Semiconductor manufacturing apparatus

1. A semiconductor manufacturing apparatus, comprising:

a chamber including an interior wall forming a space where plasma is generated, the interior wall including a lower interior wall where an electrostatic chuck is disposed, and an upper interior wall disposed higher than the lower interior wall, the electrostatic chuck configured to support a wafer thereon,

the upper interior wall including an upper member, the upper member comprising:

a base having a ring configuration, the base including a first surface facing inside of the ring configuration thereof, a second surface crossing the first surface, a third surface crossing the first surface, a first edge portion connecting the first surface and the second surface, and a second edge portion connecting the first surface and the third surface, the second edge portion being higher than the first edge portion; and

a particle-resistant layer including a polycrystalline ceramic, the particle-resistant layer including

a first particle-resistant layer provided at the first edge portion,

a second particle-resistant layer provided at the first surface, and

a third particle-resistant layer provided at the second surface,

wherein a particle resistance of the first particle-resistant layer is higher than a particle resistance of the second particle-resistant layer,

wherein a thickness of the first particle-resistant layer is thinner than a thickness of the second particle-resistant layer, and

wherein the first particle-resistant layer is denser than the second particle-resistant layer.

2. The semiconductor manufacturing apparatus according to claim 1 , wherein the particle-resistant layer includes at least one type selected from the group consisting of an oxide of a rare-earth element, a fluoride of a rare-earth element, and an acid fluoride of a rare-earth element.

3. The semiconductor manufacturing apparatus according to claim 2 , wherein the rare-earth element is at least one type selected from the group consisting of Y, Sc, Yb, Ce, Pr, Eu, La, Nd, Pm, Sm, Gd, Tb, Dy, Ho, Er, Tm, and Lu.

4. The semiconductor manufacturing apparatus according to claim 1 , wherein an average crystallite size of the polycrystalline ceramic calculated using a TEM image having a magnification of 400,000 times to 2,000,000 times is not less than 3 nm and not more than 50 nm.

5. The semiconductor manufacturing apparatus according to claim 1 , wherein an average crystallite size of the polycrystalline ceramic in the first particle-resistant layer calculated using a TEM image having a magnification of 400,000 times to 2,000,000 times is smaller than an average crystallite size of the polycrystalline ceramic in the second particle-resistant layer calculated using a TEM image having a magnification of 400,000 times to 2,000,000 times.

6. The semiconductor manufacturing apparatus according to claim 1 , wherein the first particle-resistant layer and the second particle-resistant layer each have arithmetic average heights Sa of 0.060 or less after a reference plasma resistance test.

7. The semiconductor manufacturing apparatus according to claim 1 , wherein a surface of the base where the particle-resistant layer is provided has an arithmetic average roughness Ra of 0.2 μm or less.

8. The semiconductor manufacturing apparatus according to claim 1 , wherein the particle-resistant layer includes a fourth particle-resistant layer provided at the second edge portion, wherein a particle resistance of the fourth particle-resistant layer is higher than the particle resistance of the second particle-resistant layer.