Display device having a compensation transistor with a second region having greater electrical resistance than a first region

1. A display device comprising:

scan lines to which scan signals are applied;

data lines to which data voltages are applied; and

pixels connected to the scan lines and the data lines,

wherein each of the pixels comprises a first transistor configured to control a driving current which flows from a first electrode to a second electrode according to a voltage applied to a gate electrode, a light-emitting element connected to the second electrode of the first transistor and configured to emit light according to the driving current, and a third transistor electrically connected between the gate electrode and the second electrode of the first transistor,

wherein the third transistor comprises an active layer comprising a first region connected to the second electrode of the first transistor, a second region connected to the gate electrode of the first transistor, and a channel region between the first region and the second region,

wherein electrical resistance of the second region is greater than electrical resistance of the first region,

wherein a concentration of impurity ions doped in the first region is different from a concentration of impurity ions doped in the second region,

wherein the concentration of the impurity ions doped in the first region is substantially uniform in the first region, and

wherein the concentration of the impurity ions doped in the second region is substantially uniform in the second region.

2. The display device of claim 1 , wherein:

the first region is in direct contact with a first electrode of the third transistor;

the second region is in direct contact with a second electrode of the third transistor; and

the first region and the second region are in direct contact with a channel region of the third transistor.

3. The display device of claim 1 , wherein impurity ions doped in the first region and impurity ions doped in the second region are the same impurity ions.

4. The display device of claim 1 , wherein both the first transistor and the third transistor are a p-type metal-oxide-semiconductor (PMOS) transistor.

5. The display device of claim 4 , wherein the PMOS transistor comprises polycrystalline silicon.

6. The display device of claim 1 , further comprising a second transistor electrically connected between any one data line of the data lines and the first electrode of the first transistor.

7. A display device comprising:

scan lines to which scan signals are applied;

data lines to which data voltages are applied; and

pixels connected to the scan lines and the data lines,

wherein each of the pixels comprises a first transistor configured to control a driving current which flows from a first electrode to a second electrode according to a voltage applied to a gate electrode, a light-emitting element connected to the second electrode of the first transistor and configured to emit light according to the driving current, and a third transistor electrically connected between the gate electrode and the second electrode of the first transistor,

wherein the third transistor comprises an active layer comprising a first region connected to the second electrode of the first transistor, a second region connected to the gate electrode of the first transistor, and a channel region between the first region and the second region, and

wherein electrical resistance of the second region is greater than electrical resistance of the first region,

wherein a concentration of impurity ions doped in the first region is greater than a concentration of impurity ions doped in the second region and the concentration of the impurity ions doped in the second region is greater than a concentration of impurity ions doped in the channel region.

8. A display device comprising:

scan lines to which scan signals are applied;

data lines to which data voltages are applied; and

pixels connected to the scan lines and the data lines,

wherein each of the pixels comprises a first transistor configured to control a driving current which flows from a first electrode to a second electrode according to a voltage applied to a gate electrode, a light-emitting element connected to the second electrode of the first transistor and configured to emit light according to the driving current, and a third transistor electrically connected between the gate electrode and the second electrode of the first transistor,

wherein the third transistor comprises an active layer comprising a first region connected to the second electrode of the first transistor, a second region connected to the gate electrode of the first transistor, and a channel region between the first region and the second region,

wherein electrical resistance of the second region is greater than electrical resistance of the first region, and

wherein a concentration of impurity ions doped in the first region is about twice a concentration of impurity ions doped in the second region or more.

9. The display device of claim 8 , wherein:

the concentration of the impurity ions doped in the first region ranges from about 1E15/cm 3 to about 4E15/cm 3 , and

the concentration of the impurity ions doped in the second region ranges from about 5E14/cm 3 to about 2E15/cm 3 .