Organic light emitting diode display device and method of manufacturing organic light emitting diode display device
An organic light emitting diode display device includes a substrate, an active layer disposed on the substrate and including a metal oxide-based semiconductor, a gate electrode disposed on the active layer, an insulating layer disposed on the gate electrode, source and drain electrodes disposed on the insulating layer, a light emitting element on the source and drain electrodes, and a gate insulating layer between the active layer and the gate electrode. The gate insulating layer includes first and second gate insulating layers. The first gate insulating layer directly contacts the active layer and has a first amount of nitrogen. The second gate insulating layer is disposed on the first gate insulating layer and has a second amount of nitrogen that is different from the first amount of nitrogen.
1. An organic light emitting diode display device, comprising:
a substrate;
an active layer on the substrate and including a metal oxide-based semiconductor;
a gate electrode on the active layer; an insulating layer on the gate electrode;
a source electrode and a drain electrode each on the insulating layer;
a light emitting element on the source electrode and the drain electrode; and
a gate insulating layer between the active layer and the gate electrode, and including:
a first gate insulating layer directly contacting the active layer, and having a first amount of nitrogen; and
a second gate insulating layer on the first gate insulating layer and having a second amount of nitrogen that is different from the first amount of nitrogen,
wherein a thickness of the first gate insulating layer is less than a thickness of the second gate insulating layer, and
an amount of oxygen in the first gate insulating layer is different from an amount of oxygen in the second gate insulating layer.
2. The organic light emitting diode display device of claim 1 , wherein
the second amount of nitrogen included in the second gate insulating layer is greater than the first amount of nitrogen included in the first gate insulating layer, and
the second amount of nitrogen included in the second gate insulating layer is equal to greater than about 5*10 20 atoms/cm 3 .
3. The organic light emitting diode display device of claim 1 , wherein the gate insulating layer includes silicon oxide or metal oxide.
4. The organic light emitting diode display device of claim 3 , wherein the gate insulating layer includes a material which is SiO, AlO, GaO, TiO, TaO, MnO, ZnO, ZrO, HfO, or LaO.
5. The organic light emitting diode display device of claim 3 , wherein an amount of oxygen included in the second gate insulating layer is higher than an amount of oxygen included in the first gate insulating layer.
6. The organic light emitting diode display device of claim 1 , further comprising a buffer layer between the substrate and the active layer.
7. The organic light emitting diode display device of claim 6 , wherein an amount of nitrogen included in the buffer layer is higher than the first amount of nitrogen included in the first gate insulating layer and lower than the second amount of nitrogen included in the second gate insulating layer.