Wide frequency range step size programmability for delay-locked loops using variable bias voltage generation

1. A delay-locked loop comprising:

a frontend circuit configured to output a control voltage based on an input clock and a feedback clock; and

a delay line circuit connected to the frontend circuit, the delay line circuit configured to:

generate a bias voltage based on the control voltage and a step size, wherein the bias voltage is variable based on the step size; and

apply at least one level of delay on the input clock based on the bias voltage to generate an output clock, the feedback clock being based on the output clock;

the delay line circuit comprising a bias generation circuit configured to:

receive the step size and the control voltage; and

turn on a number of transistors in a first set of transistors and turn on a complementary number of transistors in a second set of transistors to generate a source-to-gate voltage,

wherein a set of stacked inverters is connected to an inverted step size and the second set of transistors;

wherein the input clock is aligned with the feedback clock by delaying the phase of the output clock until phase lock.

2. The delay-locked loop of claim 1 , the delay line circuit further comprises:

a bias generation circuit configured to:

turn on a number of transistors at a third set of transistors based on the source-to-gate voltage to generate the bias voltage,

wherein a number of transistors in the first set, the second set, and the third set are defined by a number of selectable step sizes.

3. The delay-locked loop of claim 2 , the bias generation circuit wherein:

the first set of transistors is a stacked set of P-type metal-oxide-semiconductor (PMOS) transistors arranged in parallel between a supply voltage and a transistor drain, the first set of transistors connected to the step size;

the second set of transistors is a stacked set of PMOS transistors arranged in parallel between the supply voltage and the transistor drain, the second set of transistors connected to an inverted step size; and

the third set of transistors is a stacked set PMOS transistors arranged in parallel between the supply voltage and the transistor drain, the third set of transistors connected to the first set of transistors and the second set of transistors.

4. The delay-locked loop of claim 3 , the bias generation circuit further comprises:

a first PMOS transistor connected to the third set of transistors for outputting the bias voltage to the fine delay circuit; and

a second PMOS transistor connected to the third set of transistors for outputting the bias voltage to the coarse delay circuit.

5. The delay-locked loop of claim 3 , the frontend circuit further comprises:

a phase detector configured to output a difference signal based on the input clock with the feedback clock; and

a low pass filter connected to the phase detector, the low pass filter configured to output the control voltage based on the difference signal.

6. A method comprising:

generating a control voltage from detected phase differences between an input clock and a feedback clock;

generating a bias voltage based on selection of a step size and the control voltage, wherein the generating further including:

turning on a number of transistors in a first set of stacked transistors using the step size and turning on a complementary number of transistors in a second set of stacked transistors to generate a source-to-gate voltage using an inverted step size and wherein a number of transistors in the first set and the second set are defined by a number of selectable step sizes;

applying at least one delay to the input clock based on the bias voltage, wherein the applying further including:

applying a stack of inverters to the second set of transistors and to the step size to generate the inverted step size; and

generating the feedback clock from the output clock.

7. The method of claim 6 , wherein the generating further comprises turning on a number of transistors in a third set of stacked transistors to generate the bias voltage.

8. The method of claim 6 , wherein the applying further comprises:

applying a stack of inverters to the step size to generate the inverted step size.

9. A device comprising:

a detector circuit configured to output a phase difference voltage based on an input clock and a feedback clock;

an adjustable bias voltage generation circuit connected to the detector circuit, the adjustable bias voltage generation circuit configured to:

receive selection of a step size; and

set an adjustable bias voltage based on the control voltage and the step size,

wherein the adjustable bias voltage generation circuit includes:

a first set of stacked transistors connected to the step size;

a second set of stacked transistors connected to an inverted step size; and

a set of stacked inverters connected to the inverted step size and the second set of transistors; and

a delay circuit connected to the adjustable bias voltage generation circuit, the delay circuit configured to apply at least one level of delay based on a bias voltage to the input clock to generate an output clock, the feedback clock being based on the output clock,

wherein the input clock is aligned with the feedback clock by delaying the phase of the output clock until phase lock.

10. The device of claim 9 , the adjustable bias voltage generation circuit further comprises:

the first set of stacked transistors arranged in parallel between a supply voltage and a transistor drain;

the second set of transistors arranged in parallel between the supply voltage and the transistor drain; and

a third set of stacked transistors which are arranged in parallel between the supply voltage and the transistor drain, the third set of stacked transistors connected to the first set of stacked transistors and the second set of stacked transistors,

wherein the adjustable bias voltage generation circuit further configured to:

turn on a number of transistors in the first set of stacked transistors;

turn on a complementary number of transistors in the second set of stacked transistors to generate a source-to-gate voltage; and

turn on a number of transistors in the third set of stacked transistors based on the source-to-gate voltage to generate the bias voltage,

wherein a number of transistors in the first set, the second set, and the third set are defined by a number of selectable step sizes.

11. The delay-locked loop of claim 2 , the adjustable bias voltage generation circuit further comprises:

a first PMOS transistor connected to the third set of stacked transistors for outputting the bias voltage to the fine delay circuit; and

a second PMOS transistor connected to the third set of stacked transistors for outputting the bias voltage to the coarse delay circuit.

12. The delay-locked loop of claim 2 , the delay line circuit further comprises:

a fine delay circuit configured to apply a fine delay to the input clock based on the step size.

13. The delay-locked loop of claim 12 , the delay line circuit further comprises:

a coarse delay circuit configured to apply a coarse delay to a fine delayed input clock based on the step size.

14. The method of claim 6 , wherein the applying further comprises:

applying a fine delay to the input clock associated with the step size.

15. The method of claim 14 , wherein the applying further comprises:

applying a coarse delay to a fine delayed input clock associated with the step size.

16. The device of claim 9 , the delay circuit further comprises:

a fine delay circuit configured to apply a fine delay to the input clock based on the step size.

17. The device of claim 16 , the delay circuit further comprises:

a coarse delay circuit configured to apply a coarse delay to a fine delayed input clock based on the step size.