Charged particle detector with gain element
A detector may be provided with a sensing element or an array of sensing elements, each of the sensing elements may have a corresponding gain element. A substrate may be provided having a sensing element and a gain element integrated together. The gain element may include a section in which, along a direction perpendicular to an incidence direction of an electron beam, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity may be provided adjacent to the region of second conductivity. The sensing element may include a section in which, along the incidence direction, a region of fourth conductivity is provided adjacent to an intrinsic region of the substrate, and the region of second conductivity may be provided adjacent to the intrinsic region.
1. A detector for a charged particle beam apparatus, the detector comprising:
a sensing element; and
a gain element, wherein
the gain element includes a section in which, along a second direction perpendicular to a first direction, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity is provided adjacent to the region of second conductivity, the region of second conductivity being interposed between the region of first conductivity and the region of third conductivity;
the sensing element comprises a first layer including a region of fourth conductivity;
the sensing element and the gain element are aligned in the first direction such that a virtual line extending in the first direction passes through the first layer and one of the region of first conductivity, the region of second conductivity, or the region of third conductivity; and
the sensing element includes a section in which, along the first direction, the region of fourth conductivity is provided adjacent to an intrinsic region, and the region of second conductivity is provided adjacent to the intrinsic region.
2. The detector of claim 1 , wherein the region of second conductivity protrudes beyond the region of first conductivity and into the intrinsic region.
3. The detector of claim 1 , wherein the region of third conductivity is of the same conductivity type as the first conductivity and is more conductive than the region of first conductivity.
4. The detector of claim 3 , wherein
the region of first conductivity is an n-type semiconductor,
the region of second conductivity a p-type semiconductor, and
the region of third conductivity is an n-type semiconductor.
5. The detector of claim 3 , wherein
the region of first conductivity is a p-type semiconductor,
the region of second conductivity an n-type semiconductor, and
the region of third conductivity is a p-type semiconductor.
6. The detector of claim 1 , wherein the gain element is a bipolar junction transistor.
7. The detector of claim 1 , wherein the region of fourth conductivity is of the same conductivity type as the first conductivity and is more conductive than the region of first conductivity and is less conductive than the region of third conductivity.
8. The detector of claim 7 , wherein the region of fourth conductivity is an n-type semiconductor.
9. The detector of claim 7 , wherein the region of fourth conductivity is a p-type semiconductor.
10. The detector of claim 1 , wherein the gain element is one of a plurality of gain elements included in the detector.
11. A method comprising:
forming a sensing element in a substrate; and
forming a gain element in the substrate,
wherein
the gain element includes a section in which, along a second direction perpendicular to a first direction, a region of first conductivity is provided adjacent to a region of second conductivity, and a region of third conductivity is provided adjacent to the region of second conductivity, the region of second conductivity being interposed between the region of first conductivity and the region of third conductivity;
the sensing element comprises a first layer including a region of fourth conductivity;
the sensing element and the gain element are aligned in the first direction such that a virtual line extending in the first direction passes through the first layer and one of the region of first conductivity, the region of second conductivity, or the region of third conductivity; and
the sensing element includes a section in which, along the first direction, the region of fourth conductivity is provided adjacent to an intrinsic region, and the region of second conductivity is provided adjacent to the intrinsic region.
12. The method of claim 11 , wherein forming the sensing element and forming the gain element comprises semiconductor doping.
13. The method of claim 11 , wherein forming the gain element comprises:
implanting the region of second conductivity into the region of first conductivity to a depth greater than a depth of the region of first conductivity.
14. The detector of claim 1 , the sensing element comprises the region of second conductivity.
15. A detector for a charged particle beam apparatus, the detector comprising:
a sensing element; and
a gain element, wherein
the sensing element and the gain element are aligned in a first direction such that a virtual line in the first direction passes through the sensing element and the gain element,
the gain element comprises:
a region of first conductivity, a region of second conductivity, and a region of third conductivity;
the sensing element comprises the region of second conductivity,
wherein along a second direction perpendicular to the first direction, the region of first conductivity is provided adjacent to the region of second conductivity, the region of third conductivity is provided adjacent to the region of second conductivity, and the region of second conductivity is interposed between the region of first conductivity and the region of third conductivity.