Method for transfer of semiconductor devices onto glass substrates
A method for transferring a plurality of die operatively associated with a transfer apparatus to a glass substrate to form a circuit component. The transfer occurs by positioning the glass substrate to face a first surface of a die carrier carrying multiple die. A reciprocating transfer member thrusts against a second surface of the die carrier to actuate the transfer member thereby causing a localized deflection of the die carrier in a direction of the surface of the glass substrate to position an initial die proximate to the glass substrate. The initial die transfers directly to a circuit trace on the glass substrate. At least one of the die carrier or the transfer member is then shifted such that the transfer member aligns with a subsequent die on the first surface of the die carrier. The acts of actuating, transferring, and shifting are repeated to effectuate a transfer of the multiple die onto the glass substrate.
1. A method for transferring micro-sized unpackaged semiconductor device die, operatively associated with a machine to form a circuit component, the method comprising steps of:
providing:
a glass substrate including an identifier mark thereon that is readable by the machine configured for transferring the micro-sized unpackaged semiconductor device die, the identifier mark corresponding to instruction information that indicates a predetermined place on the glass substrate according to a predetermined pattern,
a circuit trace formed on a surface of the glass substrate, the circuit trace being according to the predetermined pattern, and
a die carrier having a first surface carrying a plurality of the micro-sized unpackaged semiconductor device die;
reading the identifier mark to identify transfer locations by the machine, on the glass substrate, for transfer of multiple respective micro-sized unpackaged semiconductor device die of the plurality of micro-sized unpackaged semiconductor device die;
positioning the surface of the glass substrate to face the first surface of the die carrier;
actuating a reciprocating transfer member of the machine by an actuator needle of the machine to thrust against a second surface of the die carrier, opposite the first surface, at a position corresponding to a location of an initial micro-sized unpackaged semiconductor device die of the plurality of micro-sized unpackaged semiconductor device die on the first surface of the die carrier, the actuating causing a localized deflection of the die carrier in a direction of the surface of the glass substrate such that the initial micro-sized unpackaged semiconductor device die is transferred directly from the die carrier to the circuit trace on the glass substrate;
shifting at least one of the die carrier or the reciprocating transfer member such that the reciprocating transfer member aligns with a subsequent location of a subsequent micro-sized unpackaged semiconductor device die of the multiple micro-sized unpackaged semiconductor device die on the first surface of the die carrier; and
repeating the actuating of the reciprocating transfer member, and the shifting of the at least one of the die carrier or the reciprocating transfer member, with respect to subsequent locations and corresponding subsequent micro-sized unpackaged semiconductor device die, according to the predetermined pattern and at a predetermined transfer rate, to effectuate the transfer of the multiple respective micro-sized unpackaged semiconductor device die onto the glass substrate.
2. The method for transferring the micro-sized unpackaged semiconductor device die of claim 1 , wherein the glass substrate is curved.
3. The method for transferring the micro-sized unpackaged semiconductor device die of claim 1 , wherein the predetermined transfer rate ranges between 6 to 20 die per second.
4. The method for transferring the micro-sized unpackaged semiconductor device die of claim 1 , wherein the micro-sized unpackaged semiconductor device die have a height not greater than 200 microns.
5. The method for transferring the micro-sized unpackaged semiconductor device die of claim 1 , wherein the micro-sized unpackaged semiconductor device die have a height not greater than 50 microns.
6. The method for transferring the micro-sized unpackaged semiconductor device die of claim 1 , wherein a thickness of the circuit trace ranges from about 5 microns to about 20 microns.
7. The method for transferring the micro-sized unpackaged semiconductor device die of claim 1 , wherein the circuit trace includes a conductive material.