Dual-MEMS device with temperature correction of MEMS output based on relative MEMS operation
In a high resolution temperature sensor, first and second MEMS resonators generate respective first and second clock signals and a locked-loop reference clock generator generates a reference clock signal having a frequency that is phase-locked to at least one of the first and second clock signals. A frequency-ratio engine within the MEMS temperature sensor oversamples at least one of the first and second clock signals with the reference clock signal to generate a ratio of the frequencies of the first and second clock signals.
1. A device comprising:
a first microelectromechanical systems (MEMS) structure having a body that is to move or deflect;
a second MEMS structure having a body that is to move or deflect; and
circuitry to generate temperature correction information dependent on the movement or deflection of each of the body of the first MEMS structure and the body of the second MEMS structure; and
circuitry to process a signal representing measurement of the movement or deflection of the body of the first MEMS structure, in dependence on the temperature correction information, to produce an output;
wherein the device comprises a first die and a second die mounted to the first die, wherein the first die carries the first MEMS structure and the second MEMS structure, wherein the second die carries the circuitry to generate and the circuitry to process, and wherein the device comprises a pin to carry the output.
2. A device comprising:
a first microelectromechanical systems (MEMS) structure having a body that is to move or deflect;
a second MEMS structure having a body that is to move or deflect; and
circuitry to generate temperature correction information dependent on the movement or deflection of each of the body of the first MEMS structure and the body of the second MEMS structure; and
circuitry to process a signal representing measurement of the movement or deflection of the body of the first MEMS structure, in dependence on the temperature correction information, to produce an output;
wherein the signal is a first signal, wherein the circuitry to generate comprises a frequency ratio engine that is to perform at least one of an oversampling function or a decimation function with respect to the first signal, in dependence on a second signal representing the movement or deflection of the body of the second MEMS structure.
3. The device of claim 2 , wherein the circuitry to process is use a polynomial to correct for non-linear variation of the signal with respect to temperature, in dependence on the temperature correction information, such that the output exhibits less non-linear variation with respect to temperature than does the first signal.
4. A device comprising:
a first microelectromechanical systems (MEMS) structure having a body that is to move or deflect;
a second MEMS structure having a body that is to move or deflect; and
circuitry to generate temperature correction information dependent on the movement or deflection of each of the body of the first MEMS structure and the body of the second MEMS structure; and
circuitry to process a signal representing measurement of the movement or deflection of the body of the first MEMS structure, in dependence on the temperature correction information, to produce an output;
circuitry to generate a sampling clock dependent on the movement or deflection of the body of the second MEMS structure; and
circuitry to sample the movement or deflection of the body of the first MEMS structure according to the sampling clock.
5. The device of claim 1 , wherein the first MEMS structure and the second MEMS structure are each resonators.
6. The device of claim 5 , wherein the body of the first MEMS resonator is to vibrate with a first resonant frequency, wherein the body of the second MEMS resonator is to vibrate with a second resonant frequency, and wherein the second MEMS frequency differs from the first MEMS frequency by at least one megahertz.
7. The device of claim 5 , wherein the body of the first MEMS resonator is to vibrate with a first resonant frequency, wherein the second MEMS resonator is to vibrate with a second resonant frequency, and wherein the first MEMS resonator and the second MEMS resonator are configured such that the first resonant frequency diverges monotonically with frequency from the second resonant frequency as a function of temperature.
8. The device of claim 1 , wherein the body of the first MEMS structure and the body of the second MEMS structure are each characterized by a respective temperature-dependent stiffness characteristic, and wherein the first MEMS structure and the second MEMS structure are configured such that a ratio of a parameter representing the movement or deflection for the body of the first MEMS structure to a parameter representing the movement or deflection for the body of the second MEMS structure varies monotonically over a temperature range of minus 45° C. to plus 105° C.
9. The device of claim 1 , wherein the second die comprises quantization circuitry that is to receive the signal and generate a quantized output, and wherein the circuitry to generate the temperature-correction information is to do so in dependence on the quantized output.
10. The device of claim 1 , wherein the second die comprises a decimating filter that is to receive the signal and generate a decimated output, and wherein the circuitry to generate the temperature-correction information is to do so in dependence on the decimated output.
11. A device comprising:
a first die having a first microelectromechanical systems (MEMS) structure having a body that is to move or deflect and a second MEMS structure having a body that is to move or deflect; and
a second die having circuitry to generate temperature correction information dependent on the movement or deflection of each of the body of the first MEMS structure and the body of the second MEMS structure and circuitry to process a first signal representing measurement of the movement or deflection of the body of the first MEMS structure in dependence on the temperature correction information;
wherein the device is to produce an output dependent on the processed signal; and
wherein the device further comprises circuitry to generate a sampling clock dependent on the movement or deflection of the body of the second MEMS structure, and circuitry to sample the movement or deflection of the body of the first MEMS structure according to the sampling clock.
12. The device of claim 11 , wherein the first MEMS structure and the second MEMS structure are each resonators.
13. The device of claim 12 , wherein the body of the first MEMS resonator is to vibrate with a first resonant frequency, wherein the body of the second MEMS resonator is to vibrate with a second resonant frequency, and wherein the second MEMS frequency differs from the first MEMS frequency by at least one megahertz.
14. The device of claim 12 , wherein the body of the first MEMS resonator is to vibrate with a first resonant frequency, wherein the body of the second MEMS resonator is to vibrate with a second resonant frequency, and wherein the first MEMS resonator and the second MEMS resonator are configured such that the first resonant frequency and the second resonant frequency monotonically diverge with temperature.
15. The device of claim 11 , wherein the body of the first MEMS structure and the body of the second MEMS structure are each characterized by a respective temperature-dependent stiffness characteristic, and wherein the first MEMS structure and the second MEMS structure are configured such that a ratio of a parameter representing the movement or deflection for the body of the first MEMS structure to a parameter representing the movement or deflection for the body of the second MEMS structure varies monotonically over a temperature range of minus 45° C. to plus 105° C.
16. A device comprising:
a first die having a first microelectromechanical systems (MEMS) structure having a body that is to move or deflect and a second MEMS structure having a body that is to move or deflect; and
a second die having circuitry to generate temperature correction information dependent on the movement or deflection of each of the body of the first MEMS structure and the body of the second MEMS structure and circuitry to process a first signal representing measurement of the movement or deflection of the body of the first MEMS structure in dependence on the temperature correction information;
wherein the device is to produce an output dependent on the processed signal; and
wherein the circuitry to generate the temperature correction information comprises a frequency ratio engine that is to perform at least one of an oversampling function or a decimation function with respect to the first signal, in dependence on a second signal representing the movement or deflection of the second MEMS structure.
17. A device comprising:
a first die having a first microelectromechanical systems (MEMS) structure having a body that is to move or deflect and a second MEMS structure having a body that is to move or deflect; and
a second die having circuitry to generate temperature correction information dependent on the movement or deflection of each of the body of the first MEMS structure and the body of the second MEMS structure and circuitry to process a first signal representing measurement of the movement or deflection of the body of the first MEMS structure in dependence on the temperature correction information;
wherein the device is to produce an output dependent on the processed signal; and
wherein the circuitry to process is use a polynomial to correct for non-linear variation of the first signal with respect to temperature, in dependence on the temperature correction information, such that the output exhibits less non-linear variation with respect to temperature than does the first signal.