IP Library Granted Patent US 10,965,278
Granted Patent B1
US 10,965,278 · App. 16/827,963 · Granted Mar 30, 2021

Cross-coupled high-speed, low power level shifter

Inventors: Santosh Mahadeo Narawade (Bangalore, IN); Jithin K (Bangalore, IN); Mohit Gupta (San Jose, CA)
Assignee: SiFive, Inc.
H03K3/356113H03K3/356182H03K19/018521
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Quick Facts
Patent No.
US 10,965,278
App. No.
16/827,963
Granted
Mar 30, 2021
Kind
B1
Abstract

Described is a high speed, low power level shifter circuit which includes a cross-coupled level shifter coupled to a sensing circuit. The sensing circuit turns off a cross-coupled node of a pair of cross-coupled nodes based on detecting that an input voltage has crossed a threshold voltage for a cross-coupled input transistor of a pair of cross-coupled input transistors, i.e. due to switching from a current logic level to an incoming logic level. Once the sensing circuit detects a threshold voltage crossing, a pull-up circuit pulls high a cross-coupled node and cross-coupled source transistor tied to the cross-coupled node. This turns off the cross-coupled source transistor and turns on another cross-coupled source transistor. Two parallel paths are now established to pull the cross-coupled node high, enabling a high-speed transition. The turning off of the cross-coupled source transistor also pulls the output to the incoming logic level.

Claims (58)

1. A cross-coupled high-speed, low power level shifter circuit comprising:

a cross-coupled level shifter circuit including a pair of input transistors, a pair of source transistors, a pair of cross-coupled legs connecting the pair of input transistors and the pair of source transistors, and a pair of cross-coupled nodes associated with the pair of cross-coupled legs; and

a sensing circuit, the sensing circuit configured to:

sense whether an input signal to an input transistor of the pair of input transistors crosses a threshold voltage; and

pull-up a cross-coupled node of the pair of cross-coupled nodes when the threshold voltage is at least met, wherein the cross-coupled node is a high impedance node,

wherein a source transistor of the pair of source transistors connected to the cross-coupled node is turned off and another source transistor of the pair of source transistors is turned on, establishing two current paths to the cross-coupled node and blocking off a transient current path, and

wherein the sensing circuit includes at least one voltage detector comprising:

a PMOS transistor; and

a NMOS transistor connected to the PMOS transistor,

wherein a gate of the PMOS transistor and a gate of the NMOS transistor is connected to the input signal.

2. The cross-coupled high-speed, low power level shifter circuit of claim 1 , wherein each input transistor of the pair of input transistors is a n-type metal-oxide-semiconductor (NMOS) transistor.

3. The cross-coupled high-speed, low power level shifter circuit of claim 2 , wherein each source transistor of the pair of source transistors is a p-type metal-oxide-semiconductor (PMOS) transistor.

4. The cross-coupled high-speed, low power level shifter circuit of claim 3 , wherein the sensing circuit further comprises a pair of sensing circuits, each sensing circuit connected to one input transistor of the pair of input transistors and one cross-coupled node of the pair of cross-coupled legs.

5. The cross-coupled high-speed, low power level shifter circuit of claim 4 , each sensing circuit further comprising:

one of the at least one voltage detector; and

a pull-up circuit connected to the one cross-coupled node of the pair of cross-coupled legs.

6. The cross-coupled high-speed, low power level shifter circuit of claim 5 , further comprising:

a buffer circuit connected to the output of the cross-coupled level shifter.

7. A device comprising:

a cross-coupled level shifter; and

a sensor connected to the cross-coupled level shifter, the sensor configured to:

track whether an input signal to an input transistor of a pair of input transistors of the cross-coupled level shifter crosses a threshold voltage; and

pull-up a high impedance node of the cross-coupled level shifter when the threshold voltage is crossed, wherein the high impedance node is one cross-coupled node of a pair of cross-coupled nodes associated with the pair of input transistors,

wherein a source transistor associated with the high impedance node is turned off and another source transistor is turned on, establishing two current paths to the cross-coupled node and blocking off a transient current path,

wherein the sensor includes at least one voltage detector comprising:

a PMOS transistor; and

a NMOS transistor connected to the PMOS transistor,

wherein a gate of the PMOS transistor and a gate of the NMOS transistor is connected to the input signal; and

wherein the source transistor and the another source transistor constitute a pair of source transistors for the cross-coupled level shifter.

