Display device and method of manufacturing display device
A display device includes: a substrate; a first insulating layer disposed on the substrate and that includes an inorganic insulating material; an oxide semiconductor layer disposed on the first insulating layer; a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material; and a third insulating layer disposed on a gate electrode disposed on the second insulating layer and that includes an inorganic insulating material. The oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and a value in the channel region of the oxide semiconductor layer of HC according to equation (1) is less than 30%.
1. A display device, comprising:
a substrate;
a first insulating layer disposed on the substrate and that includes an inorganic insulating material;
an oxide semiconductor layer disposed on the first insulating layer;
a second insulating layer disposed on the oxide semiconductor layer and that includes an inorganic insulating material;
a gate electrode disposed on the second insulating layer; and
a third insulating layer disposed on the gate electrode and that includes an inorganic insulating material,
wherein the oxide semiconductor layer includes a first conductive region, a second conductive region, and a channel region located between the first conductive region and the second conductive region, and
a hydrogen concentration of the oxide semiconductor layer is within a range from about 5×10 20 atom/cm 3 to about 2×10 21 atom/cm 3 , and
a value in the channel region of the oxide semiconductor layer of HC according to Equation (1) is less than 30%:
HC [%]=(Max−Min)/Avg×100 Equation (1),
wherein Max represents a maximum hydrogen concentration value detected from a plurality of points within the channel region, Min represents a minimum hydrogen concentration value detected from a plurality of points within the channel region, and Avg represents an average hydrogen concentration value detected from a plurality of points within the channel region,
wherein the hydrogen concentration is measured in a valid region of the channel region that is separated from edges of the channel region by about 0.15% times a length of the channel region L and by about 0.15% times a width of the channel region.
2. The display device of claim 1 , wherein a hydrogen concentration of the channel region is within a range from about 1×10 21 atom/cm 3 to about 2×10 21 atom/cm 3 .
3. The display device of claim 1 , wherein the second insulating layer includes a silicon oxide layer.
4. The display device of claim 1 , wherein at least one of the first insulating layer or the third insulating layer includes a silicon oxide layer or a silicon nitride layer.
5. The display device of claim 1 , further comprising:
a metal layer interposed between the substrate and the first insulating layer.
6. The display device of claim 1 , wherein the oxide semiconductor layer contains fluorine, and a concentration of the fluorine of the oxide semiconductor layer is in a range from about 5×10 17 atom/cm 3 to about 5×10 18 atom cm 3 .
7. The display device of claim 5 , wherein the metal layer includes a bottom gate electrode.
8. A display device, comprising:
a substrate;
a first transistor and a second transistor each disposed on the substrate, wherein one of the first transistor or the second transistor includes:
an oxide semiconductor layer that includes a channel region,
a first conductive region, and
a second conductive region,
wherein the first conductive region and the second conductive region are located on two opposite sides of the channel region, respectively;
a first insulating layer interposed between the substrate and the oxide semiconductor layer,
a gate electrode that overlaps the channel region of the oxide semiconductor layer;
a second insulating layer interposed between the oxide semiconductor layer and the gate electrode; and
a third insulating layer disposed on the second insulating layer and that covers the gate electrode,
wherein a hydrogen concentration of the oxide semiconductor layer is within a range from about 5×10 20 atom/cm 3 to about 2×10 21 atom/cm 3 , and
a value in the channel region of the oxide semiconductor layer of HC according to Equation (1) is less than 30%:
HC [%](Max−Min)/Avg×100 Equation (1),
wherein Max represents a maximum hydrogen concentration value detected from a plurality of points within the channel region, Min represents a minimum hydrogen concentration value detected from a plurality of points within the channel region, and Avg represents an average hydrogen concentration value detected from a plurality of points within the channel region,
wherein the hydrogen concentration is measured in a valid region of the channel region that is separated from edges of the channel region by about 0.15% times a length of the channel region L and by about 0.15% times a width of the channel region.
9. The display device of claim 8 , wherein a hydrogen concentration of the channel region is within a range from about 1×10 21 atom/cm 3 to about 2×10 21 atom/cm 3 .
10. The display device of claim 8 , wherein
the second insulating layer includes a silicon oxide layer, and
at least one of the first insulating layer or the third insulating layer includes a silicon oxide layer or a silicon nitride layer.
11. The display device of claim 8 , flintier comprising
a bottom metal layer interposed between the substrate and the first insulating layer.
12. The display device of claim 11 , wherein the bottom metal layer has a same voltage level as that of the gate electrode.
13. The display device of claim 8 , wherein the other of the first transistor and the second transistor includes a silicon transistor.