Magnetoresistance effect element and magnetic memory
An object of the invention is to provide a magnetoresistance effect element which includes a reference layer having three or more magnetic layers and which improves a thermal stability factor Δ by decreasing a write error rate using an element structure that enables a wide margin to be secured between a current at which magnetization of the reference layer is reversed and a writing current Ic of a recording layer and by reducing an effect of a stray magnetic field from the reference layer. The magnetoresistance effect element includes: a first recording layer (A 1 ); a first non-magnetic layer ( 11 ); and a first reference layer (B 1 ), wherein the first reference layer (B 1 ) including n-number of a plurality of magnetic layers ( 21, 22, . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31, 32, . . . 3 (n−1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3.
1. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other, and
wherein each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) contains Ru or Ir, a film thickness of the Ru is 0.9±0.2 nm or 0.4±0.15 nm, and a film thickness of the Ir is 0.5±0.15 nm or 1.35±0.1 nm.
2. The magnetoresistance effect element according to claim 1 , wherein a shift magnetic field Hs with respect to the first recording layer (A 1 ) due to a stray magnetic field from the first reference layer (B 1 ) is smaller than a coercive force Hc of the first recording layer (A 1 ).
3. The magnetoresistance effect element according to claim 2 , wherein the shift magnetic field Hs is equal to or smaller than 0.2 of the coercive force Hc.
4. The magnetoresistance effect element according to claim 1 , wherein each of the plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) contains Co.
5. The magnetoresistance effect element according to claim 4 , wherein each of the plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) includes a Co layer ( 213 ) at an interface with the non-magnetic insertion layer that is adjacent to each magnetic layer.
6. The magnetoresistance effect element according to claim 1 , wherein the first magnetic layer ( 21 ) includes an interface magnetic layer ( 211 ) which contains Co or Fe and which is provided adjacent to a first non-magnetic layer ( 11 ), a non-magnetic coupling layer ( 41 ) which is provided adjacent to the interface magnetic layer ( 211 ) on an opposite side to the first non-magnetic layer ( 11 ), and a Co magnetic layer ( 212 ) which contains Co and which is provided adjacent to the non-magnetic coupling layer ( 41 ) on an opposite side to the interface magnetic layer ( 211 ).
7. The magnetoresistance effect element according claim 1 , wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ).
8. The magnetoresistance effect element according to claim 7 , wherein
the number of the plurality of magnetic layers is n=4, and
a sum of magnetization M 1 of the first magnetic layer ( 21 ) and magnetization M 3 of the third magnetic layer ( 23 ) is equal to or smaller than a sum of magnetization M 2 of the second magnetic layer ( 22 ) and magnetization M 4 of the fourth magnetic layer ( 24 ).
9. The magnetoresistance effect element according to claim 7 , wherein magnetization M 1 of the first magnetic layer ( 21 ) is smaller than magnetization M 2 of the second magnetic layer ( 22 ).
10. The magnetoresistance effect element according to claim 7 , wherein
the number of the plurality of magnetic layers is n=4, and
a sum of a film thickness t 1 of the first magnetic layer ( 21 ) and a film thickness t 3 of the third magnetic layer ( 23 ) is equal to or smaller than a sum of a film thickness t 2 of the second magnetic layer ( 22 ) and a film thickness t 4 of the fourth magnetic layer ( 24 ).
11. The magnetoresistance effect element according to claim 7 , wherein a film thickness t 1 of the first magnetic layer ( 21 ) is smaller than a film thickness t 2 of the second magnetic layer ( 22 ).
12. The magnetoresistance effect element according to claim 10 , wherein a film thickness t 3 of the third magnetic layer ( 23 ) is larger than a film thickness t 4 of the fourth magnetic layer ( 24 ).
13. The magnetoresistance effect element according to claim 10 , wherein a film thickness t 3 of the third magnetic layer ( 23 ) is smaller than a film thickness t 4 of the fourth magnetic layer ( 24 ).
