IP Library Granted Patent US 11,726,233
Granted Patent B2
US 11,726,233 · App. 16/835,302 · Granted Aug 15, 2023

Method of making a metamaterial device

Inventors: Urcan Guler (West Lafayette, IN); Alexander V. Kildishev (West Lafayette, IN); Krishnakali Chaudhury (West Lafayette, IN); Shaimaa Ibrahim Azzam (West Lafayette, IN); Esteban E. Marinero-Caceres (West Lafayette, IN); Harsha Reddy (West Lafayette, IN); Alexandra Boltasseva (West Lafayette, IN); Vladimir M. Shalaev (West Lafayette, IN)
Assignee: Purdue Research Foundation
G02B1/002G01N21/8422B82Y20/00B82Y30/00B82Y40/00G01N2021/8427
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 11,726,233
App. No.
16/835,302
Granted
Aug 15, 2023
Kind
B2
Abstract

An optical sensor system, comprising refractory plasmonic elements that can withstand temperatures exceeding 2500° C. in chemically aggressive and harsh environments that impose stress, strain and vibrations. A plasmonic metamaterial or metasurface, engineered to have a specific spectral and angular response, exhibits optical reflection characteristics that are altered by varying physical environmental conditions including but not limited to temperature, surface chemistry or elastic stress, strain and other types of mechanical load. The metamaterial or metasurface comprises a set of ultra-thin structured layers with a total thickness of less than tens of microns that can be deployed onto surfaces of devices operating in harsh environmental conditions. The top interface of the metamaterial or metasurface is illuminated with a light source, either through free space or via an optical fiber, and the reflected signal is detected employing remote detectors.

Claims (26)

1. A method of making a metamaterial device comprising:

forming a spacer over a base, wherein the base comprises at least one of ZrN, HfN, or TiN;

forming a plasmonic nanostructure over the spacer, wherein the plasmonic nanostructure comprises at least one of ZrN, HfN, or TiN;

wherein a thickness of the spacer is configured to be less than a wavelength of an incident light; and

wherein a thickness of the base is configured to be larger than the equivalent of a skin depth of the incident light in the base.

2. The method of claim 1 , wherein the spacer comprises at least one of SiN x , Al 2 O 3 , AlN, BN, SiO 2 , HfO 2 , HFSiO x , HFSiON, ZrO 2 , or La 2 O 3 .

3. The method of claim 1 , wherein the thickness of the base ranges from the equivalent of 2 skin depths to 3 skin depths of the incident light in the base.

4. The method of claim 1 , wherein the plasmonic nanostructure comprises a first ratio ranging from 10 −3 to 10, wherein the first ratio comprises a ratio of height over width.

5. The method of claim 1 , wherein a height of the plasmonic nanostructure ranges from approximately 1 nanometer (nm) to 300 nm, and a width of the plasmonic nanostructure ranges from approximately 30 nm to 1000 nm.

6. A method of making a metamaterial device comprising:

forming a spacer over a base;

forming a plasmonic nanostructure over the spacer;

wherein a thickness of the spacer is configured to be less than a wavelength of an incident light;

wherein a thickness of the base is configured to be larger than the equivalent of a skin depth of the incident light in the base; and

wherein the plasmonic nanostructure comprises a first ratio ranging from 10 −3 to 10, wherein the first ratio comprises a ratio of height over width.

7. The metamaterial device of claim 6 , wherein a height of the plasmonic nanostructure ranges from approximately 1 nanometer (nm) to 300 nm, and a width of the plasmonic nanostructure ranges from approximately 30 nm to 1000 nm.

8. A method of making a metamaterial device comprising:

forming a spacer over a base; and

forming a plasmonic nanostructure over the spacer;

wherein a thickness of the spacer is configured to be less than a wavelength of an incidental incident light;

wherein a thickness of the base is configured to be larger than the equivalent of a skin depth of the incident light in the base.

9. The method of claim 8 , wherein the spacer comprises at least one of SiN x , Al 2 O 3 , AlN, BN, SiO 2 , HfO 2 , HFSiO x , HFSiON, ZrO 2 , or La 2 O 3 .

10. The method of claim 8 , wherein the thickness of the base ranges from the equivalent of 2 skin depths to 3 skin depths of the incident light in the base.

11. The method of claim 8 , wherein the base comprises at least one of ZrN, HfN, or TiN.

12. The method of claim 8 , wherein a height of the plasmonic nanostructure ranges from approximately 1 nanometer (nm) to 300 nm, and a width of the plasmonic nanostructure ranges from approximately 30 nm to 1000 nm.

13. The method of claim 8 , wherein the plasmonic nanostructure comprises at least one of ZrN, HfN, or TiN.

Assignments (1)
CONFIRMATORY LICENSE Recorded Jun 23, 2020
From: PURDUE UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 053010/0629 →
Continuity (4)
Continuation 15978548 · May 14, 2018
Provisional Application 62505427 · May 12, 2017
Related Publication 20210302623A1 · Sep 30, 2021
Related Publication 20220397702A9 · Dec 15, 2022