Semiconductor nanoparticle, method for manufacturing same, and light emitting device

1. A method for manufacturing a semiconductor nanoparticle comprising:

performing a heat treatment of a first mixture containing a silver (Ag) salt, a first lithium (Li) salt, a salt containing at least one of indium (In) and gallium (Ga), a sulfur source, and an organic solvent,

wherein a ratio of a number of atoms of Li to a total number of atoms of Ag and Li in the first mixture is greater than 0 and less than 1, and

wherein the semiconductor nanoparticle has a composition in which a content of sulfur is 35 mol % to 55 mol %.

2. The method according to claim 1 , wherein the semiconductor nanoparticle has the composition in which a total content of silver (Ag) and lithium (Li) is 10 mol % to 30 mol %, and a total content of indium (In) and gallium (Ga) is 15 mol % to 35 mol %.

3. The method for manufacturing a semiconductor nanoparticle according to claim 1 , wherein the first mixture is heat-treated at a temperature in a range of 30° C. or more and less than 200° C. for 1 to 120 minutes and then further heat-treated at a temperature in a range of 200° C. or more and 350° C. or less.

4. A method for manufacturing a core-shell type semiconductor nanoparticle comprising: performing a heat treatment of a second mixture containing the semiconductor nanoparticle obtained by the method for manufacturing according to claim 1 , a second lithium salt, a compound containing a group 13 element, a simple substance of a group 16 element or a compound containing a group 16 element, and an organic solvent.