Semiconductor integrated circuit device
An ESD protection circuit includes a first fin structure having fins of a first conductivity type and a second fin structure having fins of a second conductivity type, the second fin structure being opposed to the first fin structure. A first power interconnect connected with the first fin structure and a signal interconnect connected with the second fin structure are formed in a first interconnect layer, and a second power interconnect connected with the first power interconnect is formed in a second interconnect layer. The width occupied by the second fin structure is greater than that of the first fin structure, and the width of the signal interconnect is greater than that of the first power interconnect.
1. A semiconductor integrated circuit device provided with fin field effect transistors (FETs) comprising:
an electrostatic discharge (ESD) protection circuit,
wherein
the ESD protection circuit includes
a first fin structure having a plurality of fins of a first conductivity type that extend in a first direction and are placed side by side in a second direction perpendicular to the first direction,
a second fin structure having a plurality of fins of a second conductivity type that extend in the first direction and are placed side by side in the second direction, the second fin structure being opposed to the first fin structure in the second direction,
a first power interconnect for power supply that is formed in a first interconnect layer located above the first and second fin structures, extends in a third direction, and is connected with the first fin structure,
a first signal interconnect for signal transfer that is formed in the first interconnect layer, extends in the third direction, and is connected with the second fin structure, and
a second power interconnect for power supply that is formed in a second interconnect layer located above the first interconnect layer, extends in a fourth direction perpendicular to the third direction, and is connected with the first power interconnect,
a width occupied by the second fin structure in the second direction is greater than a width occupied by the first fin structure in the second direction, and
a width of the first signal interconnect in the fourth direction is greater than a width of the first power interconnect in the fourth direction.
2. The semiconductor integrated circuit device of claim 1 , wherein
the third direction is identical to the first direction, and the fourth direction is identical to the second direction.
3. The semiconductor integrated circuit device of claim 1 , wherein
the third direction is identical to the second direction, and the fourth direction is identical to the first direction.
4. The semiconductor integrated circuit device of claim 1 , wherein
a number of fins of the second fin structure is greater than a number of fins of the first fin structure.
5. The semiconductor integrated circuit device of claim 1 , wherein
the first and second fin structures each include a gate formed above the fins to extend in the second direction.
6. The semiconductor integrated circuit device of claim 5 , wherein
in the second fin structure, the gate is floating.
7. The semiconductor integrated circuit device of claim 1 , wherein
the ESD protection circuit includes
a third fin structure placed on at least one side of the second fin structure in the first direction, the third fin structure including a plurality of fins of the first conductivity type that extend in the first direction and are placed side by side in the second direction, and
the third fin structure is supplied with power via the first and second power interconnects.
8. A semiconductor integrated circuit device provided with nanowire field effect transistors (FETs) comprising:
an electrostatic discharge (ESD) protection circuit,
wherein
the ESD protection circuit includes
a first pad structure having a plurality of rows of pads of a first conductivity type that extend in a first direction and are placed side by side in a second direction perpendicular to the first direction,
a second pad structure having a plurality of rows of pads of a second conductivity type that extend in the first direction and are placed side by side in the second direction, the second pad structure being opposed to the first pad structure in the second direction,
a first power interconnect for power supply that is formed in a first interconnect layer located above the first and second pad structures, extends in a third direction, and is connected with the first pad structure,
a first signal interconnect for signal transfer that is formed in the first interconnect layer, extends in the third direction, and is connected with the second pad structure, and
a second power interconnect for power supply that is formed in a second interconnect layer located above the first interconnect layer, extends in a fourth direction perpendicular to the third direction, and is connected with the first power interconnect,
a width occupied by the second pad structure in the second direction is greater than a width occupied by the first pad structure in the second direction, and
a width of the first signal interconnect in the fourth direction is greater than a width of the first power interconnect in the fourth direction.
9. The semiconductor integrated circuit device of claim 8 , wherein
the third direction is identical to the first direction, and the fourth direction is identical to the second direction.
10. The semiconductor integrated circuit device of claim 9 , wherein
the first and second pad structures each include a structural unit having the pads and nanowires alternately lining up in the first direction and a gate formed to surround the nanowires and extend in the second direction.
11. The semiconductor integrated circuit device of claim 10 , wherein
in the second pad structure, the gate is floating.
12. The semiconductor integrated circuit device of claim 8 , wherein
the third direction is identical to the second direction, and the fourth direction is identical to the first direction.
13. The semiconductor integrated circuit device of claim 8 , wherein
a number of rows of pads of the second pad structure in the second direction is greater than a number of rows of pads of the first pad structure in the second direction.
14. A semiconductor integrated circuit device provided with fin field effect transistors (FETs) comprising:
an electrostatic discharge (ESD) protection circuit,
wherein
the ESD protection circuit includes
a first fin structure having a plurality of fins of a first conductivity type that extend in a first direction and are placed side by side in a second direction perpendicular to the first direction and a gate formed above the fins to extend in the second direction,
a second fin structure having a plurality of fins of a second conductivity type that extend in the first direction and are placed side by side in the second direction and a gate formed above the fins to extend in the second direction, the second fin structure being opposed to the first fin structure in the second direction,
a first power interconnect for power supply that is formed in a first interconnect layer located above the first and second fin structures, extends in a third direction, and is connected with the first fin structure,
a first signal interconnect for signal transfer that is formed in the first interconnect layer, extends in the third direction, and is connected with the second fin structure, and
a second power interconnect for power supply that is formed in a second interconnect layer located above the first interconnect layer, extends in a fourth direction perpendicular to the third direction, and is connected with the first power interconnect, and
in the second fin structure, the gate is floating.