14. The magnetoresistance effect element according to claim 7 , wherein
the number of the plurality of magnetic layers is n=4, and
an antiferromagnetic coupling force J 12 between the first magnetic layer ( 21 ) and the second magnetic layer ( 22 ) is larger than an antiferromagnetic coupling force J 23 between the second magnetic layer ( 22 ) and the third magnetic layer ( 23 ).
15. The magnetoresistance effect element according to claim 14 , wherein an antiferromagnetic coupling force J 34 between the third magnetic layer ( 23 ) and the fourth magnetic layer ( 24 ) is larger than an antiferromagnetic coupling force J 23 between the second magnetic layer ( 22 ) and the third magnetic layer ( 23 ).
16. The magnetoresistance effect element according to claim 7 , wherein
the number of the plurality of magnetic layers is n=4,
the first non-magnetic insertion layer ( 31 ) and the third non-magnetic insertion layer ( 33 ) are Ru with a film thickness of 0.4±0.15 nm, and
the second non-magnetic insertion layer ( 32 ) is Ru with a film thickness of 0.9±0.2 nm.
17. The magnetoresistance effect element according to claim 7 , wherein
the number of the plurality of magnetic layers is n=4,
the first non-magnetic insertion layer ( 31 ) and the third non-magnetic insertion layer ( 33 ) are Ir with a film thickness of 0.5±0.15 nm, and
the second non-magnetic insertion layer ( 32 ) is Ru with a film thickness of 0.9±0.2 nm.
18. The magnetoresistance effect element according to claim 1 , wherein
the number of the plurality of magnetic layers is n=3,
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 ); and
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 ), and
magnetization M 2 of the second magnetic layer ( 22 ) is larger than a sum of magnetization M 1 of the first magnetic layer ( 21 ) and magnetization M 3 of the third magnetic layer ( 23 ).
19. The magnetoresistance effect element according to claim 1 , wherein
the number of the plurality of magnetic layers is n=3,
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 ); and
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 ), and
a film thickness t 2 of the second magnetic layer ( 22 ) is larger than a sum of a film thickness t 1 of the first magnetic layer ( 21 ) and a film thickness t 3 of the third magnetic layer ( 23 ).
20. The magnetoresistance effect element according to claim 1 , further comprising:
a cap layer (C 1 ) provided adjacent to the first recording layer (A 1 ) on an opposite side to the non-magnetic layer ( 11 );
an upper electrode layer (E 2 ) provided adjacent to the cap layer (C 1 ) on an opposite side to the first recording layer (A 1 );
a ground layer (S 1 ) provided adjacent to the first reference layer (B 1 ) on an opposite side to the non-magnetic layer ( 11 ); and
a lower electrode layer (E 1 ) provided adjacent to the ground layer (S 1 ) on an opposite side to the first reference layer (B 1 ).
21. The magnetoresistance effect element according to claim 1 , further comprising:
a cap layer (C 1 ) provided adjacent to the first reference layer (B 1 ) on an opposite side to the non-magnetic layer ( 11 );
an upper electrode layer (E 2 ) provided adjacent to the cap layer (C 1 ) on an opposite side to the reference layer (B 1 );
a ground layer (S 1 ) provided adjacent to the first recording layer (A 1 ) on an opposite side to the non-magnetic layer ( 11 ); and
a lower electrode layer (E 1 ) provided adjacent to the ground layer (S 1 ) on an opposite side to the first recording layer (A 1 ).
22. The magnetoresistance effect element according to claim 1 , further comprising:
a second non-magnetic layer ( 12 ) provided adjacent to the first recording layer (A 1 ) on an opposite side to the first non-magnetic layer ( 11 ); and
a second reference layer (B 2 ) provided adjacent to the second non-magnetic layer ( 12 ) on an opposite side to the first recording layer (A 1 ), wherein
the second reference layer (B 2 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the second reference layer (B 2 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other.
