Liquid metal circuits and methods of making the same
A high-throughput method of manufacturing a liquid metal circuit may include applying a liquid metal to an alloying metal pattern on an elastic substrate to form the liquid metal circuit. The elastic substrate may have a surface area greater than 1 square inch. The liquid metal circuit may include a plurality of liquid metal circuits on the elastic substrate. Methods of using the liquid metal circuit are also described.
1. A high-throughput method of manufacturing a liquid metal circuit, the method comprising:
providing an alloying metal on a circuit pattern on a surface of an elastic substrate to form an alloying metal pattern on the elastic substrate;
submerging the elastic substrate having the alloying metal pattern into a liquid bath for a dwell time to alloy the liquid metal with the alloying metal pattern, wherein the liquid bath comprises a top layer of an oxide reducing agent and a bottom layer of a liquid metal in an oxide-free state, and wherein the alloying metal pattern contacts the oxide reducing agent before contacting the liquid metal; and
withdrawing the elastic substrate from the liquid bath at a removal speed to form the liquid metal circuit having the circuit pattern defined by the alloying metal pattern and a deposition height correlated with the removal speed,
wherein the liquid metal is not deposited on the elastic substrate at locations lacking the alloying metal pattern, and
wherein the liquid metal deposited on the alloying metal pattern contacts the reducing agent immediately prior to complete removal of the elastic substrate from the liquid bath.
2. The method of claim 1 , wherein providing the alloying metal comprises:
depositing the alloying metal on the circuit pattern on the surface of the elastic substrate.
3. The method of claim 1 comprising:
fabricating the circuit pattern from the alloying metal on the surface of the elastic substrate using photolithography, stencil printing, selective deposition, rolling, or contact printing.
4. The method of claim 1 comprising:
agitating the liquid bath when submerging the elastic substrate.
5. The method of claim 1 comprising:
positioning a microelectronic component proximate to the liquid metal circuit.
6. The method of claim 1 , wherein the removal speed is from 10 −1 to 10 3 mm/s.
7. The method of claim 1 , wherein the liquid metal circuit comprises:
a height up to 100 micrometers,
a width up to 500 micrometers, and
a height-to-width ratio from 0.1-100.
8. The method of claim 1 , wherein the liquid metal circuit has a height-to-width ratio from 0.1-100.
9. The method of claim 1 , wherein the liquid metal circuit has a height-to-width ratio from 0.1-1.
10. The method of claim 1 , wherein
the removal speed is from 10 −1 to 10 3 mm/s, and
the liquid metal circuit comprises a height up to 100 micrometers and a height-to-width ratio from 0.1-100.
11. The method of claim 1 , wherein the elastic substrate comprises a surface area greater than 1 square inch.
12. The method of claim 1 , wherein the elastic substrate comprises a plurality of the liquid metal circuits.
13. The method of claim 1 , wherein the alloying metal is copper, gold, platinum, palladium, tin, zinc, iridium, or any combinations thereof.
14. The method of claim 1 , wherein the liquid metal is gallium, indium, tin, or any combinations thereof.
15. The method of claim 1 , wherein the liquid metal is a gallium-indium alloy or a gallium-indium-tin alloy.
16. The method of claim 1 , wherein the reducing agent is potassium hydroxide, sodium hydroxide, hydrochloric acid, or any combinations thereof.
17. A high-throughput method of manufacturing a liquid metal circuit, the method comprising:
providing an alloying metal on a circuit pattern on a surface of an elastic substrate to form an alloying metal pattern on the elastic substrate, wherein the alloying metal is copper, gold, platinum, palladium, tin, zinc, iridium, or any combinations thereof;
submerging the elastic substrate having the alloying metal pattern into a liquid bath for a dwell time to alloy the liquid metal with the alloying metal pattern, wherein the liquid bath comprises a top layer of an oxide reducing agent and a bottom layer of a liquid metal in an oxide-free state, wherein the alloying metal pattern contacts the oxide reducing agent before contacting the liquid metal, wherein the reducing agent is potassium hydroxide, sodium hydroxide, hydrochloric acid, or any combinations thereof, and wherein the liquid metal is gallium, indium, tin, or any combinations thereof; and
withdrawing the elastic substrate from the liquid bath at a removal speed to form the liquid metal circuit having the circuit pattern defined by the alloying metal pattern and a deposition height correlated with the removal speed, wherein the removal speed is from 10 −1 to 10 3 mm/s, and the liquid metal circuit comprises a height up to 100 micrometers and a height-to-width ratio from 0.1-100,
wherein the liquid metal is not deposited on the elastic substrate at locations lacking the alloying metal pattern,
wherein the liquid metal deposited on the alloying metal pattern contacts the reducing agent immediately prior to complete removal of the elastic substrate from the liquid bath.