Structure, methods for producing a structure and optoelectronic device

1. A structure comprising:

at least one semiconductor structure comprising at least one semiconductor nanocrystal; and

a high-density element configured to increase a density of the structure,

wherein a density of the high-density element is greater than a density of silica, and

wherein the structure is configured to emit light.

2. The structure according to claim 1 , wherein an average density per semiconductor nanocrystal of the structure is higher than an average density per semiconductor nanocrystal of the semiconductor structure without the high-density element.

3. The structure according to claim 1 , wherein the at least one semiconductor structure is bonded to a surface of a high-density particle.

4. The structure according to claim 3 , wherein the high-density particle is a luminescent phosphor particle or a non-emissive particle.

5. The structure according to claim 3 , wherein the at least one semiconductor structure is bonded to the surface of the high-density particle with inorganic linkers, organic linkers or non-covalent linking.

6. The structure according to claim 1 , wherein each semiconductor nanocrystal comprises an individual first layer surrounding the semiconductor nanocrystal.

7. The structure according to claim 6 , wherein the first layer comprises silica or a high-density oxide.

8. The structure according to claim 6 , wherein the first layer comprises at least two regions.

9. The structure according to claim 6 , wherein at least two semiconductor nanocrystals each comprising the first layer are aggregated and surrounded by a second layer.

10. The structure according to claim 9 , wherein the second layer comprises silica or a high-density oxide.

11. The structure according to claim 9 , wherein the second layer comprises a high-density oxide, and wherein a thickness of the second layer is greater than 0 nm and smaller than or equal to 100 nm.

12. The structure according to claim 9 , wherein the second layer comprises a high-density oxide, and wherein the second layer is in direct contact to the first layers.

13. The structure according to claim 6 , wherein the first layer comprises a high-density oxide, and wherein the first layer is in direct contact to the semiconductor nanocrystals.

14. An optoelectronic device comprising:

a semiconductor chip configured to emit a primary radiation; and

a conversion element configured to convert at least part of the primary radiation into a secondary radiation, wherein the conversion element comprises at least one structure according to claim 1 .

15. The optoelectronic device according to claim 14 , wherein the conversion element comprises a single layer of matrix material and at least two wavelength converting compounds with different energy emissions arranged in layers in the single layer of matrix material, wherein the wavelength converting compounds are arranged in order of their energy emission, wherein the wavelength converting compound with a lowest energy emission is arranged closest to the semiconductor chip, and wherein at least one of the wavelength converting compounds comprises the structure.

16. The optoelectronic device according to claim 14 , wherein the conversion element comprises a single layer of matrix material, a plurality of structures in the single layer of matrix material, a green phosphor in the single layer of matrix material and a red phosphor in the single layer of matrix material, and wherein the plurality of structures is arranged adjacent to the semiconductor chip, the red phosphor is arranged adjacent to the plurality of structures and the green phosphor is arranged adjacent to the red phosphor.

17. The optoelectronic device according to claim 14 , wherein the structure comprises semiconductor structures bonded to a surface of a high-density particle, and wherein the high-density particle is a luminescent phosphor particle.