IP Library Granted Patent US 11,024,334
Granted Patent B2
US 11,024,334 · App. 16/835,770 · Granted Jun 1, 2021

High density magnetic recording medium for heat-assisted magnetic storage apparatus

Inventors: Takayuki Fukushima (Chiba, JP); Chen Xu (Chiba, JP); Lei Zhang (Chiba, JP); Hisato Shibata (Chiba, JP); Takehiro Yamaguchi (Chiba, JP); Kazuya Niwa (Chiba, JP); Tomoo Shige (Chiba, JP); Hiroaki Nemoto (Chiba, JP); Yuji Umemoto (Chiba, JP); Hiroshi Koyanagi (Chiba, JP)
Assignee: SHOWA DENKO K.K.
G11B5/653G11B5/6088G11B5/66G11B2005/0021G11B2005/0024G11B2005/0029
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Quick Facts
Patent No.
US 11,024,334
App. No.
16/835,770
Granted
Jun 1, 2021
Kind
B2
Abstract

A magnetic recording medium includes a substrate, an underlayer, and a magnetic layer that are arranged in this order. The magnetic layer has a granular structure including magnetic grains having a L1 0 crystal structure, and grain boundary parts having a volume fraction in a range of 25 volume % to 50 volume %. The magnetic grains have a c-axis orientation with respect to the substrate. The grain boundary parts include a material having a lattice constant in a range of 0.30 nm to 0.36 nm, or in a range of 0.60 nm to 0.72 nm.

Claims (63)

1. A magnetic recording medium comprising:

a substrate;

an underlayer disposed above the substrate; and

a magnetic layer disposed above the underlayer,

wherein the magnetic layer has a granular structure including magnetic grains having a L1 0 crystal structure, and grain boundary parts having a volume fraction in a range of 25 volume % to 50 volume %,

wherein the magnetic grains have a c-axis orientation with respect to the substrate, and

wherein the grain boundary parts include a material having a lattice constant in a range of 0.30 nm to 0.36 nm, or in a range of 0.60 nm to 0.72 nm.

2. The magnetic recording medium as claimed in claim 1 , wherein

the material included in the grain boundary parts is a crystalline material that is perpendicularly oriented with respect to the substrate, and

the lattice constant is that of an axis perpendicularly oriented with respect to the substrate.

3. The magnetic recording medium as claimed in claim 2 , wherein the crystalline material is an ionic crystal selected from a group consisting of SnO 2 , OsO 2 , IrO 2 , VO 2 , MnO 2 , TiO 2 , RuO 2 , GeO 2 , NbO 2 , MgF 2 , NiF 2 , CoF 2 , FeF 2 , MnF 2 , ZnF 2 , PbTe, SnTe, KCl, KBr, KI, InSb, and NaI.

4. The magnetic recording medium as claimed in claim 3 , wherein the grain boundary parts further include C, BN, or B, and the ionic crystal has a volume fraction in a range of 10 volume % to 80 volume %.

5. The magnetic recording medium as claimed in claim 4 , wherein

the ionic crystals of SnO 2 , OsO 2 , IrO 2 , VO 2 , MnO 2 , TiO 2 , RuO 2 , GeO 2 , NbO 2 , MgF 2 , NiF 2 , CoF 2 , FeF 2 , MnF 2 , and ZnF 2 have a rutile structure in which a c-axis or a (110) axis is the axis perpendicularly oriented with respect to the substrate, and

an a-axis of the ionic crystals of PbTe, SnTe, KCl, KBr, KI, InSb, and NaI is the axis perpendicularly oriented with respect to the substrate.

6. The magnetic recording medium as claimed in claim 3 , wherein

the ionic crystals of SnO 2 , OsO 2 , IrO 2 , VO 2 , MnO 2 , TiO 2 , RuO 2 , GeO 2 , NbO 2 , MgF 2 , NiF 2 , CoF 2 , FeF 2 , MnF 2 , and ZnF 2 have a rutile structure in which a c-axis or a (110) axis is the axis perpendicularly oriented with respect to the substrate, and

an a-axis of the ionic crystals of PbTe, SnTe, KCl, KBr, KI, InSb, and NaI is the axis perpendicularly oriented with respect to the substrate.

7. The magnetic recording medium as claimed in claim 1 , wherein

the underlayer includes at least one compound selected from a group consisting of NaCl oxides, NaCl nitrides, and NaCl carbides,

the NaCl oxides include at least one of MgO, TiO, and NiO,

the NaCl nitrides include at least one of TiN, TaN, HfN, and NbN, and

the NaCl carbides include at least one of ZrC, HfC, TaC, NbC, and TiC.

8. The magnetic recording medium as claimed in claim 7 , wherein

the underlayer further includes a rutile oxide or a rutile fluoride, and

a c-axis or a (110) axis of the rutile oxide or the rutile fluoride is perpendicularly oriented with respect to the substrate.

