IP Library › Granted Patent US 10,790,819
Granted Patent B1
US 10,790,819 · App. 16/801,557 · Granted Sep 29, 2020

Power switch control

Inventors: Yuzhi Zhang (Apex, NC); Utkarsh Raheja (Raleigh, NC); Pietro Cairoli (Cary, NC)
Assignee: ABB Schweiz AG
H03K17/687H03K17/735
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Quick Facts
Patent No.
US 10,790,819
App. No.
16/801,557
Granted
Sep 29, 2020
Kind
B1
Abstract

Systems, methods, techniques and apparatuses of power switch control are disclosed. One exemplary embodiment is a power switch comprising a thyristor-based branch including a thyristor device; a FET-based branch coupled in parallel with the thyristor-based branch and including a FET device; and a controller. The controller is structured to turn on the FET device, turn on the thyristor device after turning on the FET device based on a thyristor voltage threshold, and update the thyristor voltage threshold based on a voltage measurement corresponding to the thyristor-based branch measured while the thyristor device is turned on.

Claims (35)

1. An apparatus comprising:

a thyristor-based branch including a thyristor device;

a FET-based branch coupled in parallel with the thyristor-based branch and including a FET device; and

a controller structured to turn on the FET device, turn on the thyristor device after turning on the FET device based on a thyristor voltage threshold, and update the thyristor voltage threshold based on a voltage measurement corresponding to the thyristor-based branch measured while the thyristor device is turned on.

2. The apparatus of claim 1 , wherein the controller is structured to turn on the thyristor device in response to determining a second voltage measurement is greater than the thyristor voltage threshold.

3. The apparatus of claim 2 , wherein the controller is structured to turn on the thyristor device also in response to determining the thyristor device is turned off and determining a current flowing through the FET-based branch is increasing.

4. The apparatus of claim 2 , wherein the controller includes a voltage sensor structured to transmit a series of voltage measurements at a sampling rate, the series of voltage measurements including the first voltage measurement and the second voltage measurement.

5. The apparatus of claim 4 , wherein the controller is structured to turn on the thyristor device by transmitting a gate pulse to the thyristor device, and wherein the updated thyristor threshold voltage is equal to a sum of a voltage margin and the voltage measurement of the series of voltage measurements taken after the gate pulse terminates.

6. The apparatus of claim 4 , wherein the controller is structured to turn on the thyristor device by transmitting a gate pulse to the thyristor device, and wherein the controller updates the thyristor threshold voltage using the following equation, where V TH is the updated thyristor voltage threshold, V AK is the series of voltage measurements, n is an index number of the second voltage measurement, T on is a width of the gate pulse, T s is the sampling rate of the series of measurements, and V margin is a noise margin voltage:

V TH =V AK [ n +( T on /T s )]+ V margin .

7. The apparatus of claim 1 , wherein the controller is structured to turn off the thyristor device, and then turn on the thyristor device using the updated thyristor threshold voltage.

8. A method comprising:

operating a thyristor-based branch including a thyristor device and a FET-based branch coupled in parallel with the thyristor-based branch and including a FET device;

turning on the FET device;

turning on the thyristor device after turning on the FET device based on a thyristor voltage threshold;

receiving a voltage measurement measured while the thyristor device is turned on; and

updating the thyristor voltage threshold based on the voltage measurement.

9. The method of claim 8 , wherein turning on the thyristor device in response to determining a second voltage measurement is greater than the thyristor voltage threshold.

10. The method of claim 9 , wherein turning on the thyristor device is also in response to determining the thyristor device is turned off and determining a current flowing through the FET-based branch is increasing.

11. The method of claim 9 , further comprising operating a controller including a voltage sensor structured to transmit a series of voltage measurements at a sampling rate, the series of voltage measurements including the first voltage measurement and the second voltage measurement.

12. The method of claim 11 , wherein turning on the thyristor device includes transmitting a gate pulse to the thyristor device, and wherein the updated thyristor threshold voltage is equal to a sum of a noise margin voltage and the voltage measurement of the series of voltage measurements taken after the gate pulse terminates.

13. The method of claim 11 , wherein turning on the thyristor device includes transmitting a gate pulse to the thyristor device, and wherein updating the thyristor threshold voltage includes using the following equation, where V TH is the updated thyristor voltage threshold, V AK is the series of voltage measurements, n is an index number of the second voltage measurement, T on is a width of the gate pulse, T s is the sampling rate of the series of measurements, and V margin is a noise margin voltage:

V TH =V AK [ n +( T on /T s )]+ V margin .

14. The method of claim 8 , further comprising:

turning off the thyristor device; and

turning on the thyristor device using the updated thyristor threshold voltage.

15. A controller for a power switch including a FET device and a thyristor device, the controller comprising:

a voltage sensor structured to output a series of voltage measurements corresponding to a voltage of the thyristor device including a first voltage measurement; and

a processing device structured to execute a set of instructions effective to turn on the FET device, turn on the thyristor device after turning on the FET device based on a thyristor voltage threshold, update the thyristor voltage threshold based on the first voltage measurement measured while the thyristor device is turned on, turn off the thyristor device, and turn on the thyristor device using the updated thyristor threshold voltage.

16. The controller of claim 15 , wherein the controller is structured to turn on the thyristor device in response to determining a second voltage measurement of the series of voltage measurements is greater than the thyristor voltage threshold.

17. The controller of claim 16 , wherein the controller is structured to turn on the thyristor device also in response to determining the thyristor device is turned off and determining a current flowing through the FET device is increasing.

18. The controller of claim 16 , wherein the controller is structured to turn on the thyristor device by transmitting a gate pulse to the thyristor device.

19. The controller of claim 18 , wherein the updated thyristor threshold voltage is equal to a sum of a voltage margin and the voltage measurement of the series of voltage measurements taken after the gate pulse terminates.

20. The controller of claim 18 , wherein the controller updates the thyristor threshold voltage using the following equation, where V TH is the updated thyristor voltage threshold, V AK is the series of voltage measurements, n is an index number of the second voltage measurement, T on is a width of the gate pulse, T s is the sampling rate of the series of measurements, and V margin is a noise margin voltage:

V TH =V AK [ n +( T on /T s )]+ V margin .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 3, 2020
From: ZHANG, YUZHI; RAHEJA, UTKARSH; CAIROLI, PIETRO
To: ABB SCHWEIZ AG
Reel/Frame 051998/0349 →
Cited By (1)
US 12,488,763