Jet ablation die singulation systems and related methods
Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.
1. A method of singulating a plurality of semiconductor die, the method comprising:
forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate, the semiconductor substrate comprising a plurality of semiconductor die;
etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer; and
jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die following etching substantially through the thickness of the semiconductor substrate at a plurality of die streets.
2. The method of claim 1 , further comprising demounting the semiconductor substrate from a first tape and mounting the semiconductor substrate to a second tape.
3. The method of claim 2 , wherein demounting the semiconductor substrate from the first tape further comprises demounting after etching substantially through the thickness of the semiconductor substrate.
4. The method of claim 1 , further comprising mounting the semiconductor substrate to a first tape after etching substantially through a thickness of the semiconductor substrate.
5. The method of claim 1 , wherein jet ablating the layer of passivation material further comprises jet ablating from the second side of the semiconductor substrate.
6. The method of claim 1 , wherein jet ablating the layer of passivation material further comprises jet ablating from the first side of the semiconductor substrate.
7. The method of claim 1 , wherein etching substantially through the thickness of the semiconductor substrate further comprises plasma etching.
8. The method of claim 1 , wherein the thickness of the semiconductor substrate is less than 50 microns.
9. The method of claim 1 , wherein the thickness of the semiconductor substrate is 25 microns.
10. The method of claim 1 , wherein the back metal layer comprises a thickness between 1 micron to 15 microns.
11. The method of claim 1 , wherein the back metal layer comprises a thickness between 1 micron to 3 microns.
12. A method of singulating a plurality of semiconductor die, the method comprising:
forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate, the semiconductor substrate comprising a plurality of semiconductor die;
mounting the semiconductor substrate to a first tape;
etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer; and
jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die following etching substantially through the thickness of the semiconductor substrate at a plurality of die streets.
13. The method of claim 12 , further comprising demounting the semiconductor substrate from the first tape and mounting the semiconductor substrate to a second tape.
14. The method of claim 13 , wherein demounting the semiconductor substrate from the first tape further comprises demounting after etching substantially through the thickness of the semiconductor substrate.
15. The method of claim 12 , wherein jet ablating the layer of passivation material further comprises jet ablating from the second side of the semiconductor substrate.
16. The method of claim 12 , wherein jet ablating the layer of passivation material further comprises jet ablating from the first side of the semiconductor substrate.
17. The method of claim 12 , wherein etching substantially through the thickness of the semiconductor substrate further comprises plasma etching.
18. The method of claim 12 , wherein the thickness of the semiconductor substrate is less than 50 microns.
19. The method of claim 12 , wherein the thickness of the semiconductor substrate is 25 microns.
20. The method of claim 12 , wherein the back metal layer comprises a thickness between 1 micron to 15 microns.