9. The magnetic recording medium as claimed in claim 8 , wherein the rutile fluoride includes one of MgF 2 , NiF 2 , CoF 2 , FeF 2 , MnF 2 , ZnF 2 , and VF 2 .

10. The magnetic recording medium as claimed in claim 3 , comprising:

a plurality of laminated magnetic layers forming a magnetic recording layer,

wherein a first magnetic layer, among the plurality of laminated magnetic layers, is made of an Fe—Pt alloy, and

the magnetic layer is a second magnetic layer, among the plurality of laminated magnetic layers, formed on the first magnetic layer.

11. The magnetic recording medium as claimed in claim 10 , wherein the underlayer includes

a first underlayer, made of a Cr—Ti alloy, and formed on the substrate,

a second underlayer, made of a Co—Fe—Zr—B alloy, and formed on the first underlayer,

a third underlayer, made of Cr, and formed on the second underlayer, and

a fourth underlayer, made of MgO, and formed on the third underlayer,

wherein the first magnetic layer is formed on the fourth underlayer.

12. A magnetic storage apparatus comprising:

the magnetic recording medium according to claim 1 ; and

a magnetic head configured to write information to and read information from the magnetic recording medium.

13. A magnetic storage apparatus comprising:

a magnetic recording medium;

a magnetic head configured to write information to and read information from the magnetic recording medium; and

a casing configured to accommodate the magnetic recording medium and the magnetic head,

wherein the magnetic head includes a laser light generator configured to generate laser light, a waveguide configured to guide the laser light to a tip end of the magnetic head, and a near-field light generator configured to generate near-field light that heats the magnetic recording medium,

wherein the magnetic recording medium includes a substrate, an underlayer, and a magnetic layer that are arranged in this order,

wherein the magnetic layer has a granular structure including magnetic grains having a L1 0 crystal structure, and grain boundary parts having a volume fraction in a range of 25 volume % to 50 volume %,

wherein the magnetic grains have a c-axis orientation with respect to the substrate, and

wherein the grain boundary parts include a material having a lattice constant in a range of 0.30 nm to 0.36 nm, or in a range of 0.60 nm to 0.72 nm.

14. The magnetic storage apparatus as claimed in claim 13 , wherein, in the magnetic recording medium,

the material included in the grain boundary parts is a crystalline material that is perpendicularly oriented with respect to the substrate, and

the lattice constant is that of an axis perpendicularly oriented with respect to the substrate.

15. The magnetic storage apparatus as claimed in claim 14 , wherein the crystalline material is an ionic crystal selected from a group consisting of SnO 2 , OsO 2 , IrO 2 , VO 2 , MnO 2 , TiO 2 , RuO 2 , GeO 2 , NbO 2 , MgF 2 , NiF 2 , CoF 2 , FeF 2 , MnF 2 , ZnF 2 , PbTe, SnTe, KCl, KBr, KI, InSb, and NaI.

16. The magnetic storage apparatus as claimed in claim 15 , wherein the magnetic recording medium includes

a plurality of laminated magnetic layers forming a magnetic recording layer,

wherein a first magnetic layer, among the plurality of laminated magnetic layers, is made of an Fe—Pt alloy, and

the magnetic layer is a second magnetic layer, among the plurality of laminated magnetic layers, formed on the first magnetic layer.

17. The magnetic storage apparatus as claimed in claim 16 , wherein the underlayer of the magnetic recording medium includes

a first underlayer, made of a Cr—Ti alloy, and formed on the substrate,

a second underlayer, made of a Co—Fe—Zr—B alloy, and formed on the first underlayer,

a third underlayer, made of Cr, and formed on the second underlayer, and

a fourth underlayer, made of MgO, and formed on the third underlayer,

wherein the first magnetic layer is formed on the fourth underlayer.

Assignments (4)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 15, 2024
From: RESONAC CORPORATION
To: RESONAC HARD DISK CORPORATION
Reel/Frame 069167/0673 →
CHANGE OF ADDRESS Recorded Feb 14, 2024
From: RESONAC CORPORATION
To: RESONAC CORPORATION
Reel/Frame 066599/0037 →
CHANGE OF NAME Recorded Jun 23, 2023
From: SHOWA DENKO K.K.
To: RESONAC CORPORATION
Reel/Frame 064082/0513 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 31, 2020
From: FUKUSHIMA, TAKAYUKI; XU, CHEN; ZHANG, LEI; SHIBATA, HISATO; YAMAGUCHI, TAKEHIRO; NIWA, KAZUYA; SHIGE, TOMOO; NEMOTO, HIROAKI; UMEMOTO, YUJI; KOYANAGI, HIROSHI
To: SHOWA DENKO K.K.
Reel/Frame 052272/0486 →
Priority Claims (1)
JP JP2019-074315 · Apr 9, 2019 · national
Continuity (1)
Related Publication 20200327905A1 · Oct 15, 2020