Image sensor
An image sensor includes a pixel array including a plurality of unit pixels arranged along a plurality of rows and a plurality of columns. Each of the unit pixels includes a photoelectric conversion element generating and accumulating photocharges, a charge detection node receiving the photocharges accumulated in the photoelectric conversion element, a readout circuit converting the photocharges accumulated in and output from the charge detection node into an electrical pixel signal, the readout circuit outputting the electrical pixel signal, a capacitive element, and a switching element controlling connection between the charge detection node and the capacitive element. Each of the rows of the pixel array includes first pixels connected to a first conversion gain control line and second pixels connected to a second conversion gain control line.
1. An image sensor comprising:
a pixel array comprising 2×2 pixel arrays repeated along a row direction and a column direction, the 2×2 pixel arrays including a first 2×2 pixel array and a second 2×2 pixel array adjacent to the first 2×2 pixel array;
a plurality of first conversion gain control lines; and
a plurality of second conversion gain control lines,
wherein each of the first and second 2×2 pixel arrays include four unit pixels comprising:
a photoelectric conversion element configured to generate and accumulate photocharges;
a charge detection node configured to receive the photocharges that are accumulated in the photoelectric conversion element;
a readout circuit configured to convert the photocharges that are received by the charge detection node into an electrical signal, and to output the electrical signal;
a capacitive element; and
a switching element configured to control a connection between the charge detection node and the capacitive element, and
wherein a number of the unit pixels, among the first 2×2 pixel array, connected to a first line of the plurality of first conversion gain control lines is different from a number of the unit pixels, among the second 2×2 pixel array, connected to the first line of the plurality of first conversion gain control lines.
2. The image sensor of claim 1 , wherein a number of the unit pixels, among the first 2×2 pixel array, connected to a first line of the plurality of second conversion gain control lines is different from a number of the unit pixels, among the second 2×2 pixel array, connected to a second line of the plurality of second conversion gain control lines.
3. The image sensor of claim 1 , wherein each of the 2×2 pixel arrays includes a blue color filter, a first green color filter, a red color filter and a second green color filter, and
wherein the blue color filter, the first green color filter, the red color filter, and the second green color filter are arranged in a clockwise direction.
4. The image sensor of claim 3 , wherein a conversion gain of the unit pixels connected to the first line of the plurality of first conversion gain control lines is different from a conversion gain of the unit pixels connected to the first line of the plurality of second conversion gain control lines.
5. The image sensor of claim 3 , wherein a conversion gain of the unit pixels connected to the first line of the plurality of first conversion gain control lines is equal to a conversion gain of the unit pixels connected to the first line of the plurality of second conversion gain control lines.
6. The image sensor of claim 4 , wherein the capacitive element is connected between a ground and the charge detection node.
7. The image sensor of claim 4 , wherein the capacitive element is connected to a pixel power voltage.
8. The image sensor of claim 5 , wherein the capacitive element is connected between a ground and the charge detection node.
9. The image sensor of claim 5 , wherein the capacitive element is connected to a pixel power voltage.
10. An image sensor comprising:
a pixel array comprising 6×6 pixel arrays along a row direction and a column direction;
a plurality of first conversion gain control lines;
a plurality of second conversion gain control lines,
wherein the 6×6 pixel arrays include 36 unit pixels, each of the unit pixels comprising:
a photoelectric conversion element configured to generate and accumulate photocharges;
a charge detection node configured to receive the photocharges that are accumulated in the photoelectric conversion element;
a readout circuit configured to convert the photocharges that are received by the charge detection node into an electrical signal, and to output the electrical signal;
a capacitive element; and
a switching element configured to control a connection between the charge detection node and the capacitive element,
wherein a number of the unit pixels, among the 6×6 pixel arrays, connected to a first line of the plurality of first conversion gain control lines is different from a number of pixels, among the 6×6 pixel arrays, connected to a first line of the plurality of second conversion gain control lines.
11. The image sensor of claim 10 , wherein a number of the unit pixels, among the 6×6 pixel arrays, connected to a second line of the plurality of first conversion gain control lines of a second row is different from a number of the unit pixels, among the 6×6 pixel arrays, connected to a second line of the plurality of second conversion gain control lines of the second row.
12. The image sensor of claim 11 , wherein a conversion gain of the unit pixels connected to the plurality of first conversion gain control lines is different from a conversion gain of the unit pixels connected to the plurality of second conversion gain control lines.
13. The image sensor of claim 11 , wherein a conversion gain of the unit pixels connected to the plurality of first conversion gain control lines is equal to a conversion gain of the unit pixels connected to the plurality of second conversion gain control lines.
14. The image sensor of claim 12 , wherein the capacitive element is connected between a ground and the charge detection node.
15. The image sensor of claim 12 , wherein the capacitive element is connected to a pixel power voltage.
16. The image sensor of claim 13 , wherein the capacitive element is connected between a ground and the charge detection node.
17. The image sensor of claim 13 , wherein the capacitive element is connected to a pixel power voltage.