Light emitting device and projector
In a light emitting device, a columnar part includes a first semiconductor layer, a second semiconductor layer different in conductivity type from the first semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, the first semiconductor layer is disposed between the substrate and the light emitting layer, the light emitting layer includes a first layer, and a second layer larger in bandgap than the first layer, the first semiconductor layer has a facet plane, the first layer has a facet plane, the facet plane of the first semiconductor layer is provided with the first layer, and θ2>θ1, in which θ1 is a tilt angle of the facet plane of the first semiconductor layer with respect to a surface of the substrate provided with the laminated structure, and θ2 is a tilt angle of the facet plane of the first layer provided to the facet plane of the first semiconductor layer with respect to the surface of the substrate.
1. A light emitting device comprising:
a substrate; and
a laminated structure provided to the substrate, and including a plurality of columnar parts, wherein
the columnar part includes
a first semiconductor layer,
a second semiconductor layer different in conductivity type from the first semiconductor layer, and
a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer,
the first semiconductor layer is disposed between the substrate and the light emitting layer,
the second semiconductor layer includes
a third semiconductor layer, and
a fourth semiconductor layer lower in impurity concentration than the third semiconductor layer,
the light emitting layer has a facet plane,
the fourth semiconductor layer has a facet plane,
the facet plane of the light emitting layer is provided with the fourth semiconductor layer, and
θ4>θ3, in which θ3 is a tilt angle of the facet plane of the light emitting layer with respect to a surface of the substrate provided with the laminated structure, and θ4 is a tilt angle of the facet plane of the fourth semiconductor layer provided to the facet plane of the light emitting layer with respect to the surface of the substrate.
2. The light emitting device according to claim 1 , wherein
the light emitting layer has a c-plane, and
the fourth semiconductor layer has a c-plane.
3. The light emitting device according to claim 2 , wherein
in a plan view viewed in a stacking direction of the laminated structure, the c-plane of the light emitting layer is larger than the facet plane of the light emitting layer.
4. The light emitting device according to claim 2 , wherein
in a plan view viewed in a stacking direction of the laminated structure, the c-plane of the fourth semiconductor layer is larger than the facet plane of the fourth semiconductor layer.
5. A projector comprising:
The light emitting device according to claim 1 .