23. The magnetoresistance effect element according to claim 7 , wherein the number of the plurality of magnetic layers is n=4, and
a sum of a product of magnetization M 1 and a film thickness t 1 of the first magnetic layer ( 21 ) and a product of magnetization M 3 and a film thickness t 3 of the third magnetic layer ( 23 ) is equal to or smaller than a sum of a product of magnetization M 2 and a film thickness t 2 of the second magnetic layer ( 22 ) and a product of magnetization M 4 and a film thickness t 4 of the fourth magnetic layer ( 24 ).
24. The magnetoresistance effect element according claim 1 , wherein
the number of the plurality of magnetic layers is n=3,
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 ), and
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 ), and
a product of magnetization M 2 and a film thickness t 2 of the second magnetic layer ( 22 ) is larger than a sum of a product of magnetization M 1 and a film thickness t 1 of the first magnetic layer ( 21 ) and a sum of a product of magnetization M 3 and a film thickness t 3 of the third magnetic layer ( 23 ).
25. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein a shift magnetic field Hs with respect to the first recording layer (A 1 ) due to a stray magnetic field from the first reference layer (B 1 ) is smaller than a coercive force Hc of the first recording layer (A 1 ).
26. The magnetoresistance effect element according to claim 25 , wherein the shift magnetic field Hs is equal to or smaller than 0.2 of the coercive force Hc.
27. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other, and
wherein the first magnetic layer ( 21 ) includes an interface magnetic layer ( 211 ) which contains Co or Fe and which is provided adjacent to a first non-magnetic layer ( 11 ), a non-magnetic coupling layer ( 41 ) which is provided adjacent to the interface magnetic layer ( 211 ) on an opposite side to the first non-magnetic layer ( 11 ), and a Co magnetic layer ( 212 ) which contains Co and which is provided adjacent to the non-magnetic coupling layer ( 41 ) on an opposite side to the interface magnetic layer ( 211 ).
28. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein
the number of the plurality of magnetic layers is n=4, and
a sum of magnetization M 1 of the first magnetic layer ( 21 ) and magnetization M 3 of the third magnetic layer ( 23 ) is equal to or smaller than a sum of magnetization M 2 of the second magnetic layer ( 22 ) and magnetization M 4 of the fourth magnetic layer ( 24 ).
29. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein magnetization M 1 of the first magnetic layer ( 21 ) is smaller than magnetization M 2 of the second magnetic layer ( 22 ).
30. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein
the number of the plurality of magnetic layers is n=4, and
a sum of a film thickness t 1 of the first magnetic layer ( 21 ) and a film thickness t 3 of the third magnetic layer ( 23 ) is equal to or smaller than a sum of a film thickness t 2 of the second magnetic layer ( 22 ) and a film thickness t 4 of the fourth magnetic layer ( 24 ).
31. The magnetoresistance effect element according to claim 30 , wherein a film thickness t 3 of the third magnetic layer ( 23 ) is larger than a film thickness t 4 of the fourth magnetic layer ( 24 ).
32. The magnetoresistance effect element according to claim 30 , wherein a film thickness t 3 of the third magnetic layer ( 23 ) is smaller than a film thickness t 4 of the fourth magnetic layer ( 24 ).
33. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein a film thickness t 1 of the first magnetic layer ( 21 ) is smaller than a film thickness t 2 of the second magnetic layer ( 22 ).
34. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein
the number of the plurality of magnetic layers is n=4, and
an antiferromagnetic coupling force J 12 between the first magnetic layer ( 21 ) and the second magnetic layer ( 22 ) is larger than an antiferromagnetic coupling force J 23 between the second magnetic layer ( 22 ) and the third magnetic layer ( 23 ).
35. The magnetoresistance effect element according to claim 34 , wherein an antiferromagnetic coupling force J 34 between the third magnetic layer ( 23 ) and the fourth magnetic layer ( 24 ) is larger than an antiferromagnetic coupling force J 23 between the second magnetic layer ( 22 ) and the third magnetic layer ( 23 ).
36. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein
the number of the plurality of magnetic layers is n=4,
the first non-magnetic insertion layer ( 31 ) and the third non-magnetic insertion layer ( 33 ) are Ru with a film thickness of 0.4±0.15 nm, and
the second non-magnetic insertion layer ( 32 ) is Ru with a film thickness of 0.9±0.2 nm.
37. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein
the number of the plurality of magnetic layers is n=4,
the first non-magnetic insertion layer ( 31 ) and the third non-magnetic insertion layer ( 33 ) are Ir with a film thickness of 0.5±0.15 nm, and
the second non-magnetic insertion layer ( 32 ) is Ru with a film thickness of 0.9±0.2 nm.
38. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n=3,
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 ); and
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 ), and
magnetization M 2 of the second magnetic layer ( 22 ) is larger than a sum of magnetization M 1 of the first magnetic layer ( 21 ) and magnetization M 3 of the third magnetic layer ( 23 ).
39. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n=3,
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 ); and
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 ), and
a film thickness t 2 of the second magnetic layer ( 22 ) is larger than a sum of a film thickness t 1 of the first magnetic layer ( 21 ) and a film thickness t 3 of the third magnetic layer ( 23 ).
40. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
the magnetoresistance effect element further comprising:
a cap layer (C 1 ) provided adjacent to the first recording layer (A 1 ) on an opposite side to the non-magnetic layer ( 11 );
an upper electrode layer (E 2 ) provided adjacent to the cap layer (C 1 ) on an opposite side to the first recording layer (A 1 );
a ground layer (S 1 ) provided adjacent to the first reference layer (B 1 ) on an opposite side to the non-magnetic layer ( 11 ); and
a lower electrode layer (E 1 ) provided adjacent to the ground layer (S 1 ) on an opposite side to the first reference layer (B 1 ).
41. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
the magnetoresistance effect element further comprising:
a cap layer (C 1 ) provided adjacent to the first reference layer (B 1 ) on an opposite side to the non-magnetic layer ( 11 );
an upper electrode layer (E 2 ) provided adjacent to the cap layer (C 1 ) on an opposite side to the reference layer (B 1 );
a ground layer (S 1 ) provided adjacent to the first recording layer (A 1 ) on an opposite side to the non-magnetic layer ( 11 ); and
a lower electrode layer (E 1 ) provided adjacent to the ground layer (S 1 ) on an opposite side to the first recording layer (A 1 ).
42. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
the magnetoresistance effect element further comprising:
a second non-magnetic layer ( 12 ) provided adjacent to the first recording layer (A 1 ) on an opposite side to the first non-magnetic layer ( 11 ); and
a second reference layer (B 2 ) provided adjacent to the second non-magnetic layer ( 12 ) on an opposite side to the first recording layer (A 1 ), wherein
the second reference layer (B 2 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the second reference layer (B 2 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other.
43. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction,
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) contains Ru or Ir,
a film thickness of the Ru is 0.9±0.2 nm or 0.4±0.15 nm, and
a film thickness of the Ir is 0.5±0.15 nm or 1.35±0.1 nm.
44. The magnetoresistance effect element according to claim 43 , wherein the number of the plurality of magnetic layers is n≥4.
45. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other,
wherein
the number of the plurality of magnetic layers is n≥4, and
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 );
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 );
a third non-magnetic insertion layer ( 33 ) provided adjacent to the third magnetic layer ( 23 ) on an opposite side to the second non-magnetic insertion layer ( 32 ); and
a fourth magnetic layer ( 24 ) provided adjacent to the third non-magnetic insertion layer ( 33 ) on an opposite side to the third magnetic layer ( 23 ), and
wherein the number of the plurality of magnetic layers is n=4, and
a sum of a product of magnetization M 1 and a film thickness t 1 of the first magnetic layer ( 21 ) and a product of magnetization M 3 and a film thickness t 3 of the third magnetic layer ( 23 ) is equal to or smaller than a sum of a product of magnetization M 2 and a film thickness t 2 of the second magnetic layer ( 22 ) and a product of magnetization M 4 and a film thickness t 4 of the fourth magnetic layer ( 24 ).
