Methods for preparing nano-protective coating with a modulation structure

1. A method for generating a nano-protective coating, comprising:

placing a substrate in a reaction chamber of a nano-coating preparation equipment, wherein the reaction chamber is continuously vacuumized, and wherein a vacuum degree in the reaction chamber is 10 to 200 mTorr;

introducing an inert gas, wherein the inert gas includes helium (He) and/or argon (Ar);

turning on a movement mechanism so that the substrate is moved in the reaction chamber;

introducing a first monomer into the reaction chamber to achieve a vacuum degree of 30-300 mTorr;

turning on a plasma discharge for a chemical vapor deposition;

stopping introducing the first monomer;

introducing a second monomer into the reaction chamber; and

forming an organosilicon nano-coating on a surface of the substrate by the chemical vapor deposition;

wherein the first monomer includes a mixture of at least one monofunctional unsaturated fluorocarbon resin and at least one first polyfunctional unsaturated hydrocarbon;

wherein the second monomer includes a mixture of at least one organosilicon monomer containing a double bond, Si—Cl, Si—O—C, Si—N—Si, Si—O—Si structure or an annular structure and at least one second polyfunctional unsaturated hydrocarbon;

wherein a mass fraction of the first or second polyfunctional unsaturated hydrocarbon or hydrocarbon derivative in monomer vapor formed by the first monomer and the second monomer is 15-65%; and

wherein a flow rate of the monomer vapor is 10-1000 μL/min.

2. The method of claim 1 , wherein the organosilicon nano-coating includes multiple individual coatings, and wherein each individual coating includes a nano-level organosilicon coating and a nano-level organic fluorocarbon coating.

3. The method of claim 1 , wherein the organosilicon nano-coating has a thickness of 20 nm-10 μm.

4. The method of claim 1 , wherein the organosilicon nano-coating has a hardness of HB-4H.

5. The method of claim 1 , further comprising:

turning off the plasma discharge;

continuing to maintain a vacuum degree of the reaction chamber to 10-200 mTorr for at least one minute;

introducing air to the reaction chamber until a pressure of the reaction chamber equals to an atmospheric pressure;

turning off the movement mechanism such that the substrate is stopped; and

removing the substrate from the reaction chamber.

6. The method of claim 1 , wherein the substrate is moved in a linear manner.

7. The method of claim 1 , wherein the substrate is moved in a curved manner.

8. The method of claim 7 , wherein the curved manner corresponds to a circular movement, an elliptical movement, a planetary movement, or a spherical movement.

9. The method of claim 1 , wherein the substrate includes a solid material including an electronic product, an electrical component, a semi-finished electronic assembly, a printed circuit board (PCB), a metal plate, or a polytetrafluoroethylene sheet.

10. The method of claim 1 , wherein the reaction chamber includes a rotating chamber or a cubic chamber with a volume of 50-1000 L, and wherein a temperature of the reaction chamber is controlled at 30-60° C., and wherein a flow rate of the inert gas is 5-300 SCCM.

11. The method of claim 1 , further comprising:

forming the organosilicon nano-coating on the surface of the substrate in a pre-treatment stage and a coating stage,

wherein, in the pre-treatment stage, a plasma discharge power is 150-600 W and a continuous discharge time is 60-450 s, and

wherein, in the coating stage, the plasma discharge power is adjusted to 10-150 W and the continuous discharge time is 600-3600 s.

12. The method of claim 1 , wherein the plasma discharge includes a periodic alternating discharge, and wherein the periodic alternating discharge corresponds to a waveform, and wherein the waveform includes at least one of a sawtooth waveform, a sine waveform, or a square wave waveform.

13. The method of claim 1 , wherein the monofunctional unsaturated fluorocarbon resin includes at least one of: 3-(perfluoro-5-methylhexyl)-2-hydroxypropyl methacrylate, 2-(perfluorodecyl) ethyl methacrylate, 2-(perfluorohexyl) ethyl methacrylate, 2-(perfluorododecyl) ethyl acrylate, 2-perfluorooctyl ethyl acrylate, 1H, 1H, 2H, 2H-perfluorooctyl acrylate, 2-(perfluorobutyl) ethyl acrylate, (2H-perfluoropropyl)-2-acrylate, (perfluorocyclohexyl) methacrylate, 3,3,3-trifluoro-1-propyne, 1-ethynyl-3, 5-difluorobenzene or 4-ethynyltrifluorotoluene.

14. The method of claim 1 , wherein the organosilicon monomer includes at least one of: triphenylchlorosilane, methylvinyldichlorosilane, trichloro (3,3,3-trifluoropropyl) silane, trifluoropropylmethyldichlorosilane, dimethylphenylchlorosilane, tributylchlorosilane, or benzyldimethylchlorosilane.

