Semiconductor device and manufacturing method thereof
According to one embodiment, a semiconductor device includes a substrate, a first conductive layer, a second conductive layer, and a contact plug. The first conductive layer is disposed on the substrate and contains a metal silicide. The second conductive layer is disposed on the first conductive layer and contains a metal having bond dissociation energy larger than bond dissociation energy of the metal silicide. The contact plug is disposed on the second conductive layer and includes a main body portion, and a peripheral portion disposed on the surface of the main body portion and containing titanium.
1. A semiconductor device comprising:
a base layer including silicon;
a first conductive layer disposed on the base layer and comprising silicon and at least one element selected from titanium, tungsten, cobalt, and nickel;
a contact plug, disposed above the first conductive layer, that includes: (a) a main body portion that includes a metal, and (b) a peripheral portion disposed on a bottom surface and a side surface of the main body portion, the peripheral portion including titanium; and
a second conductive layer disposed between the first conductive layer and the contact plug and including at least one element selected from tungsten, niobium, rhenium, and titanium.
2. The semiconductor device according to claim 1 , wherein the base layer includes a recess and the first conductive layer is disposed in the recess of the substrate.
3. The semiconductor device according to claim 1 , further comprising an insulating layer having a contact hole, wherein the contact plug is disposed in the contact hole of the insulating layer.
4. The semiconductor device according to claim 3 , wherein the insulating layer comprises a stacked body having a plurality of insulating layers.
5. The semiconductor device according to claim 1 , further comprising an insulating layer having a contact hole, wherein the second conductive layer and the contact plug are disposed entirely within the contact hole of the insulating layer.
6. The semiconductor device according to claim 1 , wherein the first conductive layer comprises any one of titanium silicide, tungsten silicide, cobalt silicide, or nickel silicide.
7. The semiconductor device according to claim 1 , wherein the peripheral portion has (a) a first layer disposed on the bottom surface and the side surface of the main body portion and includes titanium nitride and (b) a second layer disposed on a surface of the first layer and includes titanium.
8. The semiconductor device according to claim 1 , further comprising:
a third conductive layer, disposed between the first and second conductive layers, the third conductive layer including titanium nitride.
9. The semiconductor device according to claim 8 , wherein the third conductive layer includes a side surface and a bottom surface surrounded by the first conductive layer.