IP Library Granted Patent US 11,928,042
Granted Patent B2
US 11,928,042 · App. 16/827,974 · Granted Mar 12, 2024

Initialization and power fail isolation of a memory module in a system

Inventors: Dat T. Le (Tigard, OR); George Vergis (Portland, OR)
Assignee: Intel Corporation
G06F11/3058G06F1/30G06F11/0772G06F11/0787G06F11/3037G06F11/327
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Quick Facts
Patent No.
US 11,928,042
App. No.
16/827,974
Granted
Mar 12, 2024
Kind
B2
Abstract

A method and apparatus to detect, initialize and isolate a non-operating memory module in a system without physically removing the memory module from the system is provided. The memory module includes a power management integrated circuit to provide power to a memory integrated circuit on the memory module. During initialization of the memory module, if an error log stored in a non-volatile memory in the memory module indicates a fatal error condition from a prior power cycle, the memory module is electrically isolated.

Claims (34)

1. A memory module comprising:

a memory integrated circuit; and

a power management integrated circuit communicatively coupled to the memory integrated circuit, the power management integrated circuit including a voltage regulator and

a non-volatile memory to store a power fail status of the voltage regulator from a prior power cycle, the power management integrated circuit to electrically isolate the memory module dependent on the power fail status of the voltage regulator.

2. The memory module of claim 1 , further comprising:

a sideband bus to communicatively couple the power management integrated circuit to a memory controller, the memory controller to access the power fail status from the prior power cycle via the sideband bus.

3. The memory module of claim 2 , wherein the power management integrated circuit to float a tri-state power good signal coupled to the memory controller to electrically isolate the memory module if the power fail status is a fatal error.

4. The memory module of claim 2 , wherein the voltage regulator to supply power on a power rail to the memory integrated circuit in response to an enable power request received via the sideband bus from the memory controller if the power fail status is not a fatal error.

5. The memory module of claim 2 , wherein a failure threshold for one or more of over temperature, over current, over voltage, or under voltage is configured in the power management integrated circuit.

6. The memory module of claim 2 , wherein the power management integrated circuit to float a tri-state power good signal coupled to the memory controller to electrically isolate the memory module if the power fail status is good and the power fail status of another memory module coupled to the tri-state power good signal is a fatal error.

7. The memory module of claim 2 , wherein the memory module is a dual inline memory module.

8. A memory controller comprising:

Input/Output circuitry to exchange signals on signal lines between the memory controller and a memory module;

a sideband bus; and

a memory module initialization controller to communicate with the memory module via the sideband bus, the memory module initialization controller to read a power fail status of a voltage regulator in the memory module from a prior power cycle from one or more error log registers in the memory module and to electrically isolate the memory module dependent on the power fail status of the voltage regulator.

9. The memory controller of claim 8 , wherein the memory module to float a tri-state power good signal coupled to the memory controller to electrically isolate the memory module.

10. The memory controller of claim 8 , wherein the voltage regulator to supply power on a power rail to a memory integrated circuit on the memory module in response to an enable power request received via the sideband bus from the memory controller if the power fail status is not a fatal error.

11. The memory controller of claim 8 , wherein the memory module initialization controller to configure a failure threshold for one or more of over temperature, over current, over voltage, or under voltage in the memory module.

12. The memory controller of claim 8 , wherein the memory module to float a tri-state power good signal coupled to the memory controller to electrically isolate the memory module if the power fail status is good and the power fail status of another memory module coupled to the tri-state power good signal is a fatal error.

13. A system comprising:

a memory controller; and

a memory module, the memory module comprising:

a memory integrated circuit; and

a power management integrated circuit communicatively coupled to the memory integrated circuit, the power management integrated circuit including a voltage regulator and

a non-volatile memory to store a power fail status of the voltage regulator from a prior power cycle, the power management integrated circuit to electrically isolate the memory module dependent on the power fail status of the voltage regulator.

14. The system of claim 13 , further comprising:

a sideband bus to communicatively couple the power management integrated circuit to the memory controller, the memory controller to access the power fail status from the prior power cycle via the sideband bus.

15. The system of claim 14 , wherein the power management integrated circuit to float a tri-state power good signal coupled to the memory controller to electrically isolate the memory module if the power fail status is a fatal error.

16. The system of claim 14 , wherein the voltage regulator to supply power on a power rail to the memory integrated circuit in response to an enable power request received via the sideband bus from the memory controller if the power fail status is not a fatal error.

17. The system of claim 14 , wherein a failure threshold for one or more of over temperature, over current, over voltage, or under voltage is configured in the power management integrated circuit.

18. The system of claim 14 , wherein the power management integrated circuit to float a tri-state power good signal coupled to the memory controller to electrically isolate the memory module if the power fail status is good and the power fail status of another memory module coupled to the tri-state power good signal is a fatal error.

19. The system of claim 14 , wherein the memory module is a dual inline memory module.

20. The system of claim 14 , further comprising one or more of:

a display communicatively coupled to a processor to display data stored in the memory module.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 17, 2025
From: INTEL CORPORATION
To: SK HYNIX NAND PRODUCT SOLUTIONS CORP. (DBA SOLIDIGM)
Reel/Frame 072851/0056 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 3, 2020
From: LE, DAT T.; VERGIS, GEORGE
To: INTEL CORPORATION
Reel/Frame 052820/0180 →
Continuity (1)
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