15. The method of claim 1 , wherein the organosilicon monomer includes at least one of: tetramethoxysilane, trimethoxyhydrosiloxane, n-octyltriethoxysilane, phenyltriethoxysilane, vinyltris (2-methoxythoxy)silane, triethylvinylsilane, hexaethylcyclotrisiloxane, 3-(methacryloyloxy)propyltrimethoxysilane, phenyltris(trimethylsiloxy)silane, diphenyldiethoxysilane, dodecyltrimethoxysilane, n-octyltriethoxysilane, dimethoxysilane, or 3-chloropropyltrimethoxysilane.

16. The method of claim 1 , wherein the organosilicon monomer includes at least one of: hexamethyldisilazane, hexamethylcyclotrisilaneamino, hexamethyldisilazane, or hexamethyl disiloxane.

17. The method of claim 1 , wherein the organosilicon monomer includes at least one of: thylcyclotrisiloxane, octamethylcyclotetrasiloxane, hexaphenylcyclotrisiloxane, decamethylcyclopentasiloxane, octaphenylcyclotetra siloxane, triphenylhydroxysilane, diphenyldihydroxysilane, bis (triphenylsilyl) ester, trifluoropropylmethylcyclotrisiloxane,2,4,4-tetramethyl-6,6,8,8-tetraphenylcyclotetrasiloxane, tetramethyltetravinylcyclotetrasiloxane, (3-glycidyloxypropyl) triethoxysilane, and 3-glycidyloxypropyltrimethoxysilane.

18. The method of claim 1 , further comprising introducing oxygen at a flow rate of 10-100 μL/min so as to harden the organosilicon nano-coating.

19. The method of claim 1 , further comprising introducing water vapor at a flow rate of 10-100 μL/min so as to harden the organosilicon nano-coating.

20. A method for generating a nano-protective coating, comprising:

placing a substrate in a reaction chamber of a nano-coating preparation equipment, wherein the reaction chamber is continuously vacuumized, and wherein a vacuum degree in the reaction chamber is 10 to 200 mTorr;

introducing an inert gas, wherein the inert gas includes helium (He) and/or argon (Ar);

turning on a movement mechanism so that the substrate is moved in the reaction chamber;

introducing a first monomer into the reaction chamber to achieve a vacuum degree of 30-300 mTorr;

turning on a plasma discharge for a chemical vapor deposition;

stopping introducing the first monomer;

introducing a second monomer into the reaction chamber; and

forming an organosilicon nano-coating on a surface of the substrate by the chemical vapor deposition;

wherein the second monomer includes a mixture of at least one monofunctional unsaturated fluorocarbon resin and at least one first polyfunctional unsaturated hydrocarbon or hydrocarbon derivative;

wherein the first monomer includes a mixture of at least one organosilicon monomer containing a double bond, Si—Cl, Si—O—C, Si—N—Si, Si—O—Si structure or an annular structure and at least one second polyfunctional unsaturated hydrocarbon or hydrocarbon derivative;

wherein a mass fraction of the first or second polyfunctional unsaturated hydrocarbon in monomer vapor formed by the first monomer and the second monomer is 15-65%; and

wherein a flow rate of the monomer vapor is 10-1000 μL/min.

21. The method of claim 20 , further comprising introducing oxygen at a flow rate of 10-100 μL/min so as to harden the organosilicon nano-coating.

22. The method of claim 20 , further comprising introducing water vapor at a flow rate of 10-100 μL/min so as to harden the organosilicon nano-coating.

23. A method for generating a nano-protective coating, comprising:

placing a substrate in a reaction chamber of a nano-coating preparation equipment, wherein the reaction chamber is continuously vacuumized, and wherein a vacuum degree in the reaction chamber is 10 to 200 mTorr;

introducing an inert gas, wherein the inert gas includes helium (He) and/or argon (Ar);

turning on a movement mechanism so that the substrate is moved in the reaction chamber;

introducing a first monomer into the reaction chamber to achieve a vacuum degree of 30-300 mTorr;

turning on a plasma discharge for chemical vapor deposition;

stopping introducing the first monomer;

introducing a second monomer into the reaction chamber;

forming an organosilicon nano-coating on a surface of the substrate by the chemical vapor deposition;

wherein the first monomer includes at least one dipole moment organic monomer and at least one polyfunctional unsaturated hydrocarbon;

wherein a mass fraction of the polyfunctional unsaturated hydrocarbon in the monomer vapor formed by the first monomer and the second monomer is 15-65%; and

wherein a flow rate of the monomer vapor is 10-1000 μL/min.

24. The method of claim 23 , wherein the second monomer includes at least one monofunctional unsaturated fluorocarbon resin and at least one polyfunctional unsaturated hydrocarbon or hydrocarbon derivative.

25. The method of claim 23 , wherein the second monomer includes a double bond, Si—Cl, Si—O—C, Si—N—Si, Si—O—Si structure or an annular structure and at least one polyfunctional unsaturated hydrocarbon or hydrocarbon derivative.

26. The method of claim 23 , further comprising introducing oxygen at a flow rate of 10-100 μL/min so as to harden the organosilicon nano-coating.

27. The method of claim 23 , further comprising introducing water vapor at a flow rate of 10-100 μL/min so as to harden the organosilicon nano-coating.