Inorganic-infiltrated polymer hybrid thin film resists for advanced lithography
The present invention provides a method that utilizes an existing infrastructure such as atomic layer deposition or similar vapor-based deposition tool or metal salt solutions based infiltration to infiltrate certain metals or metal-based precursors into resist materials to enhance the performance of the resists for the advancement of lithography techniques.
1. A method of preparing metal-infiltrated resist material or metal oxide-infiltrated resist material for optical lithographic patterning, said method consisting essentially of:
Forming an organic thin film layer consisting of polymer as resist material for optical lithography on a substrate material, having a top surface opposite the substrate material;
infiltering a metal or a metal oxide into the organic thin film layer consisting of polymer to provide a metal-infiltrated resist material layer or a metal oxide-infiltrated resist material layer, wherein the metal-infiltrated resist material layer or the metal oxide-infiltrated resist material layer extends from the top surface towards the substrate material; and
patterning the metal-infiltrated resist material layer or the metal oxide-infiltrated resist material layer by exposure to radiation during optical lithography selected from the group consisting of electron beam lithography (EBL), ultraviolet (UV) lithography, deep ultraviolet (DUV) lithography and extreme ultraviolet (EUV) lithography followed by development to provide an optical lithographically patterned metal-infiltrated resist material layer or metal oxide-infiltrated resist material layer,
wherein infiltrating comprises vapor-phase infiltration by using atomic layer deposition tools, and wherein a maximum thickness of the metal-infiltrated resist material layer or the metal oxide-infiltrated resist material layer is 50 nm and the metal-infiltrated resist material layer or the metal oxide-infiltrated resist material layer has a thickness greater than about 1 nm.
2. The method according to claim 1 , wherein said metal comprises: Al, Zn, Sn, Ti, Zr, Hf, In, Sb, Co, Ni, Pd, W, Pt, Au, Cu, Ga, Zn, Cr, Fe, or Cs.
3. The method according to claim 1 , wherein said metal oxide is selected from the group consisting of but not limited to AlO x , ZnO x , SnO x , HfO x , TiO x , ZrO x , Ga 2 O x , InO x .
4. The method according to claim 1 , wherein said metal oxide is selected from the group consisting of Al 2 O 3 , ZnO, SiO 2 , SnO 2 , Ga 2 O 3 , HfO 2 , ZrO 2 , Nb 2 O 5 , and TiO 2 .
5. The method according to claim 1 , wherein the resist material is selected from the group consisting of: poly(methyl methacrylate) (PMMA) and similar acrylate based resist derivatives, ZEP series, CSAR series, polystyrene derivatives, polyvinylpyridine (PVP), poly(2-vinylpyridine) and poly(4-vinyl pyridine) derivatives, poly(methyl glutarimide) (PMGI), phenol formaldehyde resin (DNQ/Novolac), polyhydoxystyrene-based polymers, polyacrylonitrile, and polyimides.
6. The method according to claim 1 , wherein said vapor-phase infiltration uses 1-12 cycles, 1-8 cycles, 1-4 cycles, 4-8 cycles, or 2-6 cycles.
7. The method according to claim 6 , wherein said vapor-phase infiltration comprises contacting the resist material with the metal, the metal oxide, or a metal-based precursor for a total of 30-800 seconds, 30-500 seconds, 40-100 seconds, or 40-80 seconds.
8. The method according to claim 7 , wherein said metal is a metal-based precursor and is selected from the group consisting of trimethylaluminum (TMA), diethyl zinc (DEZ), titanium isopropoxide, trimethyl gallium, and Tetrakis(diethylamido)tin.
9. The method according to claim 1 , wherein said vapor-phase infiltration comprises contacting the resist material with water vapor for a total of 40-100 seconds or 40-80 seconds.
10. The method according to claim 1 , wherein said metal-infiltrated resist material has a thickness of greater than about 5 nm, greater than about 10 nm, greater than about 15 nm, greater than about 20 nm, greater than about 25 nm, greater than about 30 nm, or greater than about 35 nm.
11. The method according to claim 1 , wherein said metal-infiltrated resist material has a thickness of between about 5 nm and 50 nm, 5 nm and 40 nm, 10 nm and 50 nm, 10 nm and 40 nm, 20 nm and 40 nm, 1 nm and 20 nm, 10 nm and 20 nm, or 1 nm and 10 nm.
12. The method according to claim 1 , wherein said patterning comprises exposing the metal-infiltrated resist material to a radiation source that has a wavelength that is less than 500 nm, less than 400 nm, less than 300 nm, less than 200 nm, less than 100 nm, less than 50 nm, or less than 20 nm.
13. The method according to claim 1 , wherein the patterned metal-infiltrated resist material is used as a mask in an etching step to pattern the substrate material, wherein the patterned substrate material comprises nanostructures.
14. The method according to claim 13 , wherein the method provides an etch selectivity of greater than 10, 15, or 20.
15. The method according to claim 13 , wherein the nanostructures comprise an aspect ratio, said aspect ratio is greater than about 5, greater than about 10, greater than about 15, or greater than about 20.
16. The method according to claim 13 , wherein the nanostructures comprise an aspect ratio, said aspect ratio is between about 5 and 50, 10 and 50, 10 and 30, or 15 and 25.
17. The method according to claim 13 , wherein the nanostructures comprise a linewidth, wherein said linewidth is less than about 100 nm, less than about 50 nm, less than about 40 nm, less than about 35 nm, less than about 25 nm, less than 10 about nm, or less than about 5 nm.
18. The method according to claim 13 , wherein the nanostructures comprise a linewidth, wherein said linewidth is between about 5 nm and 50 nm, 10 nm and 50 nm, or between 15 and 25 nm.
19. The method according to claim 1 , further comprising: cryo-Si etching the patterned metal-infiltrated resist material to provide Si nanostructures having a linewidth of about 30 nm or less and an aspect ratio of 10-30.
20. The method according to claim 1 , wherein the infiltrated metal oxide is a doped metal oxide.
21. The method according to claim 1 further comprising: infiltrating a combination of at least two metals, a combination of at least two metal oxides, or a combination of at least two doped metal oxides into the resist material to provide the metal-infiltrated resist material.
22. The method according to claim 1 , wherein the EBL has an electron dose ranging from 50 μC/cm 2 to 7000 μC/cm 2 , wherein the UV lithography has a wavelength of 365 nm, wherein the DUV lithography has a wavelength range of from 248 nm to 193 nm, and wherein the EUV lithography has a wavelength of 13.5 nm.