Alignment apparatus and method of manufacturing semiconductor device
An alignment apparatus according to one embodiment, includes: a first and a second stage; a first and a second detector; a first and a second moving mechanism; and a controller. The first and second stages are configured to respectively hold a first and a second semiconductor substrate on which a first and a second alignment mark are respectively disposed. The first and second moving mechanisms are configured to respectively move the first and second stages relatively to each other. The controller is configured to perform the following (a), (b). (a) The controller control the detectors and the moving mechanisms to cause the first detector to detect the second alignment mark and to cause the second detector to detect the first alignment mark. (b) The controller calculate a position deviation between the substrates in accordance with results of the detections.
1. A method of manufacturing a semiconductor device, comprising:
loading a first semiconductor substrate having a first alignment mark onto a first stage, and loading a second semiconductor substrate having a second alignment mark onto a second stage;
detecting the second alignment mark by a first detector on the first stage, and detecting the first alignment mark by a second detector on the second stage;
aligning positions of the first and second semiconductor substrates in accordance with results of the detections; and
bonding the first and second semiconductor substrates,
wherein the first alignment mark has:
a first patterns arranged at a first pitch; and
a second patterns arranged at a second pitch different from the first pitch, and
wherein the second alignment mark has:
a third patterns arranged at a third pitch; and
a fourth patterns arranged at a fourth pitch different from the third pitch.
2. The method according to claim 1 ,
wherein the first patterns and the second patterns are arranged in parallel.
3. The method according to claim 1 ,
wherein the alignment of the positions includes:
calculating a first position where any of the first patterns and any of the second patterns correspond to each other, and calculating a second position where any of the third patterns and any of the fourth patterns correspond to each other; and
calculating a position deviation between the first and second semiconductor substrates in accordance with the first and second positions.
4. The method according to claim 3 ,
wherein one of the first patterns and one of the second patterns are arranged in line at the first position, and
wherein one of the third patterns and one of the fourth patterns are arranged in line at the second position.
5. The method according to claim 1 ,
wherein the detection of the first alignment mark includes rotating the first semiconductor substrate in accordance with an inclination of the first or second pattern.
6. The method according to claim 1 , further comprising:
aligning an axis of the first detector and an axis of the second detector before the detections of the first and second alignment marks.
7. The method according to claim 6 , further comprising:
after the alignment of the axes of the first and second detectors, relatively moving the first stage to a position on which the first detector detects the second alignment mark and the second detector detects the first alignment mark.
8. The method according to claim 7 , further comprising
calculating a position deviation between the first and second semiconductor substrates in accordance with the results and the relative movement amount of the first stage,
wherein the positions are aligned in accordance with the position deviation.
9. The method according to claim 1 , further comprising
detecting the first and second alignment marks by a third detector to perform overlay measurement after bonding the first and second semiconductor substrates.
10. A method of manufacturing a semiconductor device, comprising:
loading a first semiconductor substrate having a first alignment mark onto a first stage, and loading a second semiconductor substrate having a second alignment mark onto a second stage;
detecting the second alignment mark by a first detector on the first stage, and detecting the first alignment mark by a second detector on the second stage;
aligning positions of the first and second semiconductor substrates in accordance with results of the detections;
bonding the first and second semiconductor substrates; and
detecting the first and second alignment marks by a third detector to perform overlay measurement after bonding the first and second semiconductor substrates.
11. The method according to claim 10 , further comprising:
aligning an axis of the first detector and an axis of the second detector before the detections of the first and second alignment marks.
12. The method according to claim 10 , further comprising:
after the alignment of the axes of the first and second detectors, relatively moving the first stage to a position on which the first detector detects the second alignment mark and the second detector detects the first alignment mark.
13. The method according to claim 10 , further comprising
calculating a position deviation between the first and second semiconductor substrates in accordance with the results and the relative movement amount of the first stage,
wherein the positions are aligned in accordance with the position deviation.