Semiconductor device, radio-frequency circuit, and communication apparatus

1. A semiconductor device comprising:

a base;

a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including a plurality of first switches; and

an amplifier unit disposed on the base, the amplifier unit including a plurality of amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit,

wherein in a plan view of the base, the amplifier unit surrounds three sides of the first switching unit.

2. A radio-frequency circuit comprising:

a substrate having a first major side and a second major side;

a semiconductor device comprising:

a base;

a first switching unit disposed on the base, the first switching unit having a substantially rectangular shape and including a plurality of first switches; and

an amplifier unit disposed on the base, the amplifier unit including a plurality of amplifier circuits to which a radio-frequency signal is inputted after passing through the first switching unit,

wherein in a plan view of the base, the first switching unit has four edges including a first edge, a second edge orthogonal to the first edge, and a third edge parallel to the first edge and orthogonal to the second edge, the amplifier unit includes a first region extending along the first edge, a second region extending along the second region, and a third region extending along the third edge, and at least one of the plurality of amplifier circuits is disposed in each of the first region, the second region, and the third region, the semiconductor device being disposed over the first major side of the substrate or inside the substrate;

a first matching circuit unit disposed over the second major side of the substrate, the first matching circuit unit including a plurality of first matching circuits;

a filtering unit disposed at a position over the second major side of the substrate and closer to an outer side portion of the substrate than the first matching circuit unit in a plan view, the filtering unit including at least one filter; and

a second matching circuit unit disposed at a position over the second major side of the substrate and closer to the outer side portion of the substrate than the filtering unit in a plan view, the second matching circuit unit including at least one second matching circuit,

wherein the radio-frequency signal passes through the first switching unit, the first matching circuit unit, the filtering unit, the second matching circuit unit, and the amplifier unit in this order, and

wherein in a plan view of the second major side, a distance between a center of the semiconductor device and the first matching circuit unit is shorter than a distance between the center of the semiconductor device and the filtering unit, and the distance between the center of the semiconductor device and the first matching circuit unit is shorter than a distance between the center of the semiconductor device and the second matching circuit unit.

3. The radio-frequency circuit according to claim 2 ,

wherein in a plan view of the second major side, the distance between the center of the semiconductor device and the filtering unit is shorter than the distance between the center of the semiconductor device and the second matching circuit unit.

4. The radio-frequency circuit according to claim 2 ,

wherein the semiconductor device includes

a third major side and a fourth major side, the third and fourth major sides being parallel to the second major side and opposite to each other, the fourth major side being closer to the second major side than the third major side, and

a first terminal and a second terminal, the first terminal and the second terminal being disposed on the fourth major side,

wherein the first terminal is connected to the first switching unit, and connected to the first matching circuit unit,

wherein the second terminal is connected to the amplifier unit, and connected to the second matching circuit unit, and

wherein in a plan view of the fourth major side, a distance between the center of the semiconductor device and the first terminal is shorter than a distance between the center of the semiconductor device and the second terminal.

5. The radio-frequency circuit according to claim 4 ,

wherein the semiconductor device further includes

a second switching unit disposed on the base, the second switching unit including a plurality of second switches to which the radio-frequency signal is inputted after passing through the amplifier unit,

a third switching unit disposed on the base, the third switching unit including a plurality of third switches to which the radio-frequency signal is inputted after passing through the filtering unit, the plurality of third switches each outputting the inputted radio-frequency signal to the second matching circuit unit, and

a third terminal disposed on the fourth major side,

wherein the third terminal is connected to the third switching unit, and connected to the second matching circuit unit, and

wherein in a plan view of the fourth major side, a distance between the center of the semiconductor device and the third terminal is shorter than the distance between the center of the semiconductor device and the second terminal.

6. The radio-frequency circuit according to claim 2 ,

wherein a ground pattern is disposed inside the substrate, and

wherein the ground pattern is positioned to overlap the second matching circuit unit in a plan view, and is not disposed within a region located closer to the second major side than a position corresponding to substantially one-half of a thickness of the substrate.

7. The radio-frequency circuit according to claim 2 ,

wherein the second matching circuit unit includes a first electrode and a second electrode, the second electrode being located farther from the filter than the first electrode, and

wherein the second electrode is connected to the filter.

