Memory cells, methods of forming an array of two transistor-one capacitor memory cells, and methods used in fabricating integrated circuitry
A memory cell comprises first and second transistors laterally displaced relative one another. A capacitor is above the first and second transistors. The capacitor comprises a container-shape conductive first capacitor node electrically coupled with a first current node of the first transistor, a conductive second capacitor node electrically coupled with a first current node of the second transistor, and a capacitor dielectric material between the first capacitor node and the second capacitor node. The capacitor dielectric material extends across a top of the container-shape first capacitor node. Additional embodiments and aspects, including method, are disclosed.
1. A method of forming a memory cell, the method comprising:
etching a container opening through at least upper and lower masking materials to a location of a first transistor of the memory cell;
forming a container-shape electrode comprising bottom electrode material in the container opening;
forming insulator material over the bottom electrode material in the container opening;
forming top electrode material over the insulator material in the container opening;
removing the upper masking material to expose a portion of the insulator material above the lower masking material;
forming a spacer around the exposed portion of the insulator material;
using at least the spacer as an etch mask while etching a contact opening to a location of a second transistor of the memory cell; and
forming conductive material in the contact opening.
2. The method of claim 1 wherein the upper and lower masking materials are of different compositions relative one another.
3. The method of claim 1 wherein the upper masking material comprises carbon.
4. The method of claim 1 wherein the lower masking material comprises silicon nitride.
5. The method of claim 1 wherein the upper masking material comprises carbon and the lower masking material comprises silicon nitride.
6. The method of claim 1 comprising removing all remaining of the lower masking material.
7. The method of claim 6 wherein the removing all the remaining of the lower masking material occurs after forming the conductive material.
8. The method of claim 1 comprising removing all remaining of the spacer.
9. The method of claim 8 wherein the removing all the remaining of the spacer occurs after forming the conductive material.
10. The method of claim 1 comprising removing all remaining of the lower masking material and removing all remaining of the spacer.
11. The method of claim 10 wherein the removing all the remaining of the spacer and the removing all the remaining lower masking material occur after forming the conductive material.
12. A method of forming a memory cell, the method comprising:
etching a container opening through at least upper and lower masking materials to a location of a first transistor of the memory cell;
forming a container-shape electrode comprising bottom electrode material in the container opening;
forming insulator material over the bottom electrode material in the container opening;
forming top electrode material over the insulator material in the container opening;
removing the upper masking material to cause the top electrode material to project upwardly from an exposed uppermost surface of the lower masking material;
forming a spacer around the upwardly projecting top electrode material;
using at least the spacer as an etch mask while etching a contact opening to a location of a second transistor of the memory cell; and
forming conductive material in the contact opening.
13. The method of claim 12 wherein the upper and lower masking materials are of different compositions relative one another.
14. The method of claim 12 wherein the upper masking material comprises carbon.
15. The method of claim 12 wherein the lower masking material comprises silicon nitride.
16. The method of claim 12 wherein the upper masking material comprises carbon and the lower masking material comprises silicon nitride.
17. A method of forming a memory cell, the method comprising:
etching a container opening through masking material to a location of a first transistor of the memory cell;
forming a container-shape electrode comprising bottom electrode material in the container opening;
forming insulator material over the bottom electrode material in the container opening;
forming top electrode material over the insulator material in the container opening;
removing some of the masking material to expose a portion of the insulator material above the masking material;
forming a spacer around the exposed portion of the insulator material;
using at least the spacer as an etch mask while etching a contact opening to a location of a second transistor of the memory cell; and
forming conductive material in the contact opening.
18. The method of claim 17 comprising removing all remaining of the spacer.
19. The method of claim 18 wherein the removing all the remaining of the spacer occurs after forming the conductive material.
20. A method of forming a memory cell, the method comprising:
etching a first opening through masking material to a location of a first transistor of the memory cell;
forming bottom electrode material in the first opening;
forming insulator material over the bottom electrode material in the first opening;
forming top electrode material over the insulator material in the first opening;
removing some of the masking material to cause the top electrode material to project upwardly;
forming a spacer around the upwardly projecting top electrode material;
using at least the spacer as an etch mask while etching a second opening to a location of a second transistor of the memory cell;
forming conductive material in the second opening and directly against a top of the top electrode material that is in the first opening; and
removing the conductive material from being atop the top electrode material that is in the first opening.