IP Library Granted Patent US 11,081,072
Granted Patent B2
US 11,081,072 · App. 16/804,398 · Granted Aug 3, 2021

Display device

Inventors: Kenichi Wakimoto (Atsugi, JP); Masahiko Hayakawa (Atsugi, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
G09G3/3648G09G3/3611H01L27/1225G09G2300/0408G09G2330/022G09G2340/0435G09G2360/14
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Quick Facts
Patent No.
US 11,081,072
App. No.
16/804,398
Granted
Aug 3, 2021
Kind
B2
Abstract

To reduce power consumption of a display device with the use of a simple structure and a simple operation. The display device includes an input device. Input of an image signal to a driver circuit is controlled in accordance with an image operation signal output from the input device. Specifically, input of image signals at the time when the input device is not operated is less frequent than that at the time when the input device is operated. Accordingly, display degradation (deterioration of display quality) caused when the display device is used can be prevented and power consumed when the display device is not used can be reduced.

Claims (64)

1. An active matrix type liquid crystal display device comprising:

a plurality of pixels, each pixel comprising a transistor and a liquid crystal element;

a driver circuit configured to input signals to the plurality of pixels; and

an input device operationally connected to the driver circuit,

wherein a frequency of inputting image signals to the driver circuit when the input device is not operated is less than a frequency of inputting image signals to the driver circuit when the input device is operated,

wherein the transistor comprises:

a gate electrode over a substrate;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;

a silicon oxide film over the source electrode and the drain electrode; and

a silicon nitride film over the silicon oxide film,

wherein the oxide semiconductor layer comprises at least indium, gallium, and zinc,

wherein the oxide semiconductor layer includes a crystalline region with c-axis alignment, and

wherein the oxide semiconductor layer has a region being in contact with the silicon oxide film.

2. The active matrix type liquid crystal display device according to claim 1 , wherein a part of the oxide semiconductor layer further comprises tin.

3. The active matrix type liquid crystal display device according to claim 1 ,

wherein the oxide semiconductor layer has a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film, and

wherein the second oxide semiconductor film includes the crystalline region.

4. The active matrix type liquid crystal display device according to claim 3 , wherein the second oxide semiconductor film is thicker than the first oxide semiconductor film.

5. The active matrix type liquid crystal display device according to claim 1 , wherein the gate insulating layer has a first layer comprising silicon nitride and a second layer comprising silicon oxide over the first layer.

6. The active matrix type liquid crystal display device according to claim 1 , wherein the gate electrode has a stacked-layer structure using a metal material selected from molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium.

7. The active matrix type liquid crystal display device according to claim 1 , wherein each of the source electrode and the drain electrode has a stacked-layer structure using a metal material selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten.

8. The active matrix type liquid crystal display device according to claim 1 , wherein the input device is at least one of a keyboard, a mouse, and a touchpad.

9. An electronic device including the active matrix type liquid crystal display device according to claim 1 , the electronic device is selected from a laptop personal computer, a portable information terminal, an e-book reader, and a mobile phone.

10. A mobile phone including:

a housing;

the active matrix type liquid crystal display device according to claim 1 ;

a speaker;

a microphone; and

a camera,

wherein the active matrix type liquid crystal display device, the speaker, the microphone, and the camera are incorporated in the housing.

11. An active matrix type liquid crystal display device comprising:

a plurality of pixels, each pixel comprising a transistor and a liquid crystal element;

a driver circuit configured to input signals to the plurality of pixels; and

an input device operationally connected to the driver circuit,

wherein a frequency of inputting the signals from the driver circuit to the plurality of pixels when the input device is not operated is less than a frequency of inputting the signals from the driver circuit to the plurality of pixels when the input device is operated,

wherein the transistor comprises:

a gate electrode over a substrate;

a gate insulating layer over the gate electrode;

an oxide semiconductor layer over the gate insulating layer;

a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;

a silicon oxide film over the source electrode and the drain electrode; and

a silicon nitride film over the silicon oxide film,

wherein the oxide semiconductor layer comprises at least indium, gallium, and zinc,

wherein the oxide semiconductor layer includes a crystalline region with c-axis alignment, and

wherein the oxide semiconductor layer has a region being in contact with the silicon oxide film.

12. The active matrix type liquid crystal display device according to claim 11 , wherein a part of the oxide semiconductor layer further comprises tin.

13. The active matrix type liquid crystal display device according to claim 11 ,

wherein the oxide semiconductor layer has a first oxide semiconductor film and a second oxide semiconductor film over the first oxide semiconductor film, and

wherein the second oxide semiconductor film includes the crystalline region.

14. The active matrix type liquid crystal display device according to claim 13 , wherein the second oxide semiconductor film is thicker than the first oxide semiconductor film.

15. The active matrix type liquid crystal display device according to claim 11 , wherein the gate insulating layer has a first layer comprising silicon nitride and a second layer comprising silicon oxide over the first layer.

16. The active matrix type liquid crystal display device according to claim 11 , wherein the gate electrode has a stacked-layer structure using a metal material selected from molybdenum, titanium, chromium, tantalum, tungsten, aluminum, copper, neodymium, and scandium.

17. The active matrix type liquid crystal display device according to claim 11 , wherein each of the source electrode and the drain electrode has a stacked-layer structure using a metal material selected from aluminum, chromium, copper, tantalum, titanium, molybdenum, and tungsten.

18. The active matrix type liquid crystal display device according to claim 11 , wherein the input device is at least one of a keyboard, a mouse, and a touchpad.

19. An electronic device including the active matrix type liquid crystal display device according to claim 11 , the electronic device is selected from a laptop personal computer, a portable information terminal, an e-book reader, and a mobile phone.

20. A mobile phone including:

a housing;

the active matrix type liquid crystal display device according to claim 11 ;

a speaker;

a microphone; and

a camera,

wherein the active matrix type liquid crystal display device, the speaker, the microphone, and the camera are incorporated in the housing.

Priority Claims (1)
JP 2010-010250 · Jan 20, 2010 · national
Continuity (5)
Continuation 16143962 · Sep 27, 2018
Continuation 15259335 · Sep 8, 2016
Continuation 14527081 · Oct 29, 2014
Continuation 13005559 · Jan 13, 2011
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