8. The radio-frequency circuit according to claim 2 ,

wherein among the first switching unit, the first matching circuit unit, the filtering unit, the second matching circuit unit, and the amplifier unit,

the first matching circuit unit, the filtering unit, and the second matching circuit unit are disposed over the second major side, and

the first switching unit, and the amplifier unit are disposed over the first major side.

9. The radio-frequency circuit according to claim 2 ,

wherein the first matching circuit unit includes a first inductor and a second inductor,

wherein the first inductor and the second inductor are disposed adjacent to each other over the second major side,

wherein the first inductor is mounted over the second major side with a coil axis of the first inductor being parallel to the second major side, and

wherein the second inductor is mounted over the second major side with a coil axis of the second inductor being perpendicular to the second major side.

10. The radio-frequency circuit according to claim 2 ,

wherein the semiconductor device includes a digital circuit component,

wherein the substrate includes

a first ground pattern to which an analog circuit component is connected, and

a second ground pattern to which the digital circuit component is connected, and

wherein the first ground pattern and the second ground pattern are connected only by a conductor connected to a ground terminal.

11. The radio-frequency circuit according to claim 2 ,

wherein the substrate includes a plurality of ground patterns, the plurality of ground patterns being connected only by a conductor connected to a ground terminal, and

wherein each of the plurality of amplifier circuits is connected to a different one of the plurality of ground patterns.

12. A communication apparatus comprising:

a radio-frequency integrated circuit that configured to process a radio-frequency signal sent and received by an antenna element; and

the radio-frequency circuit according to claim 2 , the radio-frequency circuit transmitting the radio-frequency signal between the antenna element and the radio-frequency integrated circuit.

13. The radio-frequency circuit according to claim 3 ,

wherein the semiconductor device includes

a third major side and a fourth major side, the third and fourth major sides being parallel to the second major side and opposite to each other, the fourth major side being closer to the second major side than the third major side, and

a first terminal and a second terminal, the first terminal and the second terminal being disposed on the fourth major side,

wherein the first terminal is connected to the first switching unit, and connected to the first matching circuit unit,

wherein the second terminal is connected to the amplifier unit, and connected to the second matching circuit unit, and

wherein in a plan view of the fourth major side, a distance between the center of the semiconductor device and the first terminal is shorter than a distance between the center of the semiconductor device and the second terminal.

14. The radio-frequency circuit according to claim 3 ,

wherein a ground pattern is disposed inside the substrate, and

wherein the ground pattern is positioned to overlap the second matching circuit unit in a plan view, and is not disposed within a region located closer to the second major side than a position corresponding to substantially one-half of a thickness of the substrate.

15. The radio-frequency circuit according to claim 4 ,

wherein a ground pattern is disposed inside the substrate, and

wherein the ground pattern is positioned to overlap the second matching circuit unit in a plan view, and is not disposed within a region located closer to the second major side than a position corresponding to substantially one-half of a thickness of the substrate.

16. The radio-frequency circuit according to claim 5 ,

wherein a ground pattern is disposed inside the substrate, and

wherein the ground pattern is positioned to overlap the second matching circuit unit in a plan view, and is not disposed within a region located closer to the second major side than a position corresponding to substantially one-half of a thickness of the substrate.

17. The radio-frequency circuit according to claim 3 ,

wherein the second matching circuit unit includes a first electrode and a second electrode, the second electrode being located farther from the filter than the first electrode, and

wherein the second electrode is connected to the filter.

18. The radio-frequency circuit according to claim 4 ,

wherein the second matching circuit unit includes a first electrode and a second electrode, the second electrode being located farther from the filter than the first electrode, and

wherein the second electrode is connected to the filter.

19. The radio-frequency circuit according to claim 5 ,

wherein the second matching circuit unit includes a first electrode and a second electrode, the second electrode being located farther from the filter than the first electrode, and

wherein the second electrode is connected to the filter.

20. The radio-frequency circuit according to claim 6 ,

wherein the second matching circuit unit includes a first electrode and a second electrode, the second electrode being located farther from the filter than the first electrode, and

wherein the second electrode is connected to the filter.