Image sensor device and manufacturing method thereof
A method includes forming a first photoresist layer on a front side of a device substrate and having first trenches spaced apart from each other. A first implantation process is performed using the first photoresist layer as a mask to form first isolation regions in the device substrate. A second photoresist layer is formed on the front side and has second trenches. A second implantation process is performed using the second photoresist layer as a mask to form second isolation regions in the device substrate and crossing over the first isolation regions. A third photoresist layer is formed on the front side and has third trenches spaced apart from each other. A third implantation process is performed using the third photoresist layer as a mask to form third isolation regions in the device substrate and crossing over the first isolation regions but spaced apart from the second isolation regions.
1. A method for manufacturing an image sensor device, comprising:
forming a first photoresist layer on a front side of a device substrate, wherein the first photoresist layer has first trenches spaced apart from each other;
performing a first implantation process using the first photoresist layer as a mask to form first isolation regions in the device substrate;
forming a second photoresist layer on the front side of the device substrate, wherein the second photoresist layer has second trenches spaced apart from each other;
performing a second implantation process using the second photoresist layer as a mask to form second isolation regions in the device substrate and crossing over the first isolation regions;
forming a third photoresist layer on the front side of the device substrate, wherein the third photoresist layer has third trenches spaced apart from each other; and
performing a third implantation process using the third photoresist layer as a mask to form third isolation regions in the device substrate and crossing over the first isolation regions but spaced apart from the second isolation regions.
2. The method of claim 1 , wherein the second trenches of the second photoresist layer has a first pitch, and the third trenches of the third photoresist layer has a second pitch substantially the same as the first pitch.
3. The method of claim 2 , wherein the first pitch is greater than about 1 micrometer.
4. The method of claim 2 , wherein the first trenches of the first photoresist layer has a third pitch greater than about 1 micrometer.
5. The method of claim 1 , wherein the second and third isolation regions are alternately arranged.
6. The method of claim 5 , wherein a pitch between adjacent two of the second and third isolation regions is less than about 1 micrometer.
7. The method of claim 1 , wherein each of the first trenches is formed with an aspect ratio of about 10:1 or greater.
8. The method of claim 1 , wherein the second isolation regions are substantially perpendicular to the first isolation regions.
9. The method of claim 1 , wherein the first, second, and third isolation regions define a plurality of pixel regions, and the method further comprises:
respectively forming pixels in the pixel regions.
10. A method for manufacturing an image sensor device, comprising:
performing a first implantation process to form first isolation regions in a device substrate, wherein the first isolation regions defines a plurality of first pixel regions connected to each other;
after performing the first implantation process, performing a second implantation process to form second isolation regions in the device substrate, wherein the second isolation regions crosses over the first isolation regions and cut the plurality of first pixel regions into a plurality of second pixel regions separated from each other;
after performing the second implantation process, performing a third implantation process to form third isolation regions in the device substrate, wherein the third isolation regions crosses over the first isolation regions and cut the plurality of second pixel regions into a plurality of third pixel regions separated from each other; and
forming pixels in the third pixel regions.
11. The method of claim 10 , wherein a width of each of the first isolation regions is substantially the same as a width of each of the second isolation region.
12. The method of claim 10 , wherein a width of each of the second isolation regions is greater than a width of each of the third isolation region.
13. The method of claim 10 , wherein the second pixel regions and the third pixel regions are alternately arranged.
14. The method of claim 10 , further comprising:
performing a lithography process using a pattern of a photomask to form a photoresist layer on the device substrate, wherein the photoresist layer has trenches spaced apart from each other, and the trenches does not expose the second isolation regions,
wherein the third implantation process is performed by using the photoresist layer with the trenches as a mask.