Transistor having resistive field plate
A transistor having: a semiconductor; a first electrode in contact with the semiconductor; a second electrode in contact with the semiconductor; and a control electrode, disposed between the first electrode and the second electrode, for controlling a flow of carriers in a channel in the semiconductor between the first electrode and the second electrode. A first electric field is produced in the channel in response to an electrical voltage applied between the first electrode and the second electrode. A field plate, comprising a resistive material, is disposed over the channel. A voltage source is connected across portions of the resistive field plate material for producing second electric field across such portions of the resistor, such second electric field being coupled into the channel to modify one or more peaks of the first electric field in the channel.
1. A transistor, comprising:
a semiconductor structure;
a first electrode in direct contact with the semiconductor structure;
a second electrode in direct contact with the semiconductor structure;
a control electrode, disposed between the first electrode and the second electrode, configured to control a flow of carriers in a channel in the semiconductor structure between the first electrode and the second electrode, wherein a first electric field is produced in the channel in response to an electrical voltage applied between the first electrode and the second electrode;
a field plate, comprising a resistive material, disposed over the channel, wherein the field plate is not in direct contact with the control electrode; and
a voltage source connected across portions of the resistive material configured to generate a second electric field across such portions of the resistive material, the second electric field being coupled into the channel to modify the first electric field in the channel,
wherein a first terminal of the voltage source is directly connected to a first end of the field plate and the second electrode,
wherein a second terminal of the voltage source is directly connected to a second end of the field plate.
2. The transistor recited in claim 1 including a dielectric layer disposed between the field plate and the channel.
3. The transistor recited in claim 2 wherein the dielectric layer is selected to prevent DC current from passing between the field plate and the channel.
4. The transistor recited in claim 3 wherein the field plate material is chosen to be of sufficiently high electrical resistance as to minimize power dissipated by the field plate.
5. A transistor, comprising:
a first semiconductor;
a second semiconductor being in contact with the first semiconductor;
a dielectric layer in direct contact with the second semiconductor;
a source electrode in direct contact with the second semiconductor;
a drain electrode in direct contact with the second semiconductor;
a gate electrode disposed between the source electrode and the drain electrode, configured to control a flow of carriers in a channel in the first semiconductor structure between the source electrode and the drain electrode, wherein an electric field profile is produced in the channel in response to electrical voltages applied to the source electrode, the drain electrode and the gate electrode, the electric field profile having one or more peak values;
a field plate, comprised of a resistive material, disposed over the channel in a region between the gate electrode and the drain electrode, the field plate being electrically connected on one end to the drain electrode, and on the other end configured to provide a field plate control terminal for the transistor, wherein the field plate is in direct contact with the dielectric layer and is not in direct contact with either the drain electrode or the gate electrode; and
a voltage source electrically connected to the field plate, such voltage source configured to generate a voltage to produce a gradually changing potential drop along the field plate and coupled into the transistor channel to modify the magnitude of one or more electric field peaks in the channel,
wherein a first terminal of the voltage source is directly connected to a first end of the field plate and the drain electrode,
wherein a second terminal of the voltage source is directly connected to a second end of the field plate.
6. The transistor recited in claim 5 wherein the dielectric layer is selected to prevent DC current from passing between the field plate and the channel.
7. The transistor recited in claim 6 wherein the field plate material is chosen to be of sufficiently high electrical resistivity as to minimize power dissipated by the field plate.
8. The transistor recited in claim 1 wherein the voltage source produces the voltage as a time varying voltage.
9. The transistor recited in claim 5 wherein the voltage source produces the voltage as a time varying voltage.
10. The transistor recited in claim 5 wherein the second end of the field plate is closer to the gate electrode than the first end of the field plate.
11. The transistor recited in claim 5 wherein the first semiconductor is gallium nitride.
12. The transistor recited in claim 11 wherein the second semiconductor is aluminum gallium nitride.
13. The transistor recited in claim 12 wherein the dielectric layer is silicon nitride.
14. The transistor recited in claim 13 wherein the channel comprises two-dimensional electron gas.
15. The transistor recited in claim 1 wherein the second end of the field plate is closer to the gate electrode than the first end of the field plate.
16. The transistor recited in claim 1 wherein the semiconductor structure comprises:
a first semiconductor; and
a second semiconductor directly on the first semiconductor,
wherein the channel is in the first semiconductor.
17. The transistor recited in claim 1 wherein the field plate is not in direct contact with either the first electrode or the second electrode.