High temperature micro-zone electrostatic chuck
Implementations described herein provide a substrate support assembly. The substrate support assembly has an electrostatic chuck having a workpiece supporting surface and a bottom surface. The substrate support assembly further includes a plurality of layers which has a thermal interface layer. The plurality of layers are disposed below the electrostatic chuck. A cooling base having a top surface, the top surface is disposed below the plurality of layers. A temperature differential across the thermal interface layer is about 150 degrees Celsius when the workpiece supporting surface of the electrostatic chuck is at a temperature of about 300 degrees Celsius.
1. A substrate support assembly, comprising:
an electrostatic chuck (ESC) having a workpiece supporting surface and a bottom surface;
a plurality of secondary heaters, each secondary heater defining a microzone wherein the secondary heaters are disposed in the ESC;
a plurality of layers which include a thermal interface layer, the plurality of layers disposed below the electrostatic chuck, wherein the plurality of layers further comprises:
a ceramic plate; and
a metal bond layer disposed between the electrostatic chuck and the ceramic plate, wherein the ceramic plate has a cavity having metallization on sidewalls and connecting to the metal bond layer on the ceramic plate;
a plurality of primary heaters having one or more primary heater zones; and
a cooling base having a top surface, the top surface disposed below the ceramic plate.
2. The substrate support assembly of claim 1 , wherein the number of microzones are an order of magnitude greater than the number or primary heater zones.
3. The substrate support assembly of claim 2 , wherein thermal interface layer has a thermal conductivity of about 0.2 W/mK to about 4 W/mK.
4. The substrate support assembly of claim 2 , wherein the thermal interface layer is configured to generate a temperature differential between 50° C. and 200° C. when a top surface of the thermal interface layer is exposed to a temperature of about 300° C.
5. The substrate support assembly of claim 2 , wherein the metal bond layer is an RF electrode and the metal bond layer is coupled to an RF power source.
6. The substrate support assembly of claim 2 , wherein the ceramic plate has a thermal coefficient of expansion that is greater than or equal to the thermal coefficient of expansion for the electrostatic chuck.
7. The substrate support assembly of claim 2 , wherein the thermal interface layer includes a glass or insulating layer.
8. The substrate support assembly of claim 2 , wherein the thermal interface layer has a top and a bottom, the thermal interface layer is an insulating bond which includes high temperature polymer and has a thermal conductivity of about 0.2 W/mK to about 4 W/mK.
9. The substrate support assembly of claim 2 , wherein the thermal interface layer has a thickness between about 0.25 mm and about 2.5 mm.
10. The substrate support assembly of claim 9 , wherein the thermal interface layer further comprises:
an upper surface; and
a lower surface, wherein a temperature drop from the upper surface to the lower surface is about 200° C. when the upper surface is exposed to a temperature of about 300° C.
11. The substrate support assembly of claim 2 , wherein a temperature differential across the thermal interface layer is about 250 degrees Celsius when the workpiece supporting surface of the electrostatic chuck is at a temperature of about 300 degrees Celsius.
12. The substrate support assembly of claim 2 wherein each mircrozone is in one and only one primary heater zone.
13. The substrate support assembly of claim 2 , wherein the ceramic plate has a plurality of metal inserts configured to accept a respective fastener.