided with an illumination system, comprising a plurality of individually controllable radiation sources, constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers concurrently onto a top surface of each of the plurality of substrates in the rack in the second reactor,
wherein only the first reactor comprises an inlet connected to a source of a first precursor to deposit a layer on the substrates, whereby the first reactor is configured for depositing the layer on the substrates and the second reactor is configured for illuminating the top surface of each of the plurality of substrates with the layer without further deposition occurring in the second reactor, and
wherein the substrate processing apparatus further comprises a power controller configured to control the power of the illumination system, wherein the power controller is programmed to adjust a radiation output of at least one of the plurality of individually controllable radiation sources along the width of the rack.
21. The substrate processing apparatus of claim 20 , wherein the illumination system comprises a helical shaped radiation source and wherein the rack is positionable within a center of the helical shaped radiation source, whereby the ultraviolet radiation is directed inward from sides of the rack onto the top surface of each of the plurality of substrates.
22. The substrate processing apparatus of claim 20 , wherein the illumination system comprises at least three elongated radiation sources spaced about a periphery of the rack when the rack is positioned within the second reactor, each of the elongated radiation sources extending in a direction perpendicular to the top surfaces of the plurality of the substrates and extending over a full length of the rack to illuminate the substrates over the full length of the rack.
23. The substrate processing apparatus of claim 20 , wherein the illumination system comprises a plurality of individually controllable radiation sources arranged in at least one linear set that extends perpendicular to the top surfaces of the plurality of substrates along a full length of the rack.
24. The substrate processing apparatus of claim 23 , wherein each of the individually controllable radiation sources comprises a light emitting diode.
25. The substrate processing apparatus of claim 24 , wherein each of the plurality of individually controllable radiation sources is arranged to generate a radiation beam from the side of the rack downward to one of the top surfaces of the plurality of substrates, wherein the average direction of radiation of the radiation beam is at an angle in the range of 80 to 89.5 degrees with respect to a line perpendicular to the top surfaces of the plurality of substrates.
26. The substrate processing apparatus of claim 20 , wherein the substrate transfer device comprises an inert space creation system configured to create an inert space in a substrate transfer device chamber and wherein the rack and a plurality of substrates are transferred to and from the first and second reactor through the substrate transfer device chamber.
27. The substrate processing apparatus of claim 26 , wherein the inert space creation system comprises at least one of a nitrogen purge system, a vacuum evacuation system, and a low oxygen system fluidly coupled to the substrate transfer device chamber.