Multi-wafer based light absorption apparatus and applications thereof
Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.
1. A semiconductor structure, comprising:
a first wafer;
an aluminum-germanium (Al—Ge) eutectic alloy layer over the first wafer; and
a second wafer bonded to the first wafer via the Al—Ge eutectic alloy layer;
wherein the Al—Ge eutectic alloy layer is formed based on an Al—Ge mixture that has an eutectic temperature ranging from 350 to 400 degrees Celsius,
wherein the Al—Ge mixture is doped by a dopant including boron, tin, copper, gold, a group-V element, or fluorine.
2. The structure of claim 1 , wherein the Al—Ge eutectic alloy layer is formed based on a first metal layer attached to the first wafer and a second metal layer attached to the second wafer during a pre-bonding process at said eutectic temperature, and wherein the first and second metal layers include germanium (Ge) and aluminum (Al).
3. The structure of claim 1 , wherein the Al—Ge eutectic alloy layer is formed to include a cave structure.
4. The structure of claim 1 , wherein a suppression-type local Ge or Al layer is formed in the cave structure.
5. The structure of claim 1 , further comprising a first barrier layer between the first wafer and the Al—Ge eutectic alloy layer.
6. The structure of claim 5 , further comprising a second barrier layer between the second wafer and the Al—Ge eutectic alloy layer.
7. The structure of claim 1 , wherein the Al—Ge eutectic alloy layer includes a first metal layer including a modified Ge layer and a modified Al layer.
8. The structure of claim 7 , wherein the first metal layer includes multiple modified Ge layers and multiple modified Al layers stacked in an interleaved manner.
9. The structure of claim 1 , wherein the Al—Ge eutectic alloy layer includes a first metal layer and a second metal layer.
10. The structure of claim 9 , wherein the second metal layer includes a modified Ge layer, and wherein the first metal layer includes a modified Al layer.
11. The structure of claim 9 , wherein the second metal layer includes multiple modified Ge layers and multiple modified Al layers stacked in an interleaved manner.
12. The structure of claim 1 , wherein the eutectic temperature is lower than a tolerance temperature of a back-end-of-line (BEOL) metal line.
13. The structure of claim 12 , wherein the tolerance temperature of the BEOL metal line is higher than 420 degrees Celsius.
14. A semiconductor structure, comprising:
a first wafer;
an eutectic alloy layer over the first wafer; and
a second wafer over the eutectic alloy layer;
wherein the eutectic alloy layer is formed from an eutectic metal mixture that:
includes germanium (Ge) and aluminum (Al),
is doped by a dopant including one or more of: copper, gold, fluorine, or a group-V element, and
has an eutectic temperature ranging from 350 to 400 degrees Celsius.
15. The structure of claim 14 , wherein the eutectic metal mixture further includes a dopant-modified local area, and wherein the eutectic alloy layer includes a cave structure that is formed near the dopant-modified local area.
16. A semiconductor structure, comprising:
a first wafer;
an eutectic alloy layer over the first wafer, the eutectic alloy layer including a material system
a second wafer bonded to the first wafer via the eutectic alloy layer; and
a cave structure formed in the eutectic alloy layer and including a material that is different, doped differently, and/or unreacted from the material system of the eutectic alloy layer.
17. The semiconductor structure of claim 16 , wherein the material of the cave structure includes doped Ge or doped Al.
18. The semiconductor structure of claim 17 , wherein the material system of the eutectic alloy layer includes Al—Ge alloy.
19. The semiconductor structure of claim 17 , wherein the doped Ge or doped Al is doped by a dopant including one or more of: a group-III element, a group-IV element, copper, gold, fluorine or a group-V element.