8. The device claim 7 , wherein the cross-coupled level shifter comprises:

the pair of input transistors;

the pair of source transistors, and

a pair of cross-coupled legs connecting the pair of input transistors and the pair of source transistors, wherein the pair of cross-coupled nodes are associated with the pair of cross-coupled legs.

9. The device claim 8 , wherein each input transistor of the pair of input transistors is a n-type metal-oxide-semiconductor (NMOS) transistor.

10. The device of claim 8 , wherein each source transistor of the pair of source transistors is a p-type metal-oxide-semiconductor (PMOS) transistor.

11. The device of claim 8 , wherein the sensor further comprises a pair of sensing circuits, each sensing circuit connected to one input transistor of the pair of input transistors and one cross-coupled node of the pair of cross-coupled nodes.

12. The device of claim 11 , each sensing circuit further comprising:

one of the at least one voltage detector; and

a pull-up circuit connected to the one cross-coupled node of the pair of cross-coupled nodes.

13. The device of claim 8 , further comprising:

a buffer circuit connected to the output of the cross-coupled level shifter.

14. A method for cross-coupled level shifting, the method comprising:

switching an input signal received at a cross-coupled level shifter from a first logic level voltage to a second logic level voltage;

sensing that a threshold voltage for a cross-coupled input transistor of the cross-coupled level shifter is at least met;

pulling high a cross-coupled node of the cross-coupled level shifter unconnected to the cross-coupled input transistor;

switching off a cross-coupled source transistor connected to the cross-coupled node;

establishing parallel current paths for the cross-coupled node unconnected to the cross-coupled input transistor; and

pulling an output of the cross-coupled level shifter to a voltage level representative of the second logic level voltage,

wherein the sensing further comprising:

coupling a n-type metal-oxide-semiconductor (NMOS) transistor to a p-type metal-oxide-semiconductor (PMOS) transistor and connecting gates of the NMOS transistor and the PMOS transistor to the input signal.

15. The method of claim 14 , the method comprising:

switching on another cross-coupled source transistor to establish the parallel current paths.

16. The method of claim 14 , the method comprising:

buffering the output to mitigate circuit loading.

17. The method of claim 14 , the method comprising:

coupling a pair of cross-coupled input transistors with a pair of cross-coupled source transistors via a pair of cross-coupled legs, wherein the pair of cross-coupled nodes are associated with the pair of cross-coupled legs.

18. The method of claim 17 , wherein each cross-coupled input transistor of the pair of cross-coupled input transistors is a n-type metal-oxide-semiconductor (NMOS) transistor.

19. The method of claim 17 , wherein each cross-coupled source transistor of the pair of cross-coupled source transistors is a p-type metal-oxide-semiconductor (PMOS) transistor.

Assignments (5)
CHANGE OF NAME Recorded Apr 25, 2023
From: OPEN-SILICON, INC.
To: ALPHAWAVE SEMI, INC.
Reel/Frame 063440/0132 →
SECURITY INTEREST Recorded Nov 8, 2022
From: OPEN-SILICON, INC.
To: BANK OF MONTREAL
Reel/Frame 061698/0355 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 25, 2022
From: ALPHAWAVE HOLDINGS CORP.
To: OPEN-SILICON, INC.
Reel/Frame 061532/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 24, 2022
From: SIFIVE, INC.
To: ALPHAWAVE HOLDINGS CORP.
Reel/Frame 061516/0188 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 12, 2020
From: NARAWADE, SANTOSH MAHADEO; K, JITHIN; GUPTA, MOHIT
To: SIFIVE, INC.
Reel/Frame 052929/0324 →
Cited By (1)
US 12,386,405