46. A magnetoresistance effect element, comprising:
a first recording layer (A 1 );
a first non-magnetic layer ( 11 ) provided adjacent to the first recording layer (A 1 ); and
a first reference layer (B 1 ) provided adjacent to the first non-magnetic layer ( 11 ) on an opposite side to the first recording layer (A 1 ), wherein
the first reference layer (B 1 ) includes n-number of a plurality of magnetic layers ( 21 , 22 , . . . , 2 n ) and (n−1)−number of a plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) adjacently sandwiched by each of the plurality of magnetic layers, where n≥3,
a first magnetic layer ( 21 ) among the plurality of magnetic layers is provided adjacent to the first non-magnetic layer ( 11 ),
an orientation of magnetization of the first reference layer (B 1 ) is fixed in a film surface vertical direction, and
each of the plurality of non-magnetic insertion layers ( 31 , 32 , . . . , 3 ( n −1)) antiferromagnetically couples two adjacent magnetic layers to each other, and
wherein
the number of the plurality of magnetic layers is n=3,
the plurality of magnetic layers and the plurality of non-magnetic insertion layers have a structure that includes:
the first magnetic layer ( 21 );
a first non-magnetic insertion layer ( 31 ) provided adjacent to the first magnetic layer ( 21 ) on an opposite side to the first non-magnetic layer ( 11 );
a second magnetic layer ( 22 ) provided adjacent to the first non-magnetic insertion layer ( 31 ) on an opposite side to the first magnetic layer ( 21 );
a second non-magnetic insertion layer ( 32 ) provided adjacent to the second magnetic layer ( 22 ) on an opposite side to the first non-magnetic insertion layer ( 31 ), and
a third magnetic layer ( 23 ) provided adjacent to the second non-magnetic insertion layer ( 32 ) on an opposite side to the second magnetic layer ( 22 ), and
a product of magnetization M 2 and a film thickness t 2 of the second magnetic layer ( 22 ) is larger than a sum of a product of magnetization M 1 and a film thickness t 1 of the first magnetic layer ( 21 ) and a sum of a product of magnetization M 3 and a film thickness t 3 of the third magnetic layer ( 23 ).
47. A magnetic memory comprising the magnetoresistance effect element according to claim 1 .
48. A magnetic memory comprising the magnetoresistance effect element according to claim 25 .
49. A magnetic memory comprising the magnetoresistance effect element according to claim 27 .
50. A magnetic memory comprising the magnetoresistance effect element according to claim 28 .
51. A magnetic memory comprising the magnetoresistance effect element according to claim 29 .
52. A magnetic memory comprising the magnetoresistance effect element according to claim 30 .
53. A magnetic memory comprising the magnetoresistance effect element according to claim 33 .
54. A magnetic memory comprising the magnetoresistance effect element according to claim 34 .
55. A magnetic memory comprising the magnetoresistance effect element according to claim 36 .
56. A magnetic memory comprising the magnetoresistance effect element according to claim 37 .
57. A magnetic memory comprising the magnetoresistance effect element according to claim 38 .
58. A magnetic memory comprising the magnetoresistance effect element according to claim 39 .
59. A magnetic memory comprising the magnetoresistance effect element according to claim 40 .
60. A magnetic memory comprising the magnetoresistance effect element according to claim 41 .
61. A magnetic memory comprising the magnetoresistance effect element according to claim 42 .
62. A magnetic memory comprising the magnetoresistance effect element according to claim 43 .
63. A magnetic memory comprising the magnetoresistance effect element according to claim 45 .
64. A magnetic memory comprising the magnetoresistance effect element according